| Efficient high-power laser diodes P Crump, G Erbert, H Wenzel, C Frevert, CM Schultz, KH Hasler, R Staske, ... IEEE Journal of Selected Topics in Quantum Electronics 19 (4), 1501211-1501211, 2013 | 243 | 2013 |
| Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert, G Tränkle New Journal of Physics 12 (8), 085007, 2010 | 127 | 2010 |
| 20W continuous wave reliable operation of 980nm broad-area single emitter diode lasers with an aperture of 96um P Crump, G Blume, K Paschke, R Staske, A Pietrzak, U Zeimer, S Einfeldt, ... High-Power Diode Laser Technology and Applications VII 7198, 315-323, 2009 | 118 | 2009 |
| Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers X Wang, P Crump, H Wenzel, A Liero, T Hoffmann, A Pietrzak, CM Schultz, ... IEEE Journal of Quantum Electronics 46 (5), 658-665, 2010 | 102 | 2010 |
| EuPRAXIA conceptual design report RW Assmann, MK Weikum, T Akhter, D Alesini, AS Alexandrova, ... The European Physical Journal Special Topics 229 (24), 3675-4284, 2020 | 95 | 2020 |
| Experimental and theoretical analysis of the dominant lateral waveguiding mechanism in 975 nm high power broad area diode lasers P Crump, S Böldicke, CM Schultz, H Ekhteraei, H Wenzel, G Erbert Semiconductor Science and Technology 27 (4), 045001, 2012 | 90 | 2012 |
| Comparative theoretical and experimental studies of two designs of high-power diode lasers KH Hasler, H Wenzel, P Crump, S Knigge, A Maasdorf, R Platz, R Staske, ... Semiconductor Science and Technology 29 (4), 045010, 2014 | 89 | 2014 |
| Combination of low-index quantum barrier and super large optical cavity designs for ultranarrow vertical far-fields from high-power broad-area lasers A Pietrzak, P Crump, H Wenzel, G Erbert, F Bugge, G Tränkle IEEE Journal of Selected Topics in Quantum Electronics 17 (6), 1715-1722, 2011 | 85 | 2011 |
| 100-W+ diode laser bars show> 71% power conversion from 790-nm to 1000-nm and have clear route to> 85% P Crump, W Dong, M Grimshaw, J Wang, S Patterson, D Wise, ... High-Power Diode Laser Technology and Applications V 6456, 193-203, 2007 | 79 | 2007 |
| High beam quality in broad area lasers via suppression of lateral carrier accumulation M Winterfeldt, P Crump, S Knigge, A Maaßdorf, U Zeimer, G Erbert IEEE Photonics Technology Letters 27 (17), 1809-1812, 2015 | 65 | 2015 |
| Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers M Winterfeldt, P Crump, H Wenzel, G Erbert, G Tränkle Journal of Applied Physics 116 (6), 2014 | 65 | 2014 |
| Growth and electrical transport properties of very high mobility two‐dimensional hole gases displaying persistent photoconductivity M Henini, PJ Rodgers, PA Crump, BL Gallagher, G Hill Applied physics letters 65 (16), 2054-2056, 1994 | 57 | 1994 |
| 975 nm high power diode lasers with high efficiency and narrow vertical far field enabled by low index quantum barriers P Crump, A Pietrzak, F Bugge, H Wenzel, G Erbert, G Tränkle Applied Physics Letters 96 (13), 2010 | 55 | 2010 |
| Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs T Kaul, G Erbert, A Maaßdorf, S Knigge, P Crump Semiconductor Science and technology 33 (3), 035005, 2018 | 46 | 2018 |
| 85% power conversion efficiency 975-nm broad area diode lasers at− 50 C, 76% at 10 C P Crump, M Grimshaw, J Wang, W Dong, S Zhang, S Das, J Farmer, ... 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics …, 2006 | 46 | 2006 |
| Impact of carrier nonpinning effect on thermal power saturation in GaAs-based high power diode lasers T Kaul, G Erbert, A Klehr, A Maaßdorf, D Martin, P Crump IEEE Journal of Selected Topics in Quantum Electronics 25 (6), 1-10, 2019 | 44 | 2019 |
| > 360 W and> 70% efficient GaAs-based diode lasers P Crump, J Wang, T Crum, S Das, M DeVito, W Dong, J Farmer, Y Feng, ... High-Power Diode Laser Technology and Applications III 5711, 21-29, 2005 | 44 | 2005 |
| 1060-nm Ridge Waveguide Lasers Based on Extremely Wide Waveguides for 1.3-W Continuous-Wave Emission Into a Single Mode With FWHM Divergence Angle of $9^{\circ}\times 6^{\circ} $ A Pietrzak, H Wenzel, P Crump, F Bugge, J Fricke, M Spreemann, ... IEEE Journal of Quantum Electronics 48 (5), 568-575, 2012 | 41 | 2012 |
| Progress in increasing the maximum achievable output power of broad area diode lasers P Crump, H Wenzel, G Erbert, G Tränkle High-Power Diode Laser Technology and Applications X 8241, 222-231, 2012 | 40 | 2012 |
| 11W broad area 976 nm DFB lasers with 58% power conversion efficiency CM Schultz, P Crump, H Wenzel, O Brox, A Maaßdorf, G Erbert, G Tränkle Electronics letters 46 (8), 580-581, 2010 | 40 | 2010 |
