| Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications T Zine-eddine, H Zahra, M Zitouni Journal of Science: Advanced Materials and Devices 4 (1), 180-187, 2019 | 52 | 2019 |
| Dc and rf characteristics of AlGaN/GaN hemt and mos-hemt Z Touati, Z Hamaizia, Z Messai 2015 4th International Conference on Electrical Engineering (ICEE), 1-4, 2015 | 14 | 2015 |
| Study of AlGaN/GaN MOS-HEMTs with TiO2 Gate Dielectric and Regrown Source/Drain Z Touati, Z Hamaiziaa, Z Messaib JOURNAL OF NEW TECHNOLOGY AND MATERIALS 8 (2), 16-23, 2018 | 3 | 2018 |
| Numerical study of T-Gate AlGaN/AlInGaN/GaN MOSHEMT with Single and Double Barrier for THz Frequency Applications A Noual, M Zitouni, Z Touati, O Saidani, A Yousfi East European Journal of Physics, 216-225, 2023 | 1 | 2023 |
| RF Performance Analysis of Conventional and Recessed Gate AlGaN/GaN MOSHEMT using β–Ga2O3 as Dielectric Layer N Amina, M Zitouni, T Zineeddine 2023 International Conference on Advances in Electronics, Control and …, 2023 | 1 | 2023 |
| Contribution à la modélisation non linéaire et l'optimisation des transistors à effet de champ à hétérojonction par des méthodes intelligentes touati zine-eddine Université Mohamed Khider - Biskra, 2019 | 1 | 2019 |
| Influence of High-k Dielectric Materials on AlGaN/AlInGaN/GaN MOS-HEMT Grown on β-Ga2O3Substrate: Numerical Study N Amina, M Zitouni, T Zineeddine 2024 2nd International Conference on Electrical Engineering and Automatic …, 2024 | | 2024 |
| Comparative Analysis of DC Characteristics of AlGaN/InAlGaN/GaN MOS-HEMT with a Single and Double Barrier zine-eddine touati noual amina,zitouni messai 1st international conference on materials and energy tamanrasset 2021, 2021 | | 2021 |
| Caractérisation du transistor bipolaire à grille isolée IGBT M Amine Faculté des Sciences et Technologies, 2021 | | 2021 |
| Modélisation du transistor FET à base de semiconducteurs organiques M Wassil Faculté des Sciences et Technologies, 2020 | | 2020 |
| Temperature effect on the drain and grid currents of MOS /SiC structure M Touati zineeddine international training workshop machine learning and python tunisie 2019, 2019 | | 2019 |
| Modélisation et optimisation des transistors GaN HEMT par les algorithmes génétiques N Asma | | 2019 |
| Optimization of Small-Signal Model of E-mode GaN MOS-HEMT by Using Genetic and Simulated Annealing Algorithms Z TOUATI, Z HAMAIZIA, Z MESSAI | | 2019 |
| Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications Z TOUATI, Z HAMAIZIA, Z MESSAI | | 2019 |
| Study of AlGaN/GaN MOS-HEMTs with TiO2 Gate Dielectric and Regrown Source/Drain T Zineeddine, Z Hamaizia, Z Messai Journal of New Technology and Materials (JNTM) 8 (2), 16-23, 2018 | | 2018 |
| DC/RF performance of AlGaN/GaN underlap MOS-HEMT Z messai, ZE Touati, TH Nouibat, Z Ouennoughi, H Zahra INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE ICMS2018, 2018 | | 2018 |
zitouni messaiLaboratory ETA, University Mohamed El Bachir El Ibrahimi, Algeria在 univ-bba.dz 的电子邮件经过验证
