| Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy LW Tu, CL Hsiao, TW Chi, I Lo, KY Hsieh Applied Physics Letters 82 (10), 1601-1603, 2003 | 155 | 2003 |
| Generation of electricity in GaN nanorods induced by piezoelectric effect WS Su, YF Chen, CL Hsiao, LW Tu Applied Physics Letters 90 (6), 2007 | 131 | 2007 |
| A free‐standing high‐output power density thermoelectric device based on structure‐ordered PEDOT: PSS Z Li, H Sun, CL Hsiao, Y Yao, Y Xiao, M Shahi, Y Jin, A Cruce, X Liu, ... Advanced Electronic Materials 4 (2), 1700496, 2018 | 111 | 2018 |
| Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy CL Hsiao, LW Tu, TW Chi, M Chen, TF Young, CT Chia, YM Chang Applied Physics Letters 90 (4), 2007 | 90 | 2007 |
| Specular scattering probability of acoustic phonons in atomically flat interfaces YC Wen, CL Hsieh, KH Lin, HP Chen, SC Chin, CL Hsiao, YT Lin, ... Physical review letters 103 (26), 264301, 2009 | 72 | 2009 |
| Electronic-grade GaN (0001)/Al2O3 (0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target M Junaid, CL Hsiao, J Palisaitis, J Jensen, PO Persson, L Hultman, ... Applied Physics Letters 98 (14), 2011 | 66 | 2011 |
| Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material V Darakchieva, K Lorenz, NP Barradas, E Alves, B Monemar, M Schubert, ... Applied Physics Letters 96 (8), 2010 | 50 | 2010 |
| Review of GaN thin film and nanorod growth using magnetron sputter epitaxy A Prabaswara, J Birch, M Junaid, EA Serban, L Hultman, CL Hsiao Applied Sciences 10 (9), 3050, 2020 | 44 | 2020 |
| Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors CL Hsiao, HC Hsu, LC Chen, CT Wu, CW Chen, M Chen, LW Tu, ... Applied Physics Letters 91 (18), 2007 | 41 | 2007 |
| Polycrystalline to single-crystalline InN grown on Si (111) substrates by plasma-assisted molecular-beam epitaxy CL Hsiao, LW Tu, M Chen, ZW Jiang, NW Fan, YJ Tu, KR Wang Japanese journal of applied physics 44 (8L), L1076, 2005 | 40 | 2005 |
| Effect of strain on low-loss electron energy loss spectra of group-III nitrides J Palisaitis, CL Hsiao, M Junaid, J Birch, L Hultman, POÅ Persson Physical Review B—Condensed Matter and Materials Physics 84 (24), 245301, 2011 | 37 | 2011 |
| High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment CL Hsiao, TW Liu, CT Wu, HC Hsu, GM Hsu, LC Chen, WY Shiao, ... Applied Physics Letters 92 (11), 2008 | 36 | 2008 |
| Energy relaxation of InN thin films DJ Jang, GT Lin, CL Wu, CL Hsiao, LW Tu, ME Lee Applied Physics Letters 91 (9), 2007 | 36 | 2007 |
| Polarization-resolved fine-structure splitting of zero-dimensional InGaN excitons S Amloy, YT Chen, KF Karlsson, KH Chen, HC Hsu, CL Hsiao, LC Chen, ... Physical Review B—Condensed Matter and Materials Physics 83 (20), 201307, 2011 | 34 | 2011 |
| Auger recombination in InN thin films DJ Jang, GT Lin, CL Hsiao, LW Tu, ME Lee Applied Physics Letters 92 (4), 2008 | 34 | 2008 |
| Structural anisotropy of nonpolar and semipolar InN epitaxial layers V Darakchieva, MY Xie, N Franco, F Giuliani, B Nunes, E Alves, CL Hsiao, ... Journal of Applied Physics 108 (7), 2010 | 33 | 2010 |
| Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry V Darakchieva, M Schubert, T Hofmann, B Monemar, CL Hsiao, TW Liu, ... Applied Physics Letters 95 (20), 2009 | 33 | 2009 |
| Buffer controlled GaN nanorods growth on Si (111) substrates by plasma-assisted molecular beam epitaxy CL Hsiao, LW Tu, TW Chi, HW Seo, QY Chen, WK Chu Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 32 | 2006 |
| Room-temperature heteroepitaxy of single-phase Al1− xInxN films with full composition range on isostructural wurtzite templates CL Hsiao, J Palisaitis, M Junaid, POÅ Persson, J Jensen, QX Zhao, ... Thin Solid Films 524, 113-120, 2012 | 31 | 2012 |
| Epitaxial GaN nanorods free from strain and luminescent defects HW Seo, QY Chen, MN Iliev, LW Tu, CL Hsiao, JK Mean, WK Chu Applied physics letters 88 (15), 2006 | 31 | 2006 |
