| Artificial synapses based on multiterminal memtransistors for neuromorphic application L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ... Advanced Functional Materials 29 (25), 1901106, 2019 | 231 | 2019 |
| A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy X Feng, Y Li, L Wang, S Chen, ZG Yu, WC Tan, N Macadam, G Hu, ... Advanced Electronic Materials 5 (12), 1900740, 2019 | 189 | 2019 |
| 2D photovoltaic devices: progress and prospects L Wang, L Huang, WC Tan, X Feng, L Chen, X Huang, KW Ang Small Methods 2 (3), 1700294, 2018 | 162 | 2018 |
| Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries Y Li, L Loh, S Li, L Chen, B Li, M Bosman, KW Ang Nature Electronics 4 (5), 348-356, 2021 | 152 | 2021 |
| Wafer‐scale 2D hafnium diselenide based memristor crossbar array for energy‐efficient neural network hardware S Li, ME Pam, Y Li, L Chen, YC Chien, X Fong, D Chi, KW Ang Advanced Materials 34 (25), 2103376, 2022 | 124 | 2022 |
| Self-selective multi-terminal memtransistor crossbar array for in-memory computing X Feng, S Li, SL Wong, S Tong, L Chen, P Zhang, L Wang, X Fong, D Chi, ... ACS nano 15 (1), 1764-1774, 2021 | 99 | 2021 |
| High mobility anisotropic black phosphorus nanoribbon field‐effect transistor X Feng, X Huang, L Chen, WC Tan, L Wang, KW Ang Advanced Functional Materials 28 (28), 1801524, 2018 | 92 | 2018 |
| A van der Waals Synaptic Transistor Based on Ferroelectric Hf0. 5Zr0. 5O2 and 2D Tungsten Disulfide L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ... Advanced Electronic Materials, 2000057, 2020 | 81 | 2020 |
| Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition L Wang, L Chen, SL Wong, X Huang, W Liao, C Zhu, YF Lim, D Li, X Liu, ... Advanced Electronic Materials, 1900393, 2019 | 78 | 2019 |
| An Electronic Synapse Based on 2D Ferroelectric CuInP2S6 B Li, S Li, H Wang, L Chen, L Liu, X Feng, Y Li, J Chen, X Gong, KW Ang Advanced Electronic Materials 6 (12), 2000760, 2020 | 74 | 2020 |
| Black phosphorus carbide as a tunable anisotropic plasmonic metasurface X Huang, Y Cai, X Feng, WC Tan, DMN Hasan, L Chen, N Chen, L Wang, ... ACS photonics 5 (8), 3116-3123, 2018 | 63 | 2018 |
| Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing S Li, B Li, X Feng, L Chen, Y Li, L Huang, X Fong, KW Ang npj 2D Materials and Applications 5 (1), 1, 2021 | 49 | 2021 |
| Fabry-Perot cavity enhanced light-matter interactions in two-dimensional van der Waals heterostructure X Huang, X Feng, L Chen, L Wang, WC Tan, L Huang, KW Ang Nano Energy 62, 667-673, 2019 | 39 | 2019 |
| Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high performance complementary circuits W Liao, L Wang, L Chen, W Wei, Z Zeng, X Feng, L Huang, WC Tan, ... Nanoscale 10 (36), 17007-17014, 2018 | 38 | 2018 |
| Recent Advances in Black Phosphorus‐Based Electronic Devices WC Tan, L Wang, X Feng, L Chen, L Huang, X Huang, KW Ang Advanced Electronic Materials 5 (2), 1800666, 2019 | 36 | 2019 |
| Ultrasensitive and robust two-dimensional indium selenide flexible electronics and sensors for human motion detection L Chen, ZG Yu, D Liang, S Li, WC Tan, YW Zhang, KW Ang Nano Energy 76, 105020, 2020 | 31 | 2020 |
| Gate‐Defined Quantum Confinement in CVD 2D WS2 CS Lau, JY Chee, L Cao, ZE Ooi, SW Tong, M Bosman, F Bussolotti, ... Advanced Materials 34 (25), 2103907, 2022 | 29 | 2022 |
| Ferroelectric memory based on two-dimensional materials for neuromorphic computing L Chen, ME Pam, S Li, KW Ang Neuromorphic Computing and Engineering 2 (2), 022001, 2022 | 28 | 2022 |
| Multiscale Modeling of Al0.7Sc0.3N-based FeRAM: the Steep Switching, Leakage and Selector-free Array C Liu, Q Wang, W Yang, T Cao, L Chen, M Li, F Liu, DK Loke, J Kang, ... 2021 IEEE International Electron Devices Meeting (IEDM), 8.1. 1-8.1. 4, 2021 | 27 | 2021 |
| Gigahertz integrated circuits based on complementary black phosphorus transistors L Chen, S Li, X Feng, L Wang, X Huang, BCK Tee, KW Ang Advanced Electronic Materials 4 (9), 1800274, 2018 | 27 | 2018 |
Xuewei FengNational University of Singapore在 u.nus.edu 的电子邮件经过验证
