| Study on the resistance distribution at the contact between molybdenum disulfide and metals Y Guo, Y Han, J Li, A Xiang, X Wei, S Gao, Q Chen ACS nano 8 (8), 7771-7779, 2014 | 111 | 2014 |
| Elevated-metal–metal-oxide thin-film transistor: Technology and characteristics L Lu, J Li, Z Feng, HS Kwok, M Wong IEEE Electron Device Letters 37 (6), 728-730, 2016 | 57 | 2016 |
| High-performance and reliable elevated-metal metal-oxide thin-film transistor for high-resolution displays L Lu, J Li, HS Kwok, M Wong 2016 IEEE International Electron Devices Meeting (IEDM), 32.2. 1-32.2. 4, 2016 | 48 | 2016 |
| A comparative study on fluorination and oxidation of indium–gallium–zinc oxide thin-film transistors L Lu, Z Xia, J Li, Z Feng, S Wang, HS Kwok, M Wong IEEE Electron Device Letters 39 (2), 196-199, 2017 | 38 | 2017 |
| Fluorination-enabled monolithic integration of enhancement-and depletion-mode indium-gallium-zinc oxide TFTs Z Feng, L Lu, S Wang, J Li, Z Xia, HS Kwok, M Wong IEEE Electron Device Letters 39 (5), 692-695, 2018 | 29 | 2018 |
| An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors J Li, L Lu, Z Feng, HS Kwok, M Wong Applied Physics Letters 110 (14), 2017 | 28 | 2017 |
| A comparative study on the effects of annealing on the characteristics of zinc oxide thin-film transistors with gate-stacks of different gas-permeability L Lu, J Li, M Wong IEEE electron device letters 35 (8), 841-843, 2014 | 27 | 2014 |
| Characteristics of elevated-metal metal-oxide thin-film transistors based on indium-tin-zinc oxide Z Xia, L Lu, J Li, Z Feng, S Deng, S Wang, HS Kwok, M Wong IEEE Electron Device Letters 38 (7), 894-897, 2017 | 23 | 2017 |
| Resilience of fluorinated indium-gallium-zinc oxide thin-film transistor against hydrogen-induced degradation S Wang, R Shi, J Li, L Lu, Z Xia, HS Kwok, M Wong IEEE Electron Device Letters 41 (5), 729-732, 2020 | 21 | 2020 |
| A bottom-gate metal–oxide thin-film transistor with self-aligned source/drain regions Z Xia, L Lu, J Li, HS Kwok, M Wong IEEE Transactions on Electron Devices 65 (7), 2820-2826, 2018 | 21 | 2018 |
| A physical model for metal–oxide thin-film transistor under gate-bias and illumination stress J Li, L Lu, R Chen, HS Kwok, M Wong IEEE Transactions on Electron Devices 65 (1), 142-149, 2017 | 17 | 2017 |
| P‐15: The Use of Fluorination to Enhance the Performance and the Reliability of Elevated‐Metal Metal‐Oxide Thin‐Film Transistors Z Xia, L Lu, J Li, HS Kwok, M Wong SID Symposium Digest of Technical Papers 49 (1), 1235-1238, 2018 | 15* | 2018 |
| Thermally induced variation of the turn-ON voltage of an indium–gallium–zinc oxide thin-film transistor L Lu, J Li, M Wong IEEE transactions on electron devices 62 (11), 3703-3708, 2015 | 15 | 2015 |
| Self-aligned elevated-metal metal-oxide thin-film transistors for displays and flexible electronics Z Xia, L Lu, J Li, HS Kwok, M Wong 2019 IEEE International Electron Devices Meeting (IEDM), 8.4. 1-8.4. 4, 2019 | 12 | 2019 |
| Fluorinated indium‐gallium‐zinc oxide thin‐film transistor with reduced vulnerability to hydrogen‐induced degradation S Wang, J Li, R Shi, Z Xia, L Lu, HS Kwok, M Wong Journal of the Society for Information Display 28 (6), 520-527, 2020 | 10 | 2020 |
| Three-mask elevated-metal metal-oxide thin-film transistor with self-aligned definition of the active island J Li, L Lu, Z Xia, HS Kwok, M Wong IEEE Electron Device Letters 39 (1), 35-38, 2017 | 10 | 2017 |
| Vertical thin-film transistor with multiple-junction channel L Lu, ZH Xia, JP Li, M Wong, HS Kwok US Patent App. 15/581,322, 2018 | 5 | 2018 |
| A timing model for the optimal design of a prototype active-matrix display Z Xia, X Liu, R Shi, J Li, L Lu, HS Kwok, M Wong IEEE Transactions on Electron Devices 67 (8), 3167-3174, 2020 | 3 | 2020 |
| P‐11: Carrier Concentration Reduction by Fluorine Doping in P‐Type SnO Thin‐Film Transistors S Wang, L Lu, J Li, Z Xia, HS Kwok, M Wong SID Symposium Digest of Technical Papers 50 (1), 1251-1254, 2019 | 3 | 2019 |
| Enhanced scalability and reliability of InGaZnO thin-film transistor using a combination of plasma fluorination and thermal oxidization L LU, J LI, Z XIA, Z FENG, S WANG, S BEBICHE, HS KWOK, M WONG Proceedings of the International Display Workshops (CD-ROM) 24, 3-4, 2017 | 3 | 2017 |
王文 (Man WONG)Department of Electronic and Computer Engneering, The Hong Kong University of Science and Technology在 ieee.org 的电子邮件经过验证
