| Tin-Assisted Synthesis of by Molecular Beam Epitaxy M Kracht, A Karg, J Schörmann, M Weinhold, D Zink, F Michel, M Rohnke, ... Physical Review Applied 8 (5), 054002, 2017 | 155 | 2017 |
| Universality of electron accumulation at wurtzite c-and a-plane and zinc-blende InN surfaces PDC King, TD Veal, CF McConville, F Fuchs, J Furthmüller, F Bechstedt, ... Applied Physics Letters 91 (9), 2007 | 143 | 2007 |
| Molecular beam epitaxy of phase pure cubic InN J Schörmann, DJ As, K Lischka, P Schley, R Goldhahn, SF Li, W Löffler, ... Applied Physics Letters 89 (26), 2006 | 112 | 2006 |
| In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction J Schörmann, S Potthast, DJ As, K Lischka Applied Physics Letters 90 (4), 2007 | 89 | 2007 |
| Room temperature green light emission from nonpolar cubic InGaN∕ GaN multi-quantum-wells S Li, J Schörmann, DJ As, K Lischka Applied physics letters 90 (7), 2007 | 88 | 2007 |
| Optical properties of cubic GaN from 1 to 20 eV M Feneberg, M Röppischer, C Cobet, N Esser, J Schörmann, T Schupp, ... Physical Review B—Condensed Matter and Materials Physics 85 (15), 155207, 2012 | 80 | 2012 |
| Detection of oxidising gases using an optochemical sensor system based on GaN/InGaN nanowires K Maier, A Helwig, G Müller, P Becker, P Hille, J Schörmann, J Teubert, ... Sensors and Actuators B: Chemical 197, 87-94, 2014 | 63 | 2014 |
| UV photosensing characteristics of nanowire-based GaN/AlN superlattices J Lahnemann, M Den Hertog, P Hille, M de la Mata, T Fournier, ... Nano letters 16 (5), 3260-3267, 2016 | 61 | 2016 |
| Anisotropic Optical Properties of Metastable Grown by Plasma-Assisted Molecular Beam Epitaxy M Kracht, A Karg, M Feneberg, J Bläsing, J Schörmann, R Goldhahn, ... Physical Review Applied 10 (2), 024047, 2018 | 58 | 2018 |
| InGaN/GaN nanowires as a new platform for photoelectrochemical sensors–detection of NADH M Riedel, S Hölzel, P Hille, J Schörmann, M Eickhoff, F Lisdat Biosensors and Bioelectronics 94, 298-304, 2017 | 53 | 2017 |
| Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy J Schörmann, P Hille, M Schäfer, J Müßener, P Becker, PJ Klar, ... Journal of Applied Physics 114 (10), 2013 | 53 | 2013 |
| Ge doping of GaN beyond the Mott transition A Ajay, J Schörmann, M Jiménez-Rodriguez, CB Lim, F Walther, ... Journal of Physics D: Applied Physics 49 (44), 445301, 2016 | 52 | 2016 |
| Influence of Polymorphism on the Electronic Structure of Ga2O3 JEN Swallow, C Vorwerk, P Mazzolini, P Vogt, O Bierwagen, A Karg, ... Chemistry of Materials 32 (19), 8460-8470, 2020 | 50 | 2020 |
| Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors M Spies, MI Den Hertog, P Hille, J Schörmann, J Polaczyński, B Gayral, ... Nano Letters 17 (7), 4231-4239, 2017 | 50 | 2017 |
| Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations PDC King, TD Veal, CF McConville, F Fuchs, J Furthmüller, F Bechstedt, ... Physical Review B—Condensed Matter and Materials Physics 77 (11), 115213, 2008 | 48 | 2008 |
| Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band CB Lim, A Ajay, C Bougerol, B Haas, J Schörmann, M Beeler, ... Nanotechnology 26 (43), 435201, 2015 | 45 | 2015 |
| Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures M Beeler, P Hille, J Schormann, J Teubert, M De La Mata, J Arbiol, ... Nano letters 14 (3), 1665-1673, 2014 | 45 | 2014 |
| Dielectric function of cubic InN from the mid-infrared to the visible spectral range P Schley, R Goldhahn, C Napierala, G Gobsch, J Schoermann, DJ As, ... Semiconductor science and technology 23 (5), 055001, 2008 | 43 | 2008 |
| Magnetic and structural properties of Gd-implanted zinc-blende GaN FY Lo, A Melnikov, D Reuter, AD Wieck, V Ney, T Kammermeier, A Ney, ... Applied physics letters 90 (26), 2007 | 40 | 2007 |
| Electrical polarization in AlN/GaN nanodisks measured by momentum-resolved 4D scanning transmission electron microscopy K Müller-Caspary, T Grieb, J Müßener, N Gauquelin, P Hille, J Schörmann, ... Physical review letters 122 (10), 106102, 2019 | 39 | 2019 |
Martin EickhoffInstitut für Festkörperphysik, Universität Bremen在 ifp.uni-bremen.de 的电子邮件经过验证
