Terawatt-scale photovoltaics: Trajectories and challenges NM Haegel, R Margolis, T Buonassisi, D Feldman, A Froitzheim, ... Science 356 (6334), 141-143, 2017 | 442 | 2017 |
Reduction algorithms for the multiband imaging photometer for spitzer KD Gordon, GH Rieke, CW Engelbracht, J Muzerolle, JA Stansberry, ... Publications of the Astronomical Society of the Pacific 117 (831), 503, 2005 | 440 | 2005 |
Terawatt-scale photovoltaics: Transform global energy NM Haegel, H Atwater Jr, T Barnes, C Breyer, A Burrell, YM Chiang, ... Science 364 (6443), 836-838, 2019 | 426 | 2019 |
Solar photovoltaics is ready to power a sustainable future M Victoria, N Haegel, IM Peters, R Sinton, A Jäger-Waldau, C del Canizo, ... Joule 5 (5), 1041-1056, 2021 | 352 | 2021 |
Increasing markets and decreasing package weight for high-specific-power photovoltaics MO Reese, S Glynn, MD Kempe, DL McGott, MS Dabney, TM Barnes, ... Nature Energy 3 (11), 1002-1012, 2018 | 138 | 2018 |
Cathodoluminescence for the 21st century: Learning more from light T Coenen, NM Haegel Applied Physics Reviews 4 (3), 2017 | 100 | 2017 |
Photovoltaics at multi-terawatt scale: Waiting is not an option NM Haegel, P Verlinden, M Victoria, P Altermatt, H Atwater, T Barnes, ... Science 380 (6640), 39-42, 2023 | 81 | 2023 |
Relaxation semiconductors: In theory and in practice NM Haegel Applied Physics A 53, 1-7, 1991 | 69 | 1991 |
A new era for solar S Kurtz, N Haegel, R Sinton, R Margolis Nature photonics 11 (1), 3-5, 2017 | 61 | 2017 |
Reactive ion etching of GaAs with CCl2F2:O2: Etch rates, surface chemistry, and residual damage SJ Pearton, MJ Vasile, KS Jones, KT Short, E Lane, TR Fullowan, ... Journal of applied physics 65 (3), 1281-1292, 1989 | 60 | 1989 |
Interpretation of photoluminescence excitation spectroscopy of porous Si layers L Wang, MT Wilson, NM Haegel Applied physics letters 62 (10), 1113-1115, 1993 | 58 | 1993 |
Global progress toward renewable electricity: Tracking the role of solar NM Haegel, SR Kurtz IEEE Journal of Photovoltaics 11 (6), 1335-1342, 2021 | 56 | 2021 |
GaAs solar cells grown by hydride vapor-phase epitaxy and the development of GaInP cladding layers J Simon, KL Schulte, DL Young, NM Haegel, AJ Ptak IEEE Journal of Photovoltaics 6 (1), 191-195, 2015 | 54 | 2015 |
Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP NM Haegel, TJ Mills, M Talmadge, C Scandrett, CL Frenzen, H Yoon, ... Journal of Applied Physics 105 (2), 2009 | 53 | 2009 |
Countdown to perovskite space launch: Guidelines to performing relevant radiation-hardness experiments AR Kirmani, BK Durant, J Grandidier, NM Haegel, MD Kelzenberg, ... Joule 6 (5), 1015-1031, 2022 | 51 | 2022 |
Imaging transport for the determination of minority carrier diffusion length DR Luber, FM Bradley, NM Haegel, MC Talmadge, MP Coleman, ... Applied Physics Letters 88 (16), 2006 | 49 | 2006 |
Temperature dependence of diffusion length, lifetime and minority electron mobility in GaInP FJ Schultes, T Christian, R Jones-Albertus, E Pickett, K Alberi, B Fluegel, ... Applied Physics Letters 103 (24), 2013 | 48 | 2013 |
Spatial distribution of free‐carrier lifetime and deep‐level luminescence across a semi‐insulating GaAs wafer K Leo, WW Rühle, NM Haegel Journal of applied physics 62 (7), 3055-3058, 1987 | 46 | 1987 |
Experimental study of transport in a trap-dominated relaxation semiconductor N Derhacobian, NM Haegel Physical Review B 44 (23), 12754, 1991 | 43 | 1991 |
Revisiting the terawatt challenge SR Kurtz, AM Leilaeioun, RR King, IM Peters, MJ Heben, WK Metzger, ... MRS Bulletin 45 (3), 159-164, 2020 | 41 | 2020 |