| First demonstration of four-finger N-polar GaN HEMT exhibiting record 712-mW output power with 31.7% PAE at 94 GHz E Akso, H Collins, C Clymore, W Li, M Guidry, B Romanczyk, C Wurm, ... IEEE Microwave and Wireless Technology Letters 33 (6), 683-686, 2023 | 20 | 2023 |
| GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and> 50 mA/mm on-current A Raj, A Krishna, N Hatui, B Romanczyk, C Wurm, M Guidry, R Hamwey, ... 2021 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2021 | 19 | 2021 |
| Demonstration of device-quality 60% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE C Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ... Journal of Applied Physics 131 (1), 2022 | 13 | 2022 |
| Schottky barrier gate N-polar GaN-on-Sapphire deep recess HEMT with record 10.5 dB linear gain and 50.2% PAE at 94 GHz E Akso, H Collins, K Khan, B Wang, W Li, C Clymore, E Kayede, W Liu, ... IEEE Microwave and Wireless Technology Letters, 2024 | 6 | 2024 |
| N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P at 94 GHz H Collins, E Akso, CJ Clymore, K Khan, R Hamwey, N Hatui, M Guidry, ... IEEE Microwave and Wireless Technology Letters, 2024 | 2 | 2024 |
| First demonstration of an N-polar InAlGaN/GaN HEMT R Hamwey, N Hatui, E Akso, F Wu, C Clymore, S Keller, JS Speck, ... IEEE Electron Device Letters, 2023 | 2 | 2023 |
| N-polar GaN MISHEMT with bias-insensitive linearity at 30 GHz H Collins, E Akso, N Hatui, CJ Clymore, C Wurm, R Hamwey, M Guidry, ... IEEE Microwave and Wireless Technology Letters, 2024 | 1 | 2024 |
| N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning H Collins, E Akso, CJ Clymore, K Khan, R Hamwey, N Hatui, M Guidry, ... Electronics Letters 60 (13), e13272, 2024 | | 2024 |
| N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization VR Muthuraj, W Liu, H Collins, W Li, R Hamwey, SP DenBaars, UK Mishra, ... Crystals 13 (4), 699, 2023 | | 2023 |
| Demonstration of device-quality InGaN grown on porous GaN tiles by MBE with an in-plane lattice constant equivalent to fully relaxed In0.12Ga0.88N C Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ... 2022 Compound Semiconductor Week (CSW), 1-2, 2022 | | 2022 |
