| Strain-Balanced GezSn1-z-SixGeySn1-xy Multiple-Quantum-Well Lasers GE Chang, SW Chang, SL Chuang IEEE journal of quantum electronics 46 (11-12), 1813-1820, 2010 | 239* | 2010 |
| GeSn-based pin photodiodes with strained active layer on a Si wafer HH Tseng, H Li, V Mashanov, YJ Yang, HH Cheng, GE Chang, RA Soref, ... Applied Physics Letters 103 (23), 231907, 2013 | 168 | 2013 |
| GeSn pin waveguide photodetectors on silicon substrates YH Peng, HH Cheng, VI Mashanov, GE Chang Applied Physics Letters 105 (23), 231109, 2014 | 104 | 2014 |
| Theory for n-type doped, tensile-strained Ge–Si x Ge y Sn 1− x− y quantum-well lasers at telecom wavelength GE Chang, SW Chang, SL Chuang Optics Express 17 (14), 11246-11258, 2009 | 89 | 2009 |
| Sn-based waveguide pin photodetector with strained GeSn/Ge multiple-quantum-well active layer YH Huang, GE Chang, H Li, HH Cheng Optics Letters 42 (9), 1652-1655, 2017 | 88 | 2017 |
| Design and Modeling of GeSn-based Heterojunction Phototransistors for Communication Applications GE Chang, R Basu, B Mukhopadhyay, PK Basu IEEE Journal of Selected Topics in Quantum Electronics 22 (6), 8200409, 2016 | 83 | 2016 |
| Optical gain of germanium infrared lasers on different crystal orientations GE Chang, HH Cheng Journal of Physics D: Applied Physics 46 (6), 065103, 2013 | 59 | 2013 |
| GeSn resonant-cavity-enhanced photodetectors on silicon-on-insulator platforms BJ Huang, JH Lin, HH Cheng, GE Chang Optics letters 43 (6), 1215-1218, 2018 | 58 | 2018 |
| Electrically injected GeSn vertical-cavity surface emitters on silicon-on-insulator platforms BJ Huang, CY Chang, YD Hsieh, RA Soref, G Sun, HH Cheng, GE Chang ACS Photonics 6 (8), 1931-1938, 2019 | 54 | 2019 |
| In-plane free vibration of a single-crystal silicon ring CO Chang, GE Chang, CS Chou, WTC Chien, PC Chen International Journal of Solids and Structures 45 (24), 6114-6132, 2008 | 54 | 2008 |
| GeSn resonant-cavity-enhanced photodetectors for efficient photodetection at the 2 µm wavelength band CH Tsai, BJ Huang, RA Soref, G Sun, HH Cheng, GE Chang Optics Letters 45 (6), 1463-1466, 2020 | 47 | 2020 |
| Intensity-detection-based guided-mode-resonance optofluidic biosensing system for rapid, low-cost, label-free detection YC Lin, WH Hsieh, LK Chau, GE Chang Sensors and Actuators B: Chemical 250, 659-666, 2017 | 46 | 2017 |
| Microalgae living sensor for metal ion detection with nanocavity-enhanced photoelectrochemistry DN Roxby, H Rivy, C Gong, X Gong, Z Yuan, GE Chang, YC Chen Biosensors and Bioelectronics 165, 112420, 2020 | 41 | 2020 |
| Electrically injected GeSn lasers with peak wavelength up to 2.7 μm Y Zhou, S Ojo, CW Wu, Y Miao, H Tran, JM Grant, G Abernathy, S Amoah, ... Photonics Research 10 (1), 222-229, 2022 | 40 | 2022 |
| Enhanced sensitivity in injection-molded guided-mode-resonance sensors via low-index cavity layers YF Ku, HY Li, WH Hsieh, LK Chau, GE Chang Optics Express 23 (11), 14850-14859, 2015 | 38 | 2015 |
| Structural and optical characteristics of Ge 1− x Snx/Ge superlattices grown on Ge-buffered Si (001) wafers JZ Chen, H Li, HH Cheng, GE Chang Optical Materials Express 4 (6), 1178-1185, 2014 | 38 | 2014 |
| Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating base WT Hung, D Barshilia, R Basu, HH Cheng, GE Chang Optics Letters 45 (5), 1088-1091, 2020 | 35 | 2020 |
| GeSn lateral pin waveguide photodetectors for mid-infrared integrated photonics CH Tsai, KC Lin, CY Cheng, KC Lee, HH Cheng, GE Chang Optics Letters 46 (4), 864-867, 2021 | 33 | 2021 |
| Low-cost planar waveguide-based optofluidic sensor for real-time refractive index sensing D Barshilia, LK Chau, GE Chang Optics Express 28 (19), 27337-27345, 2020 | 33 | 2020 |
| Programmable Rainbow-Colored Optofluidic Fiber Laser Encoded with Topologically Structured Chiral Droplets C Wang, C Gong, Y Zhang, Z Qiao, Z Yuan, Y Gong, GE Chang, WC Tu, ... ACS nano 15 (7), 11126-11136, 2021 | 32 | 2021 |
Greg SunAPS and Optica Fellow, Professor of Engineering Department, UMass Boston在 umb.edu 的电子邮件经过验证
