| Layered MoS2 grown on c ‐sapphire by pulsed laser deposition YT Ho, CH Ma, TT Luong, LL Wei, TC Yen, WT Hsu, WH Chang, YC Chu, ... physica status solidi (RRL)–Rapid Research Letters 9 (3), 187-191, 2015 | 157 | 2015 |
| Layer‐Dependent Dielectric Function of Wafer‐Scale 2D MoS2 B Song, H Gu, M Fang, X Chen, H Jiang, R Wang, T Zhai, YT Ho, S Liu Advanced Optical Materials 7 (2), 1801250, 2019 | 79 | 2019 |
| High performance UV photodetector based on MoS2 layers grown by pulsed laser deposition technique S Kumar, A Sharma, YT Ho, A Pandey, M Tomar, AK Kapoor, EY Chang, ... Journal of Alloys and Compounds 835, 155222, 2020 | 47 | 2020 |
| Growth of nonpolar (112¯) ZnO films on LaAlO3 (001) substrates YT Ho, WL Wang, CY Peng, MH Liang, JS Tian, CW Lin, L Chang Applied Physics Letters 93 (12), 2008 | 41 | 2008 |
| Complex Optical Conductivity of Two-Dimensional MoS2: A Striking Layer Dependency B Song, H Gu, M Fang, YT Ho, X Chen, H Jiang, S Liu The Journal of Physical Chemistry Letters 10 (20), 6246-6252, 2019 | 40 | 2019 |
| RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface TT Luong, F Lumbantoruan, YY Chen, YT Ho, YC Weng, YC Lin, S Chang, ... Physica status solidi (a) 214 (7), 1600944, 2017 | 40 | 2017 |
| Growth of a-plane ZnO thin films on LaAlO3 (1 0 0) substrate by metal-organic chemical vapor deposition JS Tian, MH Liang, YT Ho, YA Liu, L Chang Journal of crystal growth 310 (4), 777-782, 2008 | 39 | 2008 |
| Atomic layer deposition of epitaxial ZnO on GaN and YSZ CW Lin, DJ Ke, YC Chao, L Chang, MH Liang, YT Ho Journal of crystal growth 298, 472-476, 2007 | 31 | 2007 |
| Efficiency improvement of InGaP/GaAs/Ge solar cells by hydrothermal-deposited ZnO nanotube structure CC Chung, BT Tran, KL Lin, YT Ho, HW Yu, NH Quan, EY Chang Nanoscale research letters 9, 1-5, 2014 | 23 | 2014 |
| Growth of ZnMgO/ZnO films on r-plane sapphires by pulsed laser deposition MH Liang, YT Ho, WL Wang, CY Peng, L Chang Journal of crystal growth 310 (7-9), 1847-1852, 2008 | 22 | 2008 |
| Growth and fabrication of AlGaN/GaN HEMT on SiC substrate YY Wong, YS Chiu, TT Luong, TM Lin, YT Ho, YC Lin, EY Chang 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE …, 2012 | 21 | 2012 |
| Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation TT Luong, BT Tran, YT Ho, MTH Ha, YL Hsiao, SC Liu, YS Chiu, ... Electronic Materials Letters 11, 217-224, 2015 | 20 | 2015 |
| Epitaxial single‐crystal of GaSe epilayers grown on ac‐sapphire substrate by molecular beam epitaxy CH Wu, CS Yang, YC Wang, HJ Huang, YT Ho, LL Wei, EY Chang physica status solidi (a) 212 (10), 2201-2204, 2015 | 18 | 2015 |
| The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency CC Chung, BT Tran, HV Han, YT Ho, HW Yu, KL Lin, HQ Nguyen, P Yu, ... Electronic Materials Letters 10, 457-460, 2014 | 17 | 2014 |
| Growth of epitaxial ZnO thin film on yttria-stabilized zirconia single-crystal substrate YC Chao, CW Lin, DJ Ke, YH Wu, HG Chen, L Chang, YT Ho, MH Liang Journal of crystal growth 298, 461-463, 2007 | 17 | 2007 |
| Epitaxy of m ‐plane ZnO on (112) LaAlO3 substrate YT Ho, WL Wang, CY Peng, WC Chen, MH Liang, JS Tian, L Chang physica status solidi (RRL)–Rapid Research Letters 3 (4), 109-111, 2009 | 16 | 2009 |
| 2D Niobium-Doped MoS2: Tuning the Exciton Transitions and Potential Applications B Song, H Gu, M Fang, Z Guo, YT Ho, X Chen, H Jiang, S Liu ACS Applied Electronic Materials 3 (6), 2564-2572, 2021 | 15 | 2021 |
| Non-polar a-plane GaN grown on LaAlO3 (0 0 1) substrate by pulsed laser deposition YT Ho, MH Liang, FK Hsiao, WL Wang, CY Peng, WD Chen, WI Lee, ... Journal of crystal growth 310 (7-9), 1614-1618, 2008 | 15 | 2008 |
| Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD TT Luong, YT Ho, YY Wong, S Chang, EY Chang Microelectronics Reliability 83, 286-292, 2018 | 14 | 2018 |
| Barrier Strain and Carbon Incorporation‐Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors** TT Luong, YT Ho, BT Tran, YY Woong, EY Chang Chemical Vapor Deposition 21 (1-2-3), 33-40, 2015 | 14 | 2015 |
