| Monolithic β-Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs V Khandelwal, S Yuvaraja, GIM García, C Wang, Y Lu, F AlQatari, X Li Applied Physics Letters 122 (14), 2023 | 12 | 2023 |
| Three-dimensional integrated metal-oxide transistors S Yuvaraja, H Faber, M Kumar, N Xiao, GI Maciel García, X Tang, ... Nature Electronics 7 (9), 768-776, 2024 | 6 | 2024 |
| Etching-free pixel definition in InGaN green micro-LEDs Z Liu, Y Lu, H Cao, GI Maciel Garcia, T Liu, X Tang, N Xiao, ... Light: Science & Applications 13 (1), 117, 2024 | 5 | 2024 |
| Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors S Yuvaraja, V Khandelwal, S Krishna, Y Lu, Z Liu, M Kumar, X Tang, ... ACS Applied Materials & Interfaces 16 (5), 6088-6097, 2024 | 5 | 2024 |
| Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD M Nong, CH Liao, X Tang, H Cao, T Liu, PAM Cortez, D Chettri, ... Applied Physics Letters 124 (17), 2024 | 3 | 2024 |
| Significant improvement of n-contact performance and wall plug efficiency of AlGaN-based deep ultraviolet light-emitting diodes by atomic layer etching Z Liu, T Liu, H Cao, Z Jiang, N Xiao, GIM Garcia, Y Lu, X Tang, X Li Optics Letters 49 (16), 4533-4536, 2024 | 2 | 2024 |
| Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics V Khandelwal, MK Rajbhar, GIM García, X Tang, B Sarkar, X Li Japanese Journal of Applied Physics 62 (6), 060902, 2023 | 2 | 2023 |
| Spin orbit torque tunable skyrmion neuromorphic devices AH Lone, X Zou, GIM Garcia, X Li, H Fariborzi 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2022 | 2 | 2022 |
| Pseudo-source gated beta-gallium oxide MOSFET G Mainali, D Chettri, V Khandelwal, M Kumar, GIM García, Z Liu, N Xiao, ... Applied Physics Letters 125 (14), 2024 | 1 | 2024 |
| Inductively Coupled Plasma Reactive Ion Etching of (− 201) β-Ga2O3 Nano-Fins GI Maciel Garcia, V Khandelwal, Y Lu, S Yuvaraja, X Li Wiley, 2024 | | 2024 |
| Optimization of Growth Temperature and V/III Ratio toward High-Quality Si-Doped Aluminum Nitride Thin Films on Sapphire H Cao, M Nong, X Tang, C Liao, GI Maciel Garcia, V Khandelwal, Y Wu, ... Crystal Growth & Design 24 (19), 7871-7877, 2024 | | 2024 |
| Field management in NiO x/β-Ga2O3 merged-PIN Schottky diodes: simulation studies and experimental validation JMT Vasquez, A Mukherjee, S Singh, V Khandelwal, S Yuvaraja, ... Journal of Physics D: Applied Physics 57 (44), 445105, 2024 | | 2024 |
| Demonstration of Ga2O3 trigate transistors on (100) silicon substrates S Yuvaraja, V Khandelwal, S Krishna, Y Lu, Z Liu, M Kumar, D Chettri, ... 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022 | | 2022 |
| VP4-17: Multilayer Spintronic Devices as Synapse and Neuron for Neuromorphic Computing Applications AH Lone, X Zou, GIM Garcia, H Fariborzi, G Setti | | |
Xiaohang LiAssociate Professor, Advanced Semiconductor Lab, ECE, CEMSE在 kaust.edu.sa 的电子邮件经过验证
