| AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10% M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... Applied Physics Express 5 (8), 082101, 2012 | 530 | 2012 |
| 270 nm pseudomorphic ultraviolet light-emitting diodes with over 60 mW continuous wave output power JR Grandusky, J Chen, SR Gibb, MC Mendrick, CG Moe, L Rodak, ... Applied Physics Express 6 (3), 032101, 2013 | 207 | 2013 |
| High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance JR Grandusky, SR Gibb, MC Mendrick, C Moe, M Wraback, LJ Schowalter Applied Physics Express 4 (8), 082101, 2011 | 192 | 2011 |
| Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation A Uedono, S Ishibashi, S Keller, C Moe, P Cantu, TM Katona, DS Kamber, ... Journal of Applied Physics 105 (5), 2009 | 90 | 2009 |
| Current-induced degradation of high performance deep ultraviolet light emitting diodes CG Moe, ML Reed, GA Garrett, AV Sampath, T Alexander, H Shen, ... Applied Physics Letters 96 (21), 2010 | 89 | 2010 |
| Large chip high power deep ultraviolet light-emitting diodes M Shatalov, W Sun, Y Bilenko, A Sattu, X Hu, J Deng, J Yang, M Shur, ... Applied physics express 3 (6), 062101, 2010 | 51 | 2010 |
| Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates S Heikman, S Keller, S Newman, Y Wu, C Moe, B Moran, M Schmidt, ... Japanese journal of applied physics 44 (3L), L405, 2005 | 50 | 2005 |
| Highly Doped AlScN 3.5 GHz XBAW Resonators with 16% k 2 eff for 5G RF Filter Applications C Moe, M D’Agati, RH Olsson III, M Winters, P Patel, R Vetury, Z Tang, ... | 42 | 2020 |
| Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide CG Moe, H Masui, MC Schmidt, L Shen, B Moran, S Newman, K Vampola, ... Japanese journal of applied physics 44 (4L), L502, 2005 | 42 | 2005 |
| AlGaN light‐emitting diodes on AlN substrates emitting at 230 nm CG Moe, S Sugiyama, J Kasai, JR Grandusky, LJ Schowalter physica status solidi (a) 215 (10), 1700660, 2018 | 37 | 2018 |
| AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths CG Moe, Y Wu, J Piprek, S Keller, JS Speck, SP DenBaars, D Emerson physica status solidi (a) 203 (8), 1915-1919, 2006 | 32 | 2006 |
| Electrical and structural characterization of Mg-doped p-type Al0. 69Ga0. 31N films on SiC substrate A Chakraborty, CG Moe, Y Wu, T Mates, S Keller, JS Speck, SP DenBaars, ... Journal of Applied Physics 101 (5), 2007 | 29 | 2007 |
| Controlling residual stress and suppression of anomalous grains in aluminum scandium nitride films grown directly on silicon R Beaucejour, V Roebisch, A Kochhar, CG Moe, MD Hodge, RH Olsson Journal of Microelectromechanical Systems 31 (4), 604-611, 2022 | 27 | 2022 |
| Influence of silicon doping on vacancies and optical properties of AlxGa1− xN thin films J Slotte, F Tuomisto, K Saarinen, CG Moe, S Keller, SP DenBaars Applied physics letters 90 (15), 2007 | 27 | 2007 |
| A manufacturable AlScN periodically polarized piezoelectric film bulk acoustic wave resonator (AlScN P3F BAW) operating in overtone mode at X and Ku Band R Vetury, A Kochhar, J Leathersich, C Moe, M Winters, J Shealy, ... 2023 IEEE/MTT-S International Microwave Symposium-IMS 2023, 891-894, 2023 | 26 | 2023 |
| Metalorganic chemical vapor deposition conditions for efficient silicon doping in high Al-composition AlGaN films S Keller, P Cantu, C Moe, Y Wu, S Keller, UK Mishra, JS Speck, ... Japanese journal of applied physics 44 (10R), 7227, 2005 | 24 | 2005 |
| Internal efficiency analysis of 280-nm light emitting diodes J Piprek, CG Moe, SL Keller, S Nakamura, SP DenBaars Physics and Applications of Optoelectronic Devices 5594, 177-184, 2004 | 22 | 2004 |
| Growth and fabrication of short-wavelength UV LEDs TM Katona, T Margalith, C Moe, MC Schmidt, S Nakamura, JS Speck, ... Proceedings of SPIE 5187, 250, 2004 | 17 | 2004 |
| Systems and methods for fluid treatment with homogeneous distribution of ultraviolet light J Chen, RV Randive, C Moe US Patent 9,321,658, 2016 | 16 | 2016 |
| 278 nm deep ultraviolet LEDs with 11% external quantum efficiency M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... 70th Device Research Conference, 255-256, 2012 | 15 | 2012 |
Steven DenBaarsProfessor of Materials, University of California Santa Barbara在 engineering.ucsb.edu 的电子邮件经过验证
