| 0.86 kV p-Si/(001)-Ga2O3 heterojunction diode S Xie, MT Alam, J Gong, Q Lin, M Sheikhi, J Zhou, F Alema, A Osinsky, ... IEEE Electron Device Letters, 2024 | 6 | 2024 |
| p-GaAs/n-Ga2O3 heterojunction diode with breakdown voltage of∼ 800 V S Xie, M Sheikhi, S Xu, MT Alam, J Zhou, L Mawst, Z Ma, C Gupta Applied Physics Letters 124 (7), 2024 | 4 | 2024 |
| Technologically enhanced bicycle: Anti-theft security, automated gear system and rear protection N Amin, T Ahmed, SM Olee, MT Alam, T Kaisar 2018 10th International Conference on Electrical and Computer Engineering …, 2018 | 4 | 2018 |
| A High Data Rate Swing Enhanced CMOS Pulse Generator with an Overhead Reducing Technique MT Alam, SM Olee, MT Hasan, MZ Islam, A Roy 2019 25th Asia-Pacific Conference on Communications (APCC), 46-49, 2019 | 2 | 2019 |
| High Voltage (~ 2 kV) field-plated Al0. 64Ga0. 36N-channel HEMTs MT Alam, J Chen, K Stephenson, MAA Mamun, AAM Mazumder, ... arXiv preprint arXiv:2407.10354, 2024 | | 2024 |
| High-Voltage (> 1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 mΩ⋅ cm 2) MT Alam, J Chen, R Bai, SS Pasayat, C Gupta IEEE Transactions on Electron Devices 71 (1), 2024 | | 2024 |
| High-Voltage (1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 m) MT Alam, J Chen, R Bai, SS Pasayat, C Gupta IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Crack-Free High-Composition (> 35%) Thick-Barrier (> 30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (< 250 Ω/□) S Mukhopadhyay, C Liu, J Chen, M Tahmidul Alam, S Sanyal, R Bai, ... Crystals 13 (10), 1456, 2023 | | 2023 |
| A Highly Linear CMOS Amplifier at 5.8 GHz Bolstered with Active Post-distortion for Wireless Applications MT Hasan, MZ Islam, SM Olee, MT Alam, A Roy 2019 25th Asia-Pacific Conference on Communications (APCC), 83-87, 2019 | | 2019 |
