| Ultra-Low Power Robust 3bit/cell Hf0.5Zr0.5O2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology S De, D Lu, HH Le, S Mazumder, YJ Lee, WC Tseng, BH Qiu, MA Baig, ... 2021 Symposia on VLSI Technology and Circuits, 2021 | 73 | 2021 |
| Uniform Crystal Formation and Electrical Variability Reduction in Hafnium-Oxide-Based Ferroelectric Memory by Thermal Engineering S De, BH Qiu, WX Bu, MA Baig, PJ Sung, CJ Su, YJ Lee, DD Lu ACS Applied Electronic Materials 3 (2), 619-628, 2021 | 52 | 2021 |
| Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications S De, A Baig, BH Qiu, F Müller, HH Le, M Lederer, T Kämpfe, T Ali, ... Frontiers in Nanotechnology, Emerging Neuromorphic Electronics and Materials …, 2021 | 49 | 2021 |
| READ-Optimized 28nm HKMG Multi-bit FeFET Synapses for Inference-Engine Applications S De, F Müller, HH Le, M Lederer, R Yannick, T Ali, D Lu, T Kämpfe IEEE Journal of the Electron Devices Society, 2022 | 37 | 2022 |
| Robust binary neural network operation from 233 K to 398 K via gate stack and bias optimization of ferroelectric FinFET synapses S De, HH Le, BH Qiu, MA Baig, PJ Sung, CJ Su, YJ Lee, DD Lu IEEE Electron Device Letters 42 (8), 1144-1147, 2021 | 33 | 2021 |
| Computationally efficient compact model for ferroelectric field-effect transistors to simulate the online training of neural networks DD Lu, S De, MA Baig, BH Qiu, YJ Lee Semiconductor Science and Technology 35 (9), 095007, 2020 | 31 | 2020 |
| Demonstration of multiply-accumulate operation with 28 nm fefet crossbar array S De, F Mueller, N Laleni, M Lederer, Y Raffel, S Mojumder, A Vardar, ... IEEE Electron Device Letters 43 (12), 2081-2084, 2022 | 30 | 2022 |
| 28 nm HKMG-based current limited FeFET crossbar-array for inference application S De, F Müller, S Thunder, S Abdulazhanov, N Laleni, M Lederer, T Ali, ... IEEE Transactions on Electron Devices 69 (12), 7194-7198, 2022 | 29 | 2022 |
| Neuromorphic Computing with Fe-FinFETs in the Presence of Variation S De, A Baig, BH Qiu, HH Le, YJ Lee, D Lu The 2022 International Symposium on VLSI Technology, Systems and …, 2022 | 26 | 2022 |
| A Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimisation in HfO2-Based FeFETs for In-Memory-Computing Applications Y Raffel, S De, M Lederer, R Olivo, R Hoffmann, S Thunder, Pirro, ... ACS Applied Electronics Material, 2022 | 23 | 2022 |
| Tri-Gate Ferroelectric FET Characterization and Modelling for Online Training of Neural Networks at Room Temperature and 233K S De, A Baig, BH Qiu, D Lu, PJ Sung, FK Hsueh, YJ Lee, CJ Su Device Research Conference, 2020 | 22 | 2020 |
| Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack MA Baig, HH Le, S De, CW Chang, CC Hsieh, XS Huang, YJ Lee, DD Lu Semiconductor Science and Technology 37 (2), 024001, 2021 | 19 | 2021 |
| Alleviation of Charge Trapping and Flicker Noise in HfZrO2-Based Ferroelectric Capacitors by Thermal Engineering S De, WX Bu, BH Qiu, CJ Su, YJ Lee, DD Lu The 2021 International Symposium on VLSI Technology, Systems and …, 2021 | 19 | 2021 |
| Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications Y Raffel, S Thunder, L Maximilian, R Olivo, R Hoffmann, L Pirro, S Beyer, ... International Conference on IC Design and Technology, 2022, 2022 | 17 | 2022 |
| Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability T Ali, R Olivo, S Kerdiles, D Lehninger, M Lederer, S De, AS Royet, ... International Memory Workshop (IMW), 2022 | 16 | 2022 |
| Neuromorphic computing with deeply scaled ferroelectric FinFET in presence of process variation, device aging and flicker noise S De, BH Qiu, WX Bu, M Baig, CJ Su, YJ Lee, D Lu arXiv preprint arXiv:2103.13302, 2021 | 16* | 2021 |
| Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications TK Sourav De, Maximilian Lederer, Yannick Raffel, Franz Müller, Konrad Seidel International SoC Design Conference (ISOCC), 2022 | 14 | 2022 |
| Ferroelectric Content Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation MSK Rana, S Thunder, D Lehninger, M Lederer, Y Raffel, M P M Jank, ... ACS Applied Electronics Material, 2023 | 13 | 2023 |
| SPICE compatible semi-empirical compact model for ferroelectric hysteresis M Lederer, R Olivo, N Yadav, S De, K Seidel, LM Eng, T Kämpfe Solid-State Electronics 199, 108501, 2023 | 13 | 2023 |
| Multilevel operation of ferroelectric fet memory arrays considering current percolation paths impacting switching behavior F Müller, S De, R Olivo, M Lederer, A Altawil, R Hoffmann, T Kämpfe, T Ali, ... IEEE Electron Device Letters 44 (5), 757-760, 2023 | 12 | 2023 |
Yannick RaffelFraunhofer IPMS CNT在 ipms.fraunhofer.de 的电子邮件经过验证
