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Zhuoqun Wen
Zhuoqun Wen
在 umich.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Si doping of β-Ga2O3 by disilane via hybrid plasma-assisted molecular beam epitaxy
Z Wen, K Khan, X Zhai, E Ahmadi
Applied Physics Letters 122 (8), 2023
212023
Thermal stability of HVPE-grown (0001) α-Ga2O3 on sapphire template under vacuum and atmospheric environments
Z Wen, K Khan, K Sun, R Wellen, Y Oshima, E Ahmadi
Journal of Vacuum Science & Technology A 41 (4), 2023
122023
Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor
Z Wen, X Zhai, C Lee, S Kosanovic, Y Kim, AT Neal, T Asel, S Mou, ...
Applied Physics Letters 124 (12), 2024
62024
Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3
X Xia, JS Li, Z Wen, K Khan, MI Khan, E Ahmadi, Y Oshima, DC Hays, ...
Journal of Vacuum Science & Technology A 41 (2), 2023
62023
Investigation of ALD HfSiOx as gate dielectric on β-Ga2O3 (001)
X Zhai, Z Wen, O Odabasi, E Achamyeleh, K Sun, E Ahmadi
Applied Physics Letters 124 (13), 2024
42024
Chemical vapor growth of silicon phosphide nanostructures
Z Wen, Y Wang, Z Chen, J Shi
MRS advances 5, 1653-1660, 2020
32020
(010) β-(Alx, Ga1− x) 2O3 growth using tritertiarybutylaluminum as Al gas precursor via hybrid molecular beam epitaxy
Z Wen, X Zhai, K Khan, O Odabasi, M Kim, E Ahmadi
Applied Physics Letters 125 (16), 2024
22024
Diluted disilane as silicon source for uniform and controllable n-type doping of Ga2O3 via molecular beam epitaxy
E Ahmadi, Z Wen
Oxide-based Materials and Devices XV, PC128870D, 2024
2024
Investigation of Epitaxial Growth and Si Doping of?-(Al, Ga) 2O3 via Hybrid Molecular Beam Epitaxy
Z Wen
2024
Uniform and controlled Si doping of Ga2O3 by disilane via hybrid molecular beam epitaxy
Z Wen, E Ahmadi, K Khan
APS March Meeting Abstracts 2023, B41. 007, 2023
2023
1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA 2. Department of Electrical Engineering and Computer Science …
Z Wen, X Zhai, K Khan, O Odabasi, M Kim, E Ahmadi
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