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Jamal Aziz
Jamal Aziz
在 uni-wuppertal.de 的电子邮件经过验证 - 首页
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A review on two-dimensional (2D) magnetic materials and their potential applications in spintronics and spin-caloritronic
E Elahi, G Dastgeer, G Nazir, S Nisar, M Bashir, HA Qureshi, D Kim, J Aziz, ...
Computational Materials Science 213, 111670, 2022
502022
Stable and multilevel data storage resistive switching of organic bulk heterojunction
H Patil, H Kim, S Rehman, KD Kadam, J Aziz, MF Khan, D Kim
Nanomaterials 11 (2), 359, 2021
372021
Optimization of ZnO: PEIE as an electron transport layer for flexible organic solar cells
KD Kadam, H Kim, S Rehman, H Patil, J Aziz, TD Dongale, MF Khan, ...
Energy & Fuels 35 (15), 12416-12424, 2021
352021
Chemical Nature of Electrode and the Switching Response of RF-Sputtered NbOx Films
J Aziz, H Kim, S Rehman, MF Khan, D Kim
Nanomaterials 10 (11), 2164, 2020
322020
Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching
G Dastgeer, AM Afzal, J Aziz, S Hussain, SHA Jaffery, D Kim, M Imran, ...
Materials 14 (24), 7535, 2021
292021
Discrete memristive levels and logic gate applications of Nb2O5 devices
J Aziz, H Kim, S Rehman, KD Kadam, H Patil, S Aftab, MF Khan, D Kim
Journal of Alloys and Compounds 879, 160385, 2021
292021
Van der Waals multi‐heterostructures (PN, PIN, and NPN) for dynamic rectification in 2D materials
S Aftab, Samiya, HM Ul Haq, S Yousuf, MU Khan, Z Ahmed, J Aziz, ...
Advanced Materials Interfaces 7 (24), 2001479, 2020
272020
Flexible organic–inorganic halide perovskite-based diffusive memristor for artificial nociceptors
H Patil, H Kim, KD Kadam, S Rehman, SA Patil, J Aziz, TD Dongale, ...
ACS Applied Materials & Interfaces 15 (10), 13238-13248, 2023
252023
Current Rectification, Resistive Switching, and Stable NDR Effect in BaTiO3/CeO2 Heterostructure Devices
S Rehman, H Kim, H Patil, KD Kadam, RUR Sagar, J Aziz, DS Um, ...
Advanced Electronic Materials 7 (6), 2001237, 2021
222021
Enhanced and Passivated Co-doping Effect of Organic Molecule and Bromine on Graphene/HfO2/Silicon Metal–Insulator–Semiconductor (MIS) Schottky Junction …
KD Kadam, MA Rehman, H Kim, S Rehman, MA Khan, H Patil, J Aziz, ...
ACS Applied Energy Materials 5 (9), 10509-10517, 2022
192022
Lateral PIN (p-MoTe2/Intrinsic-MoTe2/n-MoTe2) Homojunction Photodiodes
S Aftab, HMS Ajmal, E Elahi, HM Mansoor Ul Haque, Samiya, MW Iqbal, ...
ACS Applied Nano Materials 5 (5), 6455-6462, 2022
192022
Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x= 2.0–2.5) films
J Aziz, H Kim, S Rehman, JH Hur, YH Song, MF Khan, D Kim
Materials Research Bulletin 144, 111492, 2021
192021
Power efficient transistors with low subthreshold swing using abrupt switching devices
J Aziz, H Kim, T Hussain, H Lee, T Choi, S Rehman, MF Khan, KD Kadam, ...
Nano Energy 95, 107060, 2022
172022
Compositional dynamics of the electron transport layer (ZnO: PEIE) in P3HT: PC61BM organic solar cells
KD Kadam, H Kim, S Rehman, H Patil, J Aziz, TD Dongale, MF Khan, ...
Materials Science in Semiconductor Processing 136, 106118, 2021
172021
Robust approach towards wearable power efficient transistors with low subthreshold swing
E Elahi, M Suleman, S Nisar, PR Sharma, MW Iqbal, SA Patil, H Kim, ...
Materials Today Physics 30, 100943, 2023
142023
Optically reconfigurable complementary logic gates enabled by bipolar photoresponse in gallium selenide memtransistor
S Rehman, MA Khan, H Kim, H Patil, J Aziz, KD Kadam, MA Rehman, ...
Advanced Science 10 (17), 2205383, 2023
122023
Effect of ALD Processes on Physical and Electrical Properties of HfO2 Dielectrics for the Surface Passivation of a CMOS Image Sensor Application
H Kim, VD Chavan, J Aziz, B Ko, JS Lee, J Rho, TD Dongale, KK Choi, ...
IEEE Access 10, 68724-68730, 2022
122022
Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and One Diode‐One Resistor Applications
J Aziz, H Kim, S Rehman, MF Khan, KD Kadam, H Patil, S Aftab, ...
Advanced Electronic Materials 8 (4), 2100961, 2022
102022
Effect of growth temperature on self-rectifying BaTiO3/ZnO heterojunction for high-density crossbar arrays and neuromorphic computing
H Patil, S Rehman, H Kim, KD Kadam, MA Khan, K Khan, J Aziz, M Ismail, ...
Journal of Colloid and Interface Science 652, 836-844, 2023
92023
Legal Memorandum: The Status of Jammu and Kashmir under International Law
AB Soofi, J Aziz, MO Anwar, A Malik, SA Khan
Research Society of International Law 7, 2019
72019
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