| Raman and photoluminescence properties of un-/ion-doped β-Ga2O3 single-crystals prepared by edge-defined film-fed growth method K Zhang, Z Xu, S Zhang, H Wang, H Cheng, J Hao, J Wu, F Fang Physica B: Condensed Matter 600, 412624, 2021 | 35 | 2021 |
| MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing J Wu, Z Xu, L Liu, A Hartmaier, M Rommel, K Nordlund, T Wang, ... Journal of Materials Chemistry C 9 (7), 2258-2275, 2021 | 20 | 2021 |
| Molecular dynamics simulation of color centers in silicon carbide by helium and dual ion implantation and subsequent annealing Y Fan, Y Song, Z Xu, B Dong, J Wu, M Rommel, K Zhang, J Zhao, R Zhu, ... Ceramics International 47 (17), 24534-24544, 2021 | 15 | 2021 |
| MD simulation of two-temperature model in ion irradiation of 3C-SiC: Effects of electronic and nuclear stopping coupling, ion energy and crystal orientation J Wu, Z Xu, J Zhao, M Rommel, K Nordlund, F Ren, F Fang Journal of Nuclear Materials 557, 153313, 2021 | 13 | 2021 |
| Molecular dynamics simulation on the effect of dislocation structures on the retention and distribution of helium ions implanted into silicon L Ji, L Liu, Z Xu, Y Song, J Wu, R Li, F Fang Nanotechnology and Precision Engineering (NPE) 3 (2), 81-87, 2020 | 7 | 2020 |
| Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing Y Fan, Y Song, Z Xu, J Wu, R Zhu, Q Li, F Fang Nanotechnology 33 (12), 125701, 2021 | 6 | 2021 |
| Divacancy and silicon vacancy color centers in 4H-SiC fabricated by hydrogen and dual ions implantation and annealing T Sun, Z Xu, J Wu, Y Fan, F Ren, Y Song, L Yang, P Tan Ceramics International 49 (5), 7452-7465, 2023 | 4 | 2023 |
| Simulation of defect build-up in tungsten during low energy irradiation J Wu, F Granberg Journal of Nuclear Materials 586, 154653, 2023 | 3 | 2023 |
| Atomistic Study of Irradiation-Induced Plastic and Lattice Strain in Tungsten J Wu, DR Mason, F Granberg arXiv preprint arXiv:2310.12923, 2023 | | 2023 |
