| Crystal phase quantum dots N Akopian, G Patriarche, L Liu, JC Harmand, V Zwiller Nano letters 10 (4), 1198-1201, 2010 | 312 | 2010 |
| Wurtzite GaAs/AlGaAs core–shell nanowires grown by molecular beam epitaxy HL Zhou, TB Hoang, DL Dheeraj, ATJ Van Helvoort, L Liu, JC Harmand, ... Nanotechnology 20 (41), 415701, 2009 | 60 | 2009 |
| Electron density dependence of in-plane spin relaxation anisotropy in GaAs∕ AlGaAs two-dimensional electron gas B Liu, H Zhao, J Wang, L Liu, W Wang, D Chen, H Zhu Applied physics letters 90 (11), 2007 | 44 | 2007 |
| The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy H Gao, W Wang, Z Jiang, L Liu, J Zhou, H Chen Journal of crystal growth 308 (2), 406-411, 2007 | 30 | 2007 |
| Optics with single nanowires V Zwiller, N Akopian, M Van Weert, M Van Kouwen, U Perinetti, ... Comptes Rendus Physique 9 (8), 804-815, 2008 | 29 | 2008 |
| InP1− xAsx quantum dots in InP nanowires: A route for single photon emitters JC Harmand, F Jabeen, L Liu, G Patriarche, K Gauthron, P Senellart, ... Journal of crystal growth 378, 519-523, 2013 | 20 | 2013 |
| Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step Z Jiang, W Wang, H Gao, L Liu, H Chen, J Zhou Applied surface science 254 (16), 5241-5246, 2008 | 19 | 2008 |
| Potential of semiconductor nanowires for single photon sources JC Harmand, L Liu, G Patriarche, M Tchernycheva, N Akopian, U Perinetti, ... Quantum Sensing and Nanophotonic Devices VI 7222, 378-387, 2009 | 12 | 2009 |
| Influence of interface interruption on spin relaxation in GaAs (1 1 0) quantum wells LS Liu, WX Wang, ZH Li, BL Liu, HM Zhao, J Wang, HC Gao, ZW Jiang, ... Journal of crystal growth 301, 93-96, 2007 | 12 | 2007 |
| A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers G Liu, W Chen, L Liu, P Jin, Y Tian, J Yang Optics Communications 374, 114-118, 2016 | 11 | 2016 |
| Colorimetric quantification of aqueous hydrogen peroxide in the DC plasma-liquid system YU Renze, LIU Zhaoyuan, LIN Jiao, HE Xinyi, LIU Linsheng, Q Xiong, ... Plasma Science and Technology 23 (5), 055504, 2021 | 7 | 2021 |
| Growth of III-Arsenide/Phosphide nanowires by molecular beam epitaxy JC Harmand, F Glas, G Patriarche, L Largeau, M Tchernycheva, C Sartel, ... Advances in III-V Semiconductor Nanowires and Nanodevices, 68-88, 2011 | 4 | 2011 |
| Buffer influence on AlSb/InAs/AlSb quantum wells ZH Li, WX Wang, LS Liu, HC Gao, ZW Jiang, JM Zhou, H Chen Journal of crystal growth 301, 181-184, 2007 | 4 | 2007 |
| As 保护下的生长中断时间对 AlSb/InAs 超晶格界面粗糙度的影响 李志华， 王文新， 刘林生， 蒋中伟， 高汉超， 周均铭 物理学报 56 (003), 1785-1789, 2007 | 3 | 2007 |
| Non-destructive spectroscopic investigation of n-type 4H-SiC defects irradiated with low fluence 16.5 MeV/u Ta ions B Mao, G Zhao, X Lv, X Wang, W Wei, G Liu, J Liu, L Liu IEEE Transactions on Nuclear Science, 2024 | 2 | 2024 |
| 印制电路板在线故障诊断技术探讨 刘林生， 张东 第 20 届测控, 计量, 仪器仪表学术年会论文集, 2010 | 2 | 2010 |
| GaAs (110) 量子阱材料生长和光学特性 刘林生， 刘肃， 王文新， 赵宏鸣， 刘宝利， 蒋中伟， 高汉超， 王佳， 黄庆安， ... Optics and Precision Engineering 15 (5), 678-683, 2007 | 2 | 2007 |
| Revisiting the application of molecular probe diagnostics on quantifying aqueous OH radicals in plasma–liquid systems Q Tang, M Zhang, B Wu, X Wang, X Tu, K Ostrikov, L Liu, Q Chen Plasma Processes and Polymers, e2300229, 2024 | 1 | 2024 |
| Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy L Liu, R Chen, C Kong, Z Deng, G Liu, J Yan, L Qin, H Du, S Song, ... Materials 17 (4), 845, 2024 | 1 | 2024 |
| Migration-Enhanced Epitaxial Growth of InAs/GaAs Short-Period Superlattices for THz Generation R Chen, X Li, H Du, J Yan, C Kong, G Liu, G Lu, X Zhang, S Song, ... Nanomaterials 14 (3), 294, 2024 | 1 | 2024 |
Jean-Christophe Harmand在 c2n.upsaclay.fr 的电子邮件经过验证
