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Zhengliang Bian
Zhengliang Bian
在 stanford.edu 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Black phosphorus: degradation favors lubrication
S Wu, F He, G Xie, Z Bian, J Luo, S Wen
Nano letters 18 (9), 5618-5627, 2018
1322018
Super-slippery degraded black phosphorus/silicon dioxide interface
S Wu, F He, G Xie, Z Bian, Y Ren, X Liu, H Yang, D Guo, L Zhang, S Wen, ...
ACS applied materials & interfaces 12 (6), 7717-7726, 2020
552020
Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer
K Zeng, R Soman, Z Bian, S Jeong, S Chowdhury
IEEE Electron Device Letters 43 (9), 1527-1530, 2022
322022
2.8 kV avalanche in vertical GaN PN diode utilizing field plate on hydrogen passivated P-layer
Z Bian, K Zeng, S Chowdhury
IEEE Electron Device Letters 43 (4), 596-599, 2022
262022
In‐Plane Potential Gradient Induces Low Frictional Energy Dissipation during the Stick‐Slip Sliding on the Surfaces of 2D Materials
F He, X Yang, Z Bian, G Xie, D Guo, J Luo
Small 15 (49), 1904613, 2019
242019
Temperature effect on mechanical strength and frictional properties of polytetrafluoroethylene‐based core‐shell nanocomposites
Z Bian, L Zhang, S Wu, F He, F Zhang, J Pan, G Xie
Journal of Applied Polymer Science 138 (9), 49929, 2021
92021
Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs
X Zhou, M Malakoutian, R Soman, Z Bian, RP Martinez, S Chowdhury
IEEE Transactions on Electron Devices 69 (12), 6650-6655, 2022
72022
Study of avalanche behavior in 3 kV GaN vertical PN diode under UIS stress for edge-termination optimization
B Shankar, Z Bian, K Zeng, C Meng, RP Martinez, S Chowdhury, ...
2022 IEEE International Reliability Physics Symposium (IRPS), 2B. 2-1-2B. 2-4, 2022
72022
From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
K Woo, Z Bian, M Noshin, RP Martinez, M Malakoutian, B Shankar, ...
Journal of Physics: Materials 7 (2), 022003, 2024
52024
A discussion on various experimental methods of impact ionization coefficient measurement in GaN
D Ji, K Zeng, Z Bian, B Shankar, BP Gunning, A Binder, JR Dickerson, ...
AIP Advances 12 (3), 2022
52022
Control of Schottky barrier height in diamond using UV-generated ozone and its effect on barrier inhomogeneity and temperature dependent properties
K Woo, M Malakoutian, D Saraswat, Z Bian, A Hardy, M Muehle, ...
Diamond and Related Materials 145, 111059, 2024
42024
Demonstration of millimeter-wave GaN IMPATT oscillator at Ka-band
Z Bian, A Marshall, C Pao, T Lee, S Chowdhury
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
22023
Compact Model Parameter Extraction via Derivative-Free Optimization
RP Martinez, M Iwamoto, K Woo, Z Bian, R Tinti, S Boyd, S Chowdhury
arXiv preprint arXiv:2406.16355, 2024
12024
(Invited) Breakdown Improvement of Mg-Diffused Current Blocking Layer in Ga2O3
K Zeng, Z Bian, S Chowdhury
Electrochemical Society Meeting Abstracts 245, 1563-1563, 2024
2024
Compact Model Parameter Extraction via Derivative-Free Optimization
R Perez Martinez, M Iwamoto, K Woo, Z Bian, R Tinti, S Boyd, ...
arXiv e-prints, arXiv: 2406.16355, 2024
2024
Simultaneous drive-in of Mg and disassociation of Mg-H complex in Ga2O3 by oxygen annealing achieving remarkable current blocking
K Zeng, Z Bian, N Sinha, S Chowdhury
Applied Physics Letters 124 (21), 2024
2024
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