| Harvesting electrical energy from carbon nanotube yarn twist SH Kim, CS Haines, N Li, KJ Kim, TJ Mun, C Choi, J Di, YJ Oh, JP Oviedo, ... Science 357 (6353), 773-778, 2017 | 375 | 2017 |
| Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures C Zhang, C Gong, Y Nie, KA Min, C Liang, YJ Oh, H Zhang, W Wang, ... 2D Materials 4 (1), 015026, 2016 | 221 | 2016 |
| Computational search for direct band gap silicon crystals IH Lee, J Lee, YJ Oh, S Kim, KJ Chang Physical review B 90 (11), 115209, 2014 | 100 | 2014 |
| Electronic structure of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors and implications for device behavior WH Han, YJ Oh, KJ Chang, JS Park Physical Review Applied 3 (4), 044008, 2015 | 70 | 2015 |
| Ab initio materials design using conformational space annealing and its application to searching for direct band gap silicon crystals IH Lee, YJ Oh, S Kim, J Lee, KJ Chang Computer Physics Communications 203, 110-121, 2016 | 66 | 2016 |
| Dipole-allowed direct band gap silicon superlattices YJ Oh, IH Lee, S Kim, J Lee, KJ Chang Scientific reports 5 (1), 18086, 2015 | 50 | 2015 |
| The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors YJ Oh, HK Noh, KJ Chang Science and technology of advanced materials 16 (3), 034902, 2015 | 21 | 2015 |
| Hybrid functional versus quasiparticle calculations for the Schottky barrier and effective work function at TiN/HfO interface YJ Oh, AT Lee, HK Noh, KJ Chang Physical Review B 87 (7), 075325, 2013 | 17 | 2013 |
| Direct band gap carbon superlattices with efficient optical transition YJ Oh, S Kim, IH Lee, J Lee, KJ Chang Physical Review B 93, 085201, 2016 | 16 | 2016 |
| Ab initio study of boron segregation and deactivation at Si/SiO2 interface YJ Oh, JH Hwang, HK Noh, J Bang, B Ryu, KJ Chang Microelectronic engineering 89, 120-123, 2012 | 16 | 2012 |
| Effects of interface bonding and defects on boron diffusion at Si/SiO2 interface GM Kim, YJ Oh, KJ Chang Journal of applied physics 114 (22), 2013 | 14 | 2013 |
| First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2 YJ Oh, HK Noh, KJ Chang Physica B: Condensed Matter 407 (15), 2989-2992, 2012 | 9 | 2012 |
| Atomically thin transition metal layers: Atomic layer stabilization and metal-semiconductor transition J Hwang, YJ Oh, J Kim, MM Sung, K Cho Journal of Applied Physics 123 (15), 2018 | 8 | 2018 |
| Three-dimensional buckled honeycomb boron lattice with vacancies as an intermediate phase on the transition pathway from α-B to γ-B WH Han, YJ Oh, DH Choe, S Kim, IH Lee, KJ Chang NPG Asia Materials 9 (7), e400-e400, 2017 | 6 | 2017 |
| Electronic transport across metal-graphene edge contact C Gong, C Zhang, YJ Oh, W Wang, G Lee, B Shan, RM Wallace, K Cho 2D Materials 4 (2), 025033, 2017 | 5 | 2017 |
| First principles study of the Mn-doping effect on the physical and chemical properties of mullite-family Al 2 SiO 5 Q Wang, C Liang, Y Zheng, N Ashburn, YJ Oh, F Kong, C Zhang, Y Nie, ... Physical Chemistry Chemical Physics 19 (36), 24991-25001, 2017 | 5 | 2017 |
| The effect of Al segregation on Schottky barrier height and effective work function in TiAl/TiN/HfO2 gate stacks GM Kim, YJ Oh, KJ Chang Journal of Physics D: Applied Physics 49 (27), 275104, 2016 | 3 | 2016 |
| Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces HK Noh, YJ Oh, KJ Chang Physica B: Condensed Matter 407 (15), 2907-2910, 2012 | 3 | 2012 |
| Suppression of boron segregation by interface Ge atoms at SiGe/SiO2 interface CH Lee, GM Kim, YJ Oh, KJ Chang Current Applied Physics 14 (11), 1557-1563, 2014 | 1 | 2014 |
| The Active Site of NO Oxidation over Mn-Mullite Oxide Catalysts Y Zheng, S Thampy, S Dillon, K Xiong, K Tan, YJ Oh, F Kong, YJ Lee, ... 25th North American Catalysis Society Meeting, 2017 | | 2017 |
Kee Joo ChangKorea Advanced Institute of Science and Technology在 kaist.ac.kr 的电子邮件经过验证
