Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution J Suh, TE Park, DY Lin, D Fu, J Park, HJ Jung, Y Chen, C Ko, C Jang, ... Nano letters 14 (12), 6976-6982, 2014 | 714 | 2014 |
Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures K Liu, Q Yan, M Chen, W Fan, Y Sun, J Suh, D Fu, S Lee, J Zhou, ... Nano letters 14 (9), 5097-5103, 2014 | 639 | 2014 |
Efficient photovoltaic current generation at ferroelectric domain walls J Seidel, D Fu, SY Yang, E Alarcón-Lladó, J Wu, R Ramesh, JW Ager III Physical review letters 107 (12), 126805, 2011 | 432 | 2011 |
Chemical Vapor Deposition of Large-Size Monolayer MoSe2 Crystals on Molten Glass J Chen, X Zhao, SJR Tan, H Xu, B Wu, B Liu, D Fu, W Fu, D Geng, Y Liu, ... Journal of the American Chemical Society 139 (3), 1073-1076, 2017 | 304 | 2017 |
Molecular beam epitaxy of highly crystalline monolayer molybdenum disulfide on hexagonal boron nitride D Fu, X Zhao, YY Zhang, L Li, H Xu, AR Jang, SI Yoon, P Song, SM Poh, ... Journal of the American Chemical Society 139 (27), 9392-9400, 2017 | 212 | 2017 |
Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films D Fu, K Liu, T Tao, K Lo, C Cheng, B Liu, R Zhang, HA Bechtel, J Wu Journal of Applied Physics 113 (4), 2013 | 193 | 2013 |
Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory C Ko, Y Lee, Y Chen, J Suh, D Fu, A Suslu, S Lee, JD Clarkson, HS Choe, ... Adv. Mater 28 (15), 2923-2930, 2016 | 155 | 2016 |
Achieving Ultrafast Hole Transfer at the Monolayer MoS2 and CH3NH3PbI3 Perovskite Interface by Defect Engineering B Peng, G Yu, Y Zhao, Q Xu, G Xing, X Liu, D Fu, B Liu, JRS Tan, W Tang, ... ACS nano 10 (6), 6383-6391, 2016 | 141 | 2016 |
Mo-terminated edge reconstructions in nanoporous molybdenum disulfide film X Zhao, D Fu, Z Ding, YY Zhang, D Wan, SJR Tan, Z Chen, K Leng, J Dan, ... Nano letters 18 (1), 482-490, 2018 | 121 | 2018 |
Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi2Te3 by Multifunctionality of Native Defects J Suh, KM Yu, D Fu, X Liu, F Yang, J Fan, DJ Smith, YH Zhang, ... Advanced materials 27 (24), 3681-3686, 2015 | 117 | 2015 |
MoS2 Heterojunctions by Thickness Modulation JWAJ Mahmut Tosun, Deyi Fu, Sujay B. Desai, Changhyun Ko, Jeong Seuk Kang ... Scientific Reports 5, 10990, 2015 | 115 | 2015 |
Signals for specular Andreev reflection Q Zhang, D Fu, B Wang, R Zhang, DY Xing Physical review letters 101 (4), 047005, 2008 | 115 | 2008 |
Intensity tunable infrared broadband absorbers based on VO2 phase transition using planar layered thin films H Kocer, S Butun, E Palacios, Z Liu, S Tongay, D Fu, K Wang, J Wu, ... Scientific reports 5 (1), 13384, 2015 | 110 | 2015 |
Powerful, multifunctional torsional micromuscles activated by phase transition K Liu, C Cheng, J Suh, R Tang-Kong, D Fu, S Lee, J Zhou, LO Chua, J Wu Adv. Mater 26 (11), 1746-1750, 2014 | 99 | 2014 |
Gate-dependent pseudospin mixing in graphene/boron nitride moiré superlattices Z Shi, C Jin, W Yang, L Ju, J Horng, X Lu, HA Bechtel, MC Martin, D Fu, ... Nature Physics 10 (10), 743-747, 2014 | 89 | 2014 |
Molecular Beam Epitaxy of Highly Crystalline MoSe2 on Hexagonal Boron Nitride SM Poh, X Zhao, SJR Tan, D Fu, W Fei, L Chu, D Jiadong, W Zhou, ... ACS nano 12 (8), 7562-7570, 2018 | 81 | 2018 |
Self-Assembly and Horizontal Orientation Growth of VO2 Nanowires C Cheng, H Guo, A Amini, K Liu, D Fu, J Zou, H Song Scientific Reports 4 (1), 5456, 2014 | 77 | 2014 |
Dense electron system from gate-controlled surface metal–insulator transition K Liu, D Fu, J Cao, J Suh, KX Wang, C Cheng, DF Ogletree, H Guo, ... Nano letters 12 (12), 6272-6277, 2012 | 70 | 2012 |
Large area synthesis of 1D-MoSe2 using molecular beam epitaxy SM Poh, SJR Tan, X Zhao, Z Chen, I Abdelwahab, D Fu, H Xu, Y Bao, ... Adv. Mater 29 (12), 1605641, 2017 | 64 | 2017 |
Electrothermal dynamics of semiconductor nanowires under local carrier modulation D Fu, J Zou, K Wang, R Zhang, D Yu, J Wu Nano letters 11 (9), 3809-3815, 2011 | 62 | 2011 |