| Perpendicular magnetic anisotropy in Heusler alloy films and their magnetoresistive junctions A Hirohata, W Frost, M Samiepour, J Kim Materials 11 (1), 105, 2018 | 46 | 2018 |
| Van der Waals layer transfer of 2D materials for monolithic 3D electronic system integration: review and outlook J Kim, X Ju, KW Ang, D Chi ACS nano 17 (3), 1831-1844, 2023 | 35 | 2023 |
| Thickness-dependent magnetic properties of oxygen-deficient EuO M Barbagallo, T Stollenwerk, J Kroha, NJ Steinke, NDM Hine, JFK Cooper, ... Physical Review B 84 (7), 075219, 2011 | 28 | 2011 |
| Large exchange bias induced by polycrystalline Mn3Ga antiferromagnetic films with controlled layer thickness H Wu, I Sudoh, R Xu, W Si, CAF Vaz, J Kim, G Vallejo-Fernandez, ... Journal of Physics D: Applied Physics 51 (21), 215003, 2018 | 25 | 2018 |
| Large Dzyaloshinskii-Moriya interaction and room-temperature nanoscale skyrmions in CoFeB/MgO heterostructures R Chen, X Wang, H Cheng, KJ Lee, D Xiong, JY Kim, S Li, H Yang, ... Cell Reports Physical Science 2 (11), 2021 | 24 | 2021 |
| Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film T Ogasawara, J Kim, Y Ando, A Hirohata Journal of Magnetism and Magnetic Materials 473, 7-11, 2019 | 20 | 2019 |
| Interfacial structure and transport properties of Fe/GaAs (001) LR Fleet, H Kobayashi, Y Ohno, JY Kim, CHW Barnes, A Hirohata Journal of Applied Physics 109 (7), 2011 | 20 | 2011 |
| Enhancement of spin Hall conductivity in W–Ta alloy JY Kim, DS Han, M Vafaee, S Jaiswal, K Lee, G Jakob, M Kläui Applied Physics Letters 117 (14), 2020 | 19 | 2020 |
| Schottky barrier height in Fe/GaAs films LR Fleet, K Yoshida, H Kobayashi, Y Ohno, H Kurebayashi, JY Kim, ... IEEE transactions on magnetics 46 (6), 1737-1740, 2010 | 18 | 2010 |
| Magneto-optical detection of spin accumulation under the influence of mechanical rotation A Hirohata, Y Baba, BA Murphy, B Ng, Y Yao, K Nagao, J Kim Scientific reports 8 (1), 1974, 2018 | 12 | 2018 |
| Growth and characterisation of ferromagnetic and antiferromagnetic Fe2+ xVyAl Heusler alloy films T Huminiuc, O Whear, T Takahashi, J Kim, A Vick, G Vallejo-Fernandez, ... Journal of Physics D: Applied Physics 51 (32), 325003, 2018 | 11 | 2018 |
| Tuning Spin‐Orbit Torques Across the Phase Transition in VO2/NiFe Heterostructure J Kim, J Cramer, K Lee, DS Han, D Go, P Salev, PN Lapa, NM Vargas, ... Advanced functional materials 32 (17), 2111555, 2022 | 9 | 2022 |
| Non-destructive imaging for quality assurance of magnetoresistive random-access memory junctions E Jackson, Y Wu, W Frost, JY Kim, M Samiepour, K Elphick, M Sun, ... Journal of Physics D: Applied Physics 53 (1), 014004, 2019 | 8 | 2019 |
| Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN (0001) JY Kim, A Ionescu, R Mansell, I Farrer, F Oehler, CJ Kinane, JFK Cooper, ... Journal of Applied Physics 121 (4), 2017 | 8 | 2017 |
| Structure and magnetic properties of an epitaxial Fe (110)/MgO (111)/GaN (0001) heterostructure N Khalid, JY Kim, A Ionescu, T Hussain, F Oehler, T Zhu, RA Oliver, ... Journal of Applied Physics 123 (10), 2018 | 4 | 2018 |
| Optically induced and detected spin current A Hirohata, JY Kim Spin Current, 49-64, 2012 | 4 | 2012 |
| Sublimation-based wafer-scale monolayer WS 2 formation via self-limited thinning of few-layer WS 2 M Chen, J Chai, J Wu, H Zheng, WY Wu, J Lourembam, M Lin, JY Kim, ... Nanoscale Horizons 9 (1), 132-142, 2024 | 3 | 2024 |
| Strong (110) Texturing and Heteroepitaxial Growth of Thin Mo Films on MoS2 Monolayer J Kim, M Chen, WD Wang, PC Lim, J Kim, J Chai, M Zhang, SL Teo, M Lin, ... ACS Applied Electronic Materials 4 (10), 5026-5033, 2022 | 2 | 2022 |
| Development of an optically gated spin-polarized transistor JY Kim, M Samiepour, E Jackson, J Ryu, D Iizasa, T Saito, M Kohda, ... Physical Review B 106 (13), 134404, 2022 | 1 | 2022 |
| Revealing the higher-order spin nature of the Hall effect in non-collinear antiferromagnet A Rajan, TG Saunderson, FR Lux, RY Díaz, HM Abdullah, A Bose, ... arXiv preprint arXiv:2304.10747, 2023 | | 2023 |
Atsufumi HirohataUniversity of York在 york.ac.uk 的电子邮件经过验证
