| SiC Schottky diodes for harsh environment space applications P Godignon, X Jordà, M Vellvehi, X Perpina, V Banu, D López, J Barbero, ... IEEE Transactions on Industrial Electronics 58 (7), 2582-2590, 2010 | 113 | 2010 |
| Thermomechanical assessment of die-attach materials for wide bandgap semiconductor devices and harsh environment applications LA Navarro, X Perpina, P Godignon, J Montserrat, V Banu, M Vellvehi, ... IEEE transactions on Power Electronics 29 (5), 2261-2271, 2013 | 109 | 2013 |
| Short-circuit study in medium-voltage GaN cascodes, p-GaN HEMTs, and GaN MISHEMTs M Fernández, X Perpiñà, J Roig-Guitart, M Vellvehi, F Bauwens, M Tack, ... IEEE Transactions on Industrial Electronics 64 (11), 9012-9022, 2017 | 90 | 2017 |
| SiC integrated circuit control electronics for high-temperature operation M Alexandru, V Banu, X Jordà, J Montserrat, M Vellvehi, D Tournier, ... IEEE Transactions on Industrial Electronics 62 (5), 3182-3191, 2014 | 82 | 2014 |
| Irradiance-based emissivity correction in infrared thermography for electronic applications M Vellvehi, X Perpiñà, GL Lauro, F Perillo, X Jordà Review of scientific instruments 82 (11), 2011 | 73 | 2011 |
| Long-term reliability of railway power inverters cooled by heat-pipe-based systems X Perpina, X Jorda, M Vellvehi, J Rebollo, M Mermet-Guyennet IEEE transactions on industrial electronics 58 (7), 2662-2672, 2010 | 63 | 2010 |
| P-GaN HEMTs drain and gate current analysis under short-circuit M Fernández, X Perpiñà, J Roig, M Vellvehi, F Bauwens, X Jordà, M Tack IEEE Electron Device Letters 38 (4), 505-508, 2017 | 59 | 2017 |
| Origin of large negative electrocaloric effect in antiferroelectric P Vales-Castro, R Faye, M Vellvehi, Y Nouchokgwe, X Perpiñà, ... Physical Review B 103 (5), 054112, 2021 | 48 | 2021 |
| Study of novel techniques for reducing self-heating effects in SOI power LDMOS J Roig, D Flores, S Hidalgo, M Vellvehi, J Rebollo, J Millán Solid-State Electronics 46 (12), 2123-2133, 2002 | 38 | 2002 |
| CPT1C in the ventromedial nucleus of the hypothalamus is necessary for brown fat thermogenesis activation in obesity R Rodríguez-Rodríguez, C Miralpeix, A Fosch, M Pozo, ... Molecular metabolism 19, 75-85, 2019 | 37 | 2019 |
| Thermal resistance investigations on new leadframe-based LED packages and boards B Pardo, A Gasse, A Fargeix, J Jakovenko, RJ Werkhoven, X Perpiñà, ... Microelectronics Reliability 53 (8), 1084-1094, 2013 | 36 | 2013 |
| Bipolar conduction impact on electrical characteristics and reliability of 1.2-and 3.5-kV 4H-SiC JBS diodes P Brosselard, N Camara, V Banu, X Jordà, M Vellvehi, P Godignon, ... IEEE Transactions on Electron Devices 55 (8), 1847-1856, 2008 | 36 | 2008 |
| Internal infrared laser deflection system: a tool for power device characterization X Perpiñà, X Jordà, N Mestres, M Vellvehi, P Godignon, J Millán, ... Measurement Science and Technology 15 (5), 1011, 2004 | 33 | 2004 |
| Reduced-order thermal behavioral model based on diffusive representation B Allard, X Jorda, P Bidan, A Rumeau, H Morel, X Perpina, M Vellvehi, ... IEEE Transactions on Power Electronics 24 (12), 2833-2846, 2009 | 31 | 2009 |
| Coupled electro-thermal simulation of a DC/DC converter M Vellvehi, X Jordà, P Godignon, C Ferrer, J Millán Microelectronics Reliability 47 (12), 2114-2121, 2007 | 31 | 2007 |
| Analysis of 1.2 kV JBS rectifiers fabricated in 4H-SiC R Perez, N Mestres, M Vellvehi, P Godignon, J Millan Semiconductor science and technology 21 (5), 670, 2006 | 30 | 2006 |
| Channeling implantations of into 6H silicon carbide E Morvan, P Godignon, M Vellvehi, A Hallén, M Linnarsson, ... Applied physics letters 74 (26), 3990-3992, 1999 | 30 | 1999 |
| Reduction of self-heating effect on SOIM devices J Roig, D Flores, M Vellvehí, J Rebollo, J Millan Microelectronics Reliability 42 (1), 61-66, 2002 | 27 | 2002 |
| Thermal cycling analysis of high temperature die-attach materials LA Navarro, X Perpiñà, M Vellvehí, V Banu, X Jordà Microelectronics Reliability 52 (9-10), 2314-2320, 2012 | 25 | 2012 |
| Power-substrate static thermal characterization based on a test chip X Jorda, X Perpina, M Vellvehi, J Coleto IEEE Transactions on Device and Materials reliability 8 (4), 671-679, 2008 | 25 | 2008 |
