| High performance indium-zinc-oxide thin-film transistors fabricated with a back-channel-etch-technique H Xu, L Lan, M Xu, J Zou, L Wang, D Wang, J Peng Applied Physics Letters 99 (25), 253501, 2011 | 101 | 2011 |
| A flexible AMOLED display on the PEN substrate driven by oxide thin-film transistors using anodized aluminium oxide as dielectric H Xu, D Luo, M Li, M Xu, J Zou, H Tao, L Lan, L Wang, J Peng, Y Cao Journal of Materials Chemistry C 2 (7), 1255-1259, 2014 | 100 | 2014 |
| Role of rare earth ions in anodic gate dielectrics for indium-zinc-oxide thin-film transistors D Luo, L Lan, M Xu, H Xu, M Li, L Wang, J Peng Journal of The Electrochemical Society 159 (5), H502, 2012 | 48 | 2012 |
| Enhancement of bias and illumination stability in thin-film transistors by doping InZnO with wide-band-gap Ta2O5 L Lan, N Xiong, P Xiao, M Li, H Xu, R Yao, S Wen, J Peng Applied Physics Letters 102 (24), 242102, 2013 | 44 | 2013 |
| Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transistors based on anodic aluminum oxide gate dielectrics L Lan, M Xu, J Peng, H Xu, M Li, D Luo, J Zou, H Tao, L Wang, R Yao journal of Applied Physics 110 (10), 103703, 2011 | 38 | 2011 |
| Influence of source and drain contacts on the properties of indium–gallium–zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer D Luo, H Xu, M Zhao, M Li, M Xu, J Zou, H Tao, L Wang, J Peng ACS Applied Materials & Interfaces 7 (6), 3633-3640, 2015 | 37 | 2015 |
| Trap-assisted enhanced bias illumination stability of oxide thin film transistor by praseodymium doping H Xu, M Xu, M Li, Z Chen, J Zou, W Wu, X Qiao, H Tao, L Wang, H Ning, ... ACS applied materials & interfaces 11 (5), 5232-5239, 2019 | 36 | 2019 |
| Wet-etch method for patterning metal electrodes directly on amorphous oxide semiconductor films M Zhao, L Lan, H Xu, M Xu, M Li, D Luo, L Wang, S Wen, J Peng ECS Solid State Letters 1 (5), P82, 2012 | 32 | 2012 |
| Impact of deposition temperature of the silicon oxide passivation on the performance of indium zinc oxide thin-film transistors M Li, L Lan, M Xu, H Xu, D Luo, N Xiong, J Peng Japanese Journal of Applied Physics 51 (7R), 076501, 2012 | 32 | 2012 |
| Effects of etching residue on positive shift of threshold voltage in amorphous indium–zinc-oxide thin-film transistors based on back-channel-etch structure D Luo, H Xu, M Li, H Tao, L Wang, J Peng, M Xu IEEE Transactions on Electron Devices 61 (1), 92-97, 2013 | 26 | 2013 |
| Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics M Li, L Lan, M Xu, L Wang, H Xu, D Luo, J Zou, H Tao, R Yao, J Peng Journal of Physics D: Applied Physics 44 (45), 455102, 2011 | 26 | 2011 |
| The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors P He, H Xu, L Lan, C Deng, Y Wu, Y Lin, S Chen, C Ding, X Li, M Xu, ... Communications Materials 2 (1), 1-10, 2021 | 24 | 2021 |
| Improving thermal stability of solution-processed indium zinc oxide thin-film transistors by praseodymium oxide doping M Li, W Zhang, W Chen, M Li, W Wu, H Xu, J Zou, H Tao, L Wang, M Xu, ... ACS applied materials & interfaces 10 (34), 28764-28771, 2018 | 24 | 2018 |
| Performance improvement of oxide thin-film transistors with a two-step-annealing method M Li, L Lan, M Xu, H Xu, D Luo, P Xiao, J Peng Solid-state electronics 91, 9-12, 2014 | 24 | 2014 |
| Fabrication of flexible amorphous indium-gallium-zinc-oxide thin-film transistors by a chemical vapor deposition-free process on polyethylene napthalate H Xu, J Pang, M Xu, M Li, Y Guo, Z Chen, L Wang, J Zou, H Tao, L Wang, ... ECS Journal of Solid State Science and Technology 3 (9), Q3035, 2014 | 22 | 2014 |
| High mobility flexible polymer thin-film transistors with an octadecyl-phosphonic acid treated electrochemically oxidized alumina gate insulator S Sun, L Lan, P Xiao, Z Chen, Z Lin, Y Li, H Xu, M Xu, J Chen, J Peng, ... Journal of Materials Chemistry C 3 (27), 7062-7066, 2015 | 21 | 2015 |
| Improvement of mobility and stability in oxide thin-film transistors using triple-stacked structure H Xu, M Xu, Z Chen, M Li, J Zou, H Tao, L Wang, J Peng IEEE Electron Device Letters 37 (1), 57-59, 2015 | 19 | 2015 |
| Improved performance of inverted quantum dot light-emitting diodes by blending the small-molecule and polymer materials as hole transport layer Y Liu, L Lan, B Liu, H Tao, M Li, H Xu, J Zou, M Xu, L Wang, J Peng, ... Organic Electronics 80, 105618, 2020 | 18 | 2020 |
| Improved performance of quantum dot light-emitting diodes by hybrid electron transport layer comprised of ZnO nanoparticles doped organic small molecule B Liu, L Lan, Y Liu, H Tao, H Li, H Xu, J Zou, M Xu, L Wang, J Peng, ... Organic Electronics 74, 144-151, 2019 | 18 | 2019 |
| Flexible organic field-effect transistors with high-reliability gate insulators prepared by a room-temperature, electrochemical-oxidation process S Sun, L Lan, P Xiao, Z Lin, H Xu, M Xu, J Peng RSC Advances 5 (20), 15695-15699, 2015 | 17 | 2015 |
