| Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric T Frank, S Moreau, C Chappaz, P Leduc, L Arnaud, A Thuaire, E Chery, ... Microelectronics Reliability 53 (1), 17-29, 2013 | 108 | 2013 |
| Resistance increase due to electromigration induced depletion under TSV T Frank, C Chappaz, P Leduc, L Arnaud, F Lorut, S Moreau, A Thuaire, ... 2011 International Reliability Physics Symposium, 3F. 4.1-3F. 4.6, 2011 | 98 | 2011 |
| Electromigration behavior of 3D-IC TSV interconnects T Frank, S Moreau, C Chappaz, L Arnaud, P Leduc, A Thuaire, L Anghel 2012 IEEE 62nd Electronic Components and Technology Conference, 326-330, 2012 | 52 | 2012 |
| Reliability approach of high density through silicon via (TSV) T Frank, C Chappaz, P Leduc, L Arnaud, S Moreau, A Thuaire, ... 2010 12th Electronics Packaging Technology Conference, 321-324, 2010 | 48 | 2010 |
| Electrical and morphological assessment of via middle and backside process technology for 3D integration JP Colonna, P Coudrain, G Garnier, P Chausse, R Segaud, C Aumont, ... 2012 IEEE 62nd Electronic Components and Technology Conference, 796-802, 2012 | 15 | 2012 |
| Through silicon via impact on above BEoL time dependent dielectric breakdown T Frank, E Chery, C Chappaz, L Arnaud, L Anghel 2012 IEEE International Integrated Reliability Workshop Final Report, 41-44, 2012 | 3 | 2012 |
| Electromigration degradation mechanism analysis of SnAgCu interconnects for eWLB package T Frank, C Chappaz, L Arnaud, X Federspiel, F Colella, E Petitprez, ... 2012 IEEE International Reliability Physics Symposium (IRPS), 2E. 5.1-2E. 5.6, 2012 | 3 | 2012 |
| Electromigration Behavior of 3D-IC TSV T Frank, C Chappaz, P Leduc, L Arnaud, S Moreau, A Thuaire, F Lorut, ... Second IEEE International Workshop on Testing Three-Dimensional Stacked …, 2011 | | 2011 |
