| Polarization-matched GaInN∕ AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop MF Schubert, J Xu, JK Kim, EF Schubert, MH Kim, S Yoon, SM Lee, ... Applied physics letters 93 (4), 2008 | 604 | 2008 |
| Semiconductor optoelectronic device and method of fabricating the same J Son, HY Ryu, T Sakong, H Paek, S Lee US Patent 7,724,795, 2010 | 277 | 2010 |
| Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme SH Park, J Kim, H Jeon, T Sakong, SN Lee, S Chae, Y Park, CH Jeong, ... Applied Physics Letters 83 (11), 2121-2123, 2003 | 127 | 2003 |
| Characteristics of GaN‐based laser diodes for post‐DVD applications OH Nam, KH Ha, JS Kwak, SN Lee, KK Choi, TH Chang, SH Chae, ... physica status solidi (a) 201 (12), 2717-2720, 2004 | 119 | 2004 |
| High-power GaN-based blue-violet laser diodes with AlGaN∕ GaN multiquantum barriers SN Lee, SY Cho, HY Ryu, JK Son, HS Paek, T Sakong, T Jang, KK Choi, ... Applied physics letters 88 (11), 2006 | 100 | 2006 |
| Laser display device J Son, JW Lee, H Paek, S Lee, T Sakong US Patent App. 11/513,224, 2007 | 67 | 2007 |
| Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire SN Lee, HS Paek, JK Son, T Sakong, OH Nam, Y Park Journal of crystal growth 307 (2), 358-362, 2007 | 52 | 2007 |
| Highly stable temperature characteristics of InGaN blue laser diodes HY Ryu, KH Ha, SN Lee, T Jang, HK Kim, JH Chae, KS Kim, KK Choi, ... Applied physics letters 89 (3), 2006 | 52 | 2006 |
| Investigation of optical and electrical properties of Mg-doped p-InxGa1− xN, p-GaN and p-AlyGa1− yN grown by MOCVD SN Lee, JK Son, T Sakong, W Lee, H Paek, E Yoon, J Kim, YH Cho, ... Journal of crystal growth 272 (1-4), 455-459, 2004 | 46 | 2004 |
| Enhanced optical properties of InGaN MQWs with InGaN underlying layers JK Son, SN Lee, T Sakong, HS Paek, O Nam, Y Park, JS Hwang, JY Kim, ... Journal of crystal growth 287 (2), 558-561, 2006 | 43 | 2006 |
| Semiconductor optoelectronic device S Lee, K Ha, T Sakong US Patent 7,058,105, 2006 | 33 | 2006 |
| Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates JS Hwang, A Gokarna, YH Cho, JK Son, SN Lee, T Sakong, HS Paek, ... Applied physics letters 90 (13), 2007 | 32 | 2007 |
| High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers SN Lee, JK Son, HS Paek, YJ Sung, KS Kim, HK Kim, H Kim, T Sakong, ... Applied Physics Letters 93 (9), 2008 | 30 | 2008 |
| Semiconductor device and method of fabricating the same H Paek, T Sakong, J Son, S Lee US Patent App. 11/600,762, 2007 | 29 | 2007 |
| Characterization of optical and crystal qualities in InxGa1–xN/InyGa1–yN multi-quantum wells grown by MOCVD SN Lee, T Sakong, W Lee, H Paek, M Seon, IH Lee, O Nam, Y Park Journal of Crystal Growth 250 (1-2), 256-261, 2003 | 24 | 2003 |
| Semiconductor device having superlattice semiconductor layer and method of manufacturing the same W Lee, K Ha, J Kwak, H Paek, S Lee, T Sakong US Patent 6,992,318, 2006 | 21 | 2006 |
| Recent progress of high power GaN‐based violet laser diodes OH Nam, KH Ha, JS Kwak, SN Lee, KK Choi, TH Chang, SH Chae, ... physica status solidi (c), 2278-2282, 2003 | 21 | 2003 |
| Single-mode blue-violet laser diodes with low beam divergence and high COD level HY Ryu, KH Ha, SN Lee, KK Choi, T Jang, JK Son, JH Chae, SH Chae, ... IEEE photonics technology letters 18 (9), 1001-1003, 2006 | 20 | 2006 |
| Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates JS Hwang, A Gokarna, YH Cho, JK Son, SN Lee, T Sakong, HS Paek, ... Journal of applied physics 102 (1), 2007 | 19 | 2007 |
| High power AlInGaN-based blue-violet laser diodes OH Nam, KH Ha, HY Ryu, SN Lee, TH Chang, KK Choi, JK Son, JH Chae, ... Novel In-Plane Semiconductor Lasers V 6133, 137-145, 2006 | 19 | 2006 |
Sung-Nam LeeKorea Polytechnic University在 kpu.ac.kr 的电子邮件经过验证
