| An assessment of wide bandgap semiconductors for power devices JL Hudgins, GS Simin, E Santi, MA Khan IEEE Transactions on power electronics 18 (3), 907-914, 2003 | 678 | 2003 |
| Nonresonant detection of terahertz radiation in field effect transistors W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ... Journal of Applied Physics 91 (11), 9346-9353, 2002 | 497 | 2002 |
| AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates MA Khan, X Hu, A Tarakji, G Simin, J Yang, R Gaska, MS Shur Applied Physics Letters 77 (9), 1339-1341, 2000 | 429 | 2000 |
| Carrier mobility model for GaN TT Mnatsakanov, ME Levinshtein, LI Pomortseva, SN Yurkov, GS Simin, ... Solid-State Electronics 47 (1), 111-115, 2003 | 339 | 2003 |
| –metal–insulator–semiconductor heterostructure field–effect transistors X Hu, A Koudymov, G Simin, J Yang, MA Khan, A Tarakji, MS Shur, ... Applied Physics Letters 79 (17), 2832-2834, 2001 | 327 | 2001 |
| AlGaN/GaN HEMTs on SiC with fT of over 120 GHz V Kumar, W Lu, R Schwindt, A Kuliev, G Simin, J Yang, MA Khan, ... IEEE Electron Device Letters 23 (8), 455-457, 2002 | 321 | 2002 |
| AlGaN/InGaN/GaN double heterostructure field-effect transistor G Simin, X Hu, A Tarakji, J Zhang, A Koudymov, S Saygi, J Yang, A Khan, ... Japanese Journal of Applied Physics 40 (11A), L1142, 2001 | 288* | 2001 |
| Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management JP Zhang, HM Wang, ME Gaevski, CQ Chen, Q Fareed, JW Yang, ... Applied physics letters 80 (19), 3542-3544, 2002 | 261 | 2002 |
| Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm JP Zhang, A Chitnis, V Adivarahan, S Wu, V Mandavilli, R Pachipulusu, ... Applied physics letters 81 (26), 4910-4912, 2002 | 258 | 2002 |
| Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate X Hu, G Simin, J Yang, MA Khan, R Gaska, MS Shur Electronics Letters 36 (8), 753-754, 2000 | 257 | 2000 |
| The 1.6-kv algan/gan hfets N Tipirneni, A Koudymov, V Adivarahan, J Yang, G Simin, MA Khan IEEE Electron Device Letters 27 (9), 716-718, 2006 | 219 | 2006 |
| Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells E Kuokstis, JW Yang, G Simin, MA Khan, R Gaska, MS Shur Applied Physics Letters 80 (6), 977-979, 2002 | 199 | 2002 |
| Lattice and energy band engineering in AlInGaN/GaN heterostructures MA Khan, JW Yang, G Simin, R Gaska, MS Shur, HC zur Loye, ... Applied Physics Letters 76 (9), 1161-1163, 2000 | 186 | 2000 |
| Polarization effects in photoluminescence of - and -plane GaN/AlGaN multiple quantum wells E Kuokstis, CQ Chen, ME Gaevski, WH Sun, JW Yang, G Simin, ... Applied Physics Letters 81 (22), 4130-4132, 2002 | 169 | 2002 |
| High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates E Frayssinet, W Knap, P Lorenzini, N Grandjean, J Massies, ... Applied Physics Letters 77 (16), 2551-2553, 2000 | 169 | 2000 |
| Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors G Simin, A Koudymov, A Tarakji, X Hu, J Yang, MA Khan, MS Shur, ... Applied Physics Letters 79 (16), 2651-2653, 2001 | 163 | 2001 |
| Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates JW Yang, A Lunev, G Simin, A Chitnis, M Shatalov, MA Khan, ... Applied Physics Letters 76 (3), 273-275, 2000 | 159 | 2000 |
| Field-plate engineering for HFETs S Karmalkar, MS Shur, G Simin, MA Khan IEEE Transactions on electron devices 52 (12), 2534-2540, 2005 | 155 | 2005 |
| New developments in gallium nitride and the impact on power electronics MA Khan, G Simin, SG Pytel, A Monti, E Santi, JL Hudgins 2005 IEEE 36th Power Electronics Specialists Conference, 15-26, 2005 | 151 | 2005 |
| SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs G Simin, A Koudymov, H Fatima, J Zhang, J Yang, MA Khan, X Hu, ... IEEE Electron Device Letters 23 (8), 458-460, 2002 | 141 | 2002 |
