关注
Omar Elleuch
Omar Elleuch
ASM America
在 wisc.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Radiation-induced segregation in a ceramic
X Wang, H Zhang, T Baba, H Jiang, C Liu, Y Guan, O Elleuch, T Kuech, ...
Nature Materials 19 (9), 992-998, 2020
772020
Phase Selection and Structure of Low-Defect-Density γ-Al2O3 Created by Epitaxial Crystallization of Amorphous Al2O3
R Liu, O Elleuch, Z Wan, P Zuo, TD Janicki, AD Alfieri, SE Babcock, ...
ACS Applied Materials & Interfaces 12 (51), 57598-57608, 2020
212020
Inhomogeneous nitrogen incorporation effects on the transport properties of GaAsN grown by CBE
L Wang, O Elleuch, Y Shirahata, N Kojima, Y Ohshita, M Yamaguchi
Journal of Crystal Growth 437, 6-9, 2016
112016
Reconfiguration of amorphous complex oxides: A route to a broad range of assembly phenomena, hybrid materials, and novel functionalities
DJ Prakash, Y Chen, ML Debasu, DE Savage, C Tangpatjaroen, ...
Small 18 (1), 2105424, 2022
82022
High-Ge-content SiGe alloy single crystals using the nanomembrane platform
A Bhat, O Elleuch, X Cui, Y Guan, SA Scott, TF Kuech, MG Lagally
ACS applied materials & interfaces 12 (18), 20859-20866, 2020
82020
Highly tin doped GaAs at low growth temperatures using tetraethyl tin by metal organic vapor phase epitaxy
O Elleuch, K Lekhal, Y Guan, TF Kuech
Journal of Crystal Growth 507, 255-259, 2019
42019
Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy
O Elleuch, L Wang, KH Lee, K Demizu, K Ikeda, N Kojima, Y Ohshita, ...
Journal of Applied Physics 117 (4), 2015
42015
Analysis of the main acceptor defect in p-type GaAsN grown by chemical beam epitaxy
O Elleuch, B Bouzazi, H Kowaki, K Ikeda, N Kojima, Y Ohshita, ...
Japanese Journal of Applied Physics 53 (9), 091201, 2014
42014
Pypvcell: An open-source solar cell modeling library in Python
KH Lee, K Araki, O Elleuch, N Kojima, M Yamaguchi
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 359-362, 2017
32017
N–H related defect playing the role of acceptor in GaAsN grown by chemical beam epitaxy
O Elleuch, L Wang, KH Lee, K Ikeda, N Kojima, Y Ohshita, M Yamaguchi
Journal of Crystal Growth 468, 581-584, 2017
32017
Identification of N–H related acceptor defects in GaAsN grown by chemical beam epitaxy using hydrogen isotopes
O Elleuch, L Wang, KH Lee, K Ikeda, N Kojima, Y Ohshita, M Yamaguchi
Journal of Alloys and Compounds 649, 815-818, 2015
32015
Prospect of InGaAsN solar cells grown by chemical beam epitaxy for high-efficiency multi-junction solar cells
KH Lee, O Elleuch, K Ikeda, L Wang, K Demizu, N Kojima, Y Ohshita, ...
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd, 2015
22015
Double acceptor in p-type GaAsN grown by chemical beam epitaxy
O Elleuch, L Wang, KH Lee, K Ikeda, N Kojima, Y Ohshita, M Yamaguchi
Journal of Crystal Growth 432, 45-48, 2015
12015
Simulation analysis of the potential causes for the low Jsc in GaAsN solar cells
L Wang, O Elleuch, N Kojima, Y Ohshita, M Yamaguchi
12014
Material layer deposition methods, material layer stacks, semiconductor processing systems, and related computer program products
O Elleuch, Y Lu, C Miskin, A Demos
US Patent App. 18/535,715, 2024
2024
Method of forming silicon within a gap on a surface of a substrate
O Elleuch, R James, P Westrom, C Miskin, A Demos
US Patent App. 18/212,827, 2023
2023
Method and wafer processing furnace for forming an epitaxial stack on a plurality of substrates
S Van Aerde, W Verweij, B Jongbloed, D Pierreux, K Houben, R Khazaka, ...
US Patent App. 18/153,272, 2023
2023
Forming structures with bottom-up fill techniques
C Miskin, O Elleuch, P Westrom, R Khazaka, Q Xie, A Demos
US Patent App. 17/850,370, 2023
2023
Phase Selection and Structure of Low-Defect-Density γ-Al₂O₃ Created by Epitaxial Crystallization of Amorphous Al₂O₃
R Liu, O Elleuch, Z Wan, P Zuo, TD Janicki, AD Alfieri, SE Babcock, ...
2020
EFFECT OF (IN)GAASN BUFFER LAYER ON DISLOCATION DENSITY FOR LATTICE-MISMATCHED HETERO-EPITAXIAL (IN)GAAS FILM
O Elleuch, W Yu-Cian, K Nobuaki, Y Ohshita, M Yamaguchi
The 27th International Photovoltaic Science and Engineering Conference, 2017
2017
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