| Evolution of Shape, Size, and Areal Density of a Single Plane of Si Nanocrystals Embedded in SiO 2 Matrix Studied by Atom Probe Tomography B Han, Y Shimizu, G Seguini, E Arduca, C Castro, GB Assayag, K Inoue, ... RSC Advances 6, 3617-3622, 2015 | 124* | 2015 |
| Doping of silicon nanocrystals E Arduca, M Perego Materials Science in Semiconductor Processing 62, 156-170, 2017 | 44 | 2017 |
| Thermodynamic stability of high phosphorus concentration in silicon nanostructures M Perego, G Seguini, E Arduca, J Frascaroli, D De Salvador, ... Nanoscale 7 (34), 14469-14475, 2015 | 40 | 2015 |
| Control of Doping Level in Semiconductors via Self-Limited Grafting of Phosphorus End-Terminated Polymers M Perego, G Seguini, E Arduca, A Nomellini, K Sparnacci, D Antonioli, ... ACS nano 12 (1), 178-186, 2018 | 37 | 2018 |
| Synthesis and characterization of P δ-layer in SiO2 by monolayer doping E Arduca, M Mastromatteo, D De Salvador, G Seguini, C Lenardi, ... Nanotechnology 27 (7), 075606, 2016 | 37 | 2016 |
| Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide M Mastromatteo, E Arduca, E Napolitani, G Nicotra, D De Salvador, ... Surface and Interface Analysis 46 (S1), 393-396, 2014 | 25 | 2014 |
| Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants M Perego, F Caruso, G Seguini, E Arduca, R Mantovan, K Sparnacci, ... Journal of Materials Chemistry C 8 (30), 10229-10237, 2020 | 20 | 2020 |
| Modeling of phosphorus diffusion in silicon oxide and incorporation in silicon nanocrystals M Mastromatteo, D De Salvador, E Napolitani, E Arduca, G Seguini, ... Journal of Materials Chemistry C 4 (16), 3531-3539, 2016 | 15 | 2016 |
| Engineering of the spin on dopant process on silicon on insulator substrate C Barri, E Mafakheri, L Fagiani, G Tavani, A Barzaghi, D Chrastina, ... Nanotechnology 32 (2), 025303, 2020 | 12 | 2020 |
| Doping of silicon with phosphorus end-terminated polymers: source characterization and dopant diffusion in SiO 2 M Perego, G Seguini, E Mascheroni, E Arduca, V Gianotti, M Laus Journal of Materials Chemistry C 9 (11), 4020-4028, 2021 | 8 | 2021 |
| Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO 2 E Arduca, G Seguini, C Martella, A Lamperti, E Napolitani, D De Salvador, ... Journal of Materials Chemistry C 6 (1), 119-126, 2018 | 8 | 2018 |
| Toward Deterministic Doping of Silicon via Dopant Containing Homopolymer M Perego, G Seguini, E Arduca, A Nomellini, F Caruso, K Sparnacci, ... Bulletin of the American Physical Society 65, 2020 | | 2020 |
| Deterministic doping via self-limited grafting of phosphorus end-terminated polymers R Chiarcos, D Antonioli, V Gianotti, K Sparnacci, M Laus, G Seguini, ... AIP Conference Proceedings 1981 (1), 2018 | | 2018 |
| Boron-terminated polystyrene as potential spin-on dopant for microelectronic applications C Aliberti, D Antonioli, K Sparnacci, V Gianotti, M Laus, G Paleari, ... AIP Conference Proceedings 1981 (1), 2018 | | 2018 |
| EX SITU DOPING OF SILICON NANOSTRUCTURES E Arduca Università degli Studi di Milano, 2017 | | 2017 |
| Three-Dimensional Analysis of Phosphorus-Doped Si Nanocrystals Embedded in SiO2 Matrix by Atom Probe Tomography Y Shimizu, B Han, G Seguini, E Arduca, C Castro, GB Assayag, K Inoue, ... JSAP Annual Meetings Extended Abstracts The 77th JSAP Autumn Meeting 2016 …, 2016 | | 2016 |
| Characterization of Si Nanocrystals Embedded in SiO2 Matrix by Atom Probe Tomography B Han, Y Shimizu, G Seguini, E Arduca, C Castro, G Benassayag, K Inoue, ... EMN Meeting on Nanocrystals, 2016 | | 2016 |
| 15a-P9-17 Y Shimizu, B Han, G Seguini, E Arduca, C Castro, GB Assayag, K Inoue, ... | | |
