| Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates. M Zielinski, T Chassagne, S Roy, M Nemoz Journal of Applied Physics 105 (8), 2009 | 76 | 2009 |
| Comparison between polar (0001) and semipolar (1122) nitride blue–green light-emitting diodes grown on c-and m-plane sapphire substrates P De Mierry, T Guehne, M Nemoz, S Chenot, E Beraudo, G Nataf Japanese Journal of Applied Physics 48 (3R), 031002, 2009 | 72 | 2009 |
| Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN HPD Schenk, M Nemoz, M Korytov, P Vennéguès, AD Dräger, ... Applied Physics Letters 93 (8), 2008 | 64 | 2008 |
| Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching P De Mierry, N Kriouche, M Nemoz, S Chenot, G Nataf Applied Physics Letters 96 (23), 2010 | 63 | 2010 |
| Improved semipolar (112 2) GaN quality using asymmetric lateral epitaxy P De Mierry, N Kriouche, M Nemoz, G Nataf Applied Physics Letters 94 (19), 2009 | 59 | 2009 |
| Stacking faults blocking process in (1 1− 2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy N Kriouche, P Vennéguès, M Nemoz, G Nataf, P De Mierry Journal of crystal growth 312 (19), 2625-2630, 2010 | 58 | 2010 |
| Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing M Nemoz, R Dagher, S Matta, A Michon, P Vennéguès, J Brault Journal of Crystal Growth 461, 10-15, 2017 | 55 | 2017 |
| Band-edge photoluminescence and reflectivity of nonpolar and semipolar GaN formed by epitaxial lateral overgrowth on sapphire T Gühne, Z Bougrioua, S Laügt, M Nemoz, P Vennéguès, B Vinter, ... Physical Review B—Condensed Matter and Materials Physics 77 (7), 075308, 2008 | 38 | 2008 |
| Growth of GaN based structures on Si (1 1 0) by molecular beam epitaxy Y Cordier, JC Moreno, N Baron, E Frayssinet, JM Chauveau, M Nemoz, ... Journal of crystal growth 312 (19), 2683-2688, 2010 | 36 | 2010 |
| Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy M Khoury, M Leroux, M Nemoz, G Feuillet, J Zúñiga-Pérez, P Vennéguès Journal of Crystal Growth 419, 88-93, 2015 | 27 | 2015 |
| Blue light-emitting diodes grown on ZnO substrates Y Xia, J Brault, B Damilano, S Chenot, P Vennéguès, M Nemoz, ... Applied physics express 6 (4), 042101, 2013 | 24 | 2013 |
| Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE S Rennesson, M Leroux, M Al Khalfioui, M Nemoz, S Chenot, J Massies, ... physica status solidi (a) 215 (9), 1700640, 2018 | 20 | 2018 |
| Influence of the heterostructure design on the optical properties of GaN and Al0. 1Ga0. 9N quantum dots for ultraviolet emission S Matta, J Brault, TH Ngo, B Damilano, M Korytov, P Vennéguès, ... Journal of Applied Physics 122 (8), 2017 | 18 | 2017 |
| Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films Y Cordier, E Frayssinet, M Zielinski, T Chassagne, M Korytov, A Courville, ... Journal of crystal growth 398, 23-32, 2014 | 17 | 2014 |
| Built-in electric field in ZnO based semipolar quantum wells grown on (101¯ 2) ZnO substrates JM Chauveau, Y Xia, I Ben Taazaet-Belgacem, M Teisseire, B Roland, ... Applied Physics Letters 103 (26), 2013 | 17 | 2013 |
| Filtering of Defects in Semipolar (11− 22) GaN Using 2-Steps Lateral Epitaxial Overgrowth N Kriouche, M Leroux, P Vennéguès, M Nemoz, G Nataf, P de Mierry Nanoscale research letters 5 (12), 1878, 2010 | 15 | 2010 |
| Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode T Gühne, P DeMierry, M Nemoz, E Beraudo, S Chenot, G Nataf Electronics Letters 44 (3), 231-232, 2008 | 14 | 2008 |
| Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy M Nemoz, F Semond, S Rennesson, M Leroux, S Bouchoule, ... Superlattices and Microstructures 150, 106801, 2021 | 13 | 2021 |
| Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN C Elias, M Nemoz, H Rotella, F Georgi, S Vézian, M Hugues, Y Cordier APL Materials 11 (3), 2023 | 12 | 2023 |
| Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate R Elwaradi, J Mehta, TH Ngo, M Nemoz, C Bougerol, F Medjdoub, ... Journal of Applied Physics 133 (14), 2023 | 9 | 2023 |
