| CVD flowable gap fill F Wang, VY Lu, B Lu, WF Yau, N Draeger US Patent 8,187,951, 2012 | 459 | 2012 |
| Bottom up fill in high aspect ratio trenches L Nittala, K Shannon, N Draeger, M Rathod, H Te Nijenhuis, ... US Patent App. 13/313,735, 2012 | 458 | 2012 |
| Sequential UV induced chemical vapor deposition JA Fair, N Taylor US Patent 7,897,215, 2011 | 436 | 2011 |
| Sequential ion, UV, and electron induced chemical vapor deposition JA Fair, W van den Hoek, N Taylor US Patent 6,627,268, 2003 | 397 | 2003 |
| Sequential electron induced chemical vapor deposition JA Fair, N Taylor US Patent 6,720,260, 2004 | 394 | 2004 |
| Methods and apparatus for forming flowable dielectric films having low porosity M Rathod, D Padhi, N Draeger, BJ Van Schravendijk, K Ashtiani US Patent App. 14/519,712, 2015 | 330 | 2015 |
| Gap fill integration K Ashtiani, M Wood, J Drewery, N Shoda, B Van Schravendijk, L Nittala, ... US Patent 8,728,958, 2014 | 312 | 2014 |
| Low-K oxide deposition by hydrolysis and condensation NM Ndiege, K Nittala, DB Wong, GA Antonelli, NS Draeger, ... US Patent 9,245,739, 2016 | 296 | 2016 |
| Flowable oxide deposition using rapid delivery of process gases CKL Mui, L Nittala, NS Draeger US Patent 8,278,224, 2012 | 281 | 2012 |
| Atomic layer removal process with higher etch amount N Draeger, H Te Nijenhuis, H Meinhold, B Van Schravendijk, L Nittala US Patent 8,058,179, 2011 | 264 | 2011 |
| Flowable oxide film with tunable wet etch rate N Draeger, K Shannon, B Van Schravendijk, K Ashtiani US Patent 8,846,536, 2014 | 253 | 2014 |
| ALD of tantalum using a hydride reducing agent JA Fair, J Sung, N Taylor US Patent 7,144,806, 2006 | 210 | 2006 |
| Selective refractory metal and nitride capping JA Fair, RH Havemann, J Sung, N Taylor, SH Lee, MA Plano US Patent 6,844,258, 2005 | 196 | 2005 |
| Area-selective atomic layer deposition assisted by self-assembled monolayers: A comparison of Cu, Co, W, and Ru D Bobb-Semple, KL Nardi, N Draeger, DM Hausmann, SF Bent Chemistry of Materials 31 (5), 1635-1645, 2019 | 173 | 2019 |
| Low-temperature growth and critical epitaxial thicknesses of fully strained metastable alloys on O Gurdal, P Desjardins, JRA Carlsson, N Taylor, HH Radamson, ... Journal of Applied Physics 83 (1), 162-170, 1998 | 169 | 1998 |
| VLSI fabrication processes for introducing pores into dielectric materials WGM van den Hoek, NS Draeger, R Humayun, RS Hill, J Sun, GW Ray US Patent 7,166,531, 2007 | 128 | 2007 |
| Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus HFR Greer, JA Fair, J Sung, NS Draeger US Patent 7,107,998, 2006 | 97 | 2006 |
| Ge(001) gas‐source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening TR Bramblett, Q Lu, NE Lee, N Taylor, MA Hasan, JE Greene Journal of applied physics 77 (4), 1504-1513, 1995 | 78 | 1995 |
| Growth of Si {sub 1 {minus} x} Ge {sub x}(011) on Si (011) 16 {times} 2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions N Taylor, H Kim, T Spila, JA Eades, G Glass, P Desjardins, JE Greene Journal of Applied Physics 85 (1), 1999 | 71 | 1999 |
| Raman scattering from fully strained alloys grown on by low-temperature molecular beam epitaxy M Rojas-Lopez, H Navarro-Contreras, P Desjardins, O Gurdal, N Taylor, ... Journal of applied physics 84 (4), 2219-2223, 1998 | 55 | 1998 |
