| Properties of In2O3 films obtained by thermal oxidation of sprayed In2S3 M Kraini, N Bouguila, I Halidou, A Timoumi, S Alaya Materials Science in Semiconductor Processing 16 (6), 1388-1396, 2013 | 66 | 2013 |
| Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy Z Chine, H Fitouri, I Zaied, A Rebey, B El Jani Semiconductor Science and Technology 25 (6), 065009, 2010 | 63 | 2010 |
| Effect of thermal annealing on structural and optical properties of the GaAs0. 963Bi0. 037 alloy I Moussa, H Fitouri, Z Chine, A Rebey, B El Jani Semiconductor science and technology 23 (12), 125034, 2008 | 56 | 2008 |
| Magnesium diffusion profile in GaN grown by MOVPE Z Benzarti, I Halidou, Z Bougrioua, T Boufaden, B El Jani Journal of crystal growth 310 (14), 3274-3277, 2008 | 48 | 2008 |
| Heavily silicon-doped GaN by MOVPE I Halidou, Z Benzarti, Z Chine, T Boufaden, B El Jani Microelectronics journal 32 (2), 137-142, 2001 | 41 | 2001 |
| Effect of SiN treatment on GaN epilayer quality Z Benzarti, I Halidou, T Boufaden, B El Jani, S Juillaguet, M Ramonda physica status solidi (a) 201 (3), 502-508, 2004 | 37 | 2004 |
| Structural, morphological and optical properties of annealed ZnS thin films deposited by spray technique N Bouguila, D Bchiri, M Kraini, A Timoumi, I Halidou, K Khirouni, S Alaya Journal of Materials Science: Materials in Electronics 26, 9845-9852, 2015 | 34 | 2015 |
| Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire A Bchetnia, A Touré, TA Lafford, Z Benzarti, I Halidou, MM Habchi, ... Journal of crystal growth 308 (2), 283-289, 2007 | 34 | 2007 |
| Stress and density of defects in Si‐doped GaN Z Chine, A Rebey, H Touati, E Goovaerts, M Oueslati, BE Jani, S Laugt physica status solidi (a) 203 (8), 1954-1961, 2006 | 34 | 2006 |
| Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment I Halidou, Z Benzarti, T Boufaden, B El Jani, S Juillaguet, M Ramonda Materials Science and Engineering: B 110 (3), 251-255, 2004 | 34 | 2004 |
| Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy Z Chine, H Fitouri, I Zaied, A Rebey, B El Jani Journal of crystal growth 330 (1), 35-38, 2011 | 30 | 2011 |
| Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE M Bouzidi, Z Benzarti, I Halidou, S Soltani, Z Chine, BEL Jani Materials Science in Semiconductor Processing 42, 273-276, 2016 | 29 | 2016 |
| Study of Optical and Electrical Properties of In2S3:Sn Films Deposited by Spray Pyrolysis M Kraini, N Bouguila, I Halidou, A Moadhen, C Vázquez-Vázquez, ... Journal of electronic materials 44, 2536-2543, 2015 | 28 | 2015 |
| Silicon effect on GaN surface morphology Z Benzarti, I Halidou, O Tottereau, T Boufaden, B El Jani Microelectronics journal 33 (11), 995-998, 2002 | 23 | 2002 |
| Thickness Effect on Properties of Sprayed In2S3 Films for Photovoltaic Applications N Bouguila, M Kraini, I Halidou, E Lacaze, H Bouchriha, H Bouzouita Journal of Electronic Materials 45, 829-838, 2016 | 22 | 2016 |
| Substrate temperature effect on properties of sprayed In2S3 films N Bouguila, M Kraini, A Timoumi, I Halidou, C Vázquez-Vázquez, ... Journal of Materials Science: Materials in Electronics 26, 7639-7648, 2015 | 22 | 2015 |
| Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate: optical properties evolution at different growth stages M Bouzidi, S Soltani, Z Chine, A Rebey, MK Shakfa optical materials 73, 252-259, 2017 | 19 | 2017 |
| Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE M Bouzidi, Z Benzarti, I Halidou, Z Chine, A Bchetnia, B El Jani Superlattices and Microstructures 84, 13-23, 2015 | 19 | 2015 |
| Annealing effect on GaN buffer layer surface I Halidou, T Boufaden, A Touhami, A Rebey, B El Jani physica status solidi (a) 184 (1), 263-271, 2001 | 17 | 2001 |
| Influence of annealing temperature on the properties of In2S3:Sn films deposited by spray pyrolysis M Kraini, N Bouguila, J El Ghoul, I Halidou, SA Gomez-Lopera, ... Journal of Materials Science: Materials in Electronics 26, 5774-5782, 2015 | 16 | 2015 |
