| Trap characterization of trench-gate SiC MOSFETs based on transient drain current S Jiang, M Zhang, X Meng, X Zheng, S Feng, Y Zhang IEEE Transactions on Power Electronics 38 (5), 6555-6565, 2023 | 5 | 2023 |
| Research on transient temperature rise measurement method for semiconductor devices based on photothermal reflection X Meng, M Zhang, K Duan, X Zheng, Y Zhai, S Feng, Y Zhang IEEE Transactions on Instrumentation and Measurement 72, 1-9, 2023 | 4 | 2023 |
| On-line Temperature Measurement Method for SiC MOSFET Device based on Gate Pulse X Meng, M Zhang, S Feng, Y Tang, Y Zhang IEEE Transactions on Power Electronics, 2024 | 3 | 2024 |
| Characterization of trap evolution in GaN-based HEMTs under pulsed stress Q Wen, X Zheng, X Meng, S Feng, P Xu, Y Zhang Microelectronics Reliability 152, 115298, 2024 | 2 | 2024 |
| Transient temperature measurement of silicon carbide Schottky barrier diode based on thermal reflection J Wang, L Zhou, X Meng, H Cheng, S Feng, Y Zhang Review of Scientific Instruments 95 (6), 2024 | 1 | 2024 |
