| Uncooled infrared microbolometer arrays and their characterisation techniques RK Bhan, RS Saxena, CR Jalwani, SK Lomash Defence Science Journal 59 (6), 580, 2009 | 158 | 2009 |
| A new discrete circuit for readout of resistive sensor arrays RS Saxena, RK Bhan, A Aggrawal Sensors and Actuators A: Physical 149 (1), 93-99, 2009 | 67 | 2009 |
| Virtual ground technique for crosstalk suppression in networked resistive sensors RS Saxena, RK Bhan, NK Saini, R Muralidharan IEEE Sensors Journal 11 (2), 432-433, 2010 | 62 | 2010 |
| Nanotube tunneling FET with a core source for ultrasteep subthreshold swing: A simulation study G Musalgaonkar, S Sahay, RS Saxena, MJ Kumar IEEE Transactions on Electron Devices 66 (10), 4425-4432, 2019 | 59 | 2019 |
| A line tunneling field-effect transistor based on misaligned core–shell gate architecture in emerging nanotube FETs G Musalgaonkar, S Sahay, RS Saxena, MJ Kumar IEEE Transactions on Electron Devices 66 (6), 2809-2816, 2019 | 50 | 2019 |
| Analysis of crosstalk in networked arrays of resistive sensors RS Saxena, NK Saini, RK Bhan IEEE Sensors Journal 11 (4), 920-924, 2010 | 50 | 2010 |
| A stepped oxide hetero-material gate trench power MOSFET for improved performance RS Saxena, MJ Kumar IEEE transactions on electron devices 56 (6), 1355-1359, 2009 | 50 | 2009 |
| Dual-material-gate technique for enhanced transconductance and breakdown voltage of trench power MOSFETs RS Saxena, MJ Kumar IEEE transactions on electron devices 56 (3), 517-522, 2009 | 47 | 2009 |
| Polysilicon spacer gate technique to reduce gate charge of a trench power MOSFET RS Saxena, MJ Kumar IEEE transactions on electron devices 59 (3), 738-744, 2011 | 36 | 2011 |
| Effect of La doping on dielectric properties of BiFe0. 95Mn0. 05O3 multiferroics A Saxena, P Sharma, A Saxena, V Verma, RS Saxena Ceramics International 40 (9), 15065-15072, 2014 | 33 | 2014 |
| Trench gate power MOSFET: Recent advances and innovations RS Saxena, MJ Kumar arXiv preprint arXiv:1208.5553, 2012 | 30 | 2012 |
| Study of performance degradation in titanium microbolometer IR detectors due to elevated heating RS Saxena, RK Bhan, PS Rana, AK Vishwakarma, A Aggarwal, ... Infrared Physics & Technology 54 (4), 343-352, 2011 | 28 | 2011 |
| A new strained-silicon channel trench-gate power MOSFET: Design and analysis RS Saxena, MJ Kumar IEEE transactions on electron devices 55 (11), 3299-3304, 2008 | 28 | 2008 |
| Characterization of area arrays of microbolometer-based un-cooled IR detectors without using ROIC RS Saxena, RK Bhan, CR Jalwania, PS Rana, SK Lomash Sensors and Actuators A: Physical 141 (2), 359-366, 2008 | 25 | 2008 |
| A novel test structure for process control monitor for un-cooled bolometer area array detector technology RS Saxena, RK Bhan, CR Jalwania, SK Lomash JSTS: Journal of Semiconductor Technology and Science 6 (4), 299-312, 2006 | 23 | 2006 |
| Effect of excessive bias heating on a titanium microbolometer infrared detector RS Saxena, RK Bhan, CR Jalwania, K Khurana IEEE Sensors Journal 8 (11), 1801-1804, 2008 | 22 | 2008 |
| PSPICE circuit simulation of microbolometer infrared detectors with noise sources RS Saxena, A Panwar, SK Semwal, PS Rana, S Gupta, RK Bhan Infrared Physics & Technology 55 (6), 527-532, 2012 | 21 | 2012 |
| A sub-circuit model of a microbolometer IR detector and its experimental validation RS Saxena, A Panwar, SS Lamba, RK Bhan Sensors and Actuators A: Physical 171 (2), 138-145, 2011 | 18 | 2011 |
| Reducing readout complexity of large resistive sensor arrays RS Saxena, RK Bhan, A Aggrawal IEEE Sensors Journal 8 (11), 1862-1863, 2008 | 17 | 2008 |
| An impact ionization MOSFET with reduced breakdown voltage based on back-gate misalignment G Musalgaonkar, S Sahay, RS Saxena, MJ Kumar IEEE Transactions on Electron Devices 66 (2), 868-875, 2018 | 16 | 2018 |
Dr Bhan RKInstitute of Defence Scientist and Technologists在 sspl.drdo.in 的电子邮件经过验证
