| Intrinsic and extrinsic performance limits of graphene devices on SiO2 JH Chen, C Jang, S Xiao, M Ishigami, MS Fuhrer Nature nanotechnology 3 (4), 206-209, 2008 | 4104 | 2008 |
| Atomic Structure of Graphene on SiO2 M Ishigami, JH Chen, WG Cullen, MS Fuhrer, ED Williams Nano letters 7 (6), 1643-1648, 2007 | 2011 | 2007 |
| Charged-impurity scattering in graphene JH Chen, C Jang, S Adam, MS Fuhrer, ED Williams, M Ishigami Nature Physics 4 (5), 377-381, 2008 | 1839 | 2008 |
| Charged-impurity scattering in graphene M Ishigami, J Chen, C Jang, ED Williams, MS Fuhrer Bulletin of the American Physical Society 53, 2008 | 1839* | 2008 |
| Defect scattering in graphene JH Chen, WG Cullen, C Jang, MS Fuhrer, ED Williams Physical review letters 102 (23), 236805, 2009 | 755 | 2009 |
| Tunable Kondo effect in graphene with defects JH Chen, L Li, WG Cullen, ED Williams, MS Fuhrer Nature Physics 7 (7), 535-538, 2011 | 444 | 2011 |
| Tuning the effective fine structure constant in graphene: Opposing effects of dielectric screening on short-and long-range potential scattering C Jang, S Adam, JH Chen, ED Williams, S Das Sarma, MS Fuhrer Physical review letters 101 (14), 146805, 2008 | 440 | 2008 |
| Printed graphene circuits JH Chen, M Ishigami, C Jang, DR Hines, MS Fuhrer, ED Williams Advanced Materials 19 (21), 3623-3627, 2007 | 376 | 2007 |
| Atomic resolution imaging of grain boundary defects in monolayer chemical vapor deposition-grown hexagonal boron nitride AL Gibb, N Alem, JH Chen, KJ Erickson, J Ciston, A Gautam, M Linck, ... Journal of the American Chemical Society 135 (18), 6758-6761, 2013 | 270 | 2013 |
| Nonlinear photoresponse of type-II Weyl semimetals J Ma, Q Gu, Y Liu, J Lai, P Yu, X Zhuo, Z Liu, JH Chen, J Feng, D Sun Nature materials 18 (5), 476-481, 2019 | 245 | 2019 |
| On the quantum spin Hall gap of monolayer 1T'-WTe2 F Zheng, C Cai, S Ge, X Zhang, X Liu, H Lu, Y Zhang, J Qiu, T Taniguchi, ... arXiv preprint arXiv:1605.04656, 2016 | 184 | 2016 |
| Anisotropic Broadband Photoresponse of Layered Type‐II Weyl Semimetal MoTe2 J Lai, X Liu, J Ma, Q Wang, K Zhang, X Ren, Y Liu, Q Gu, X Zhuo, W Lu, ... Advanced materials 30 (22), 1707152, 2018 | 176 | 2018 |
| High-Fidelity Conformation of Graphene to Topographic Features WG Cullen, M Yamamoto, KM Burson, JH Chen, C Jang, L Li, MS Fuhrer, ... Physical review letters 105 (21), 215504, 2010 | 172 | 2010 |
| Diffusive charge transport in graphene on SiO 2 JH Chen, C Jang, M Ishigami, S Xiao, WG Cullen, ED Williams, MS Fuhrer Solid State Communications 149 (27), 1080-1086, 2009 | 158 | 2009 |
| Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering JH Chen, G Autès, N Alem, F Gargiulo, A Gautam, M Linck, C Kisielowski, ... Physical Review B 89 (12), 121407, 2014 | 141 | 2014 |
| Hooge’s constant for carbon nanotube field effect transistors M Ishigami, JH Chen, ED Williams, D Tobias, YF Chen, MS Fuhrer Applied Physics Letters 88 (20), 2006 | 126 | 2006 |
| Charged impurity scattering in bilayer graphene S Xiao, JH Chen, S Adam, ED Williams, MS Fuhrer Physical Review B—Condensed Matter and Materials Physics 82 (4), 041406, 2010 | 117 | 2010 |
| Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit S Song, Y Sim, SY Kim, JH Kim, I Oh, W Na, DH Lee, J Wang, S Yan, ... Nature Electronics 3 (4), 207-215, 2020 | 115 | 2020 |
| Broadband Anisotropic Photoresponse of the “Hydrogen Atom” Version Type-II Weyl Semimetal Candidate TaIrTe4 J Lai, Y Liu, J Ma, X Zhuo, Y Peng, W Lu, Z Liu, J Chen, D Sun ACS nano 12 (4), 4055-4061, 2018 | 109 | 2018 |
| Wafer-scale growth of single-crystal 2D semiconductor on perovskite oxides for high-performance transistors C Tan, M Tang, J Wu, Y Liu, T Li, Y Liang, B Deng, Z Tan, T Tu, Y Zhang, ... Nano Letters 19 (3), 2148-2153, 2019 | 99 | 2019 |
Michael S. FuhrerSchool of Physics, Monash University; Department of Physics, University of Maryland在 monash.edu 的电子邮件经过验证
