Intrinsic current− voltage characteristics of graphene nanoribbon transistors and effect of edge doping Q Yan, B Huang, J Yu, F Zheng, J Zang, J Wu, BL Gu, F Liu, W Duan Nano letters 7 (6), 1469-1473, 2007 | 696 | 2007 |
Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures K Liu, Q Yan, M Chen, W Fan, Y Sun, J Suh, D Fu, S Lee, J Zhou, ... Nano letters 14 (9), 5097, 2014 | 632 | 2014 |
Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN PG Moses, M Miao, Q Yan, CG Van de Walle The Journal of chemical physics 134 (8), 2011 | 344 | 2011 |
First-principles theory of nonradiative carrier capture via multiphonon emission A Alkauskas, Q Yan, CG Van de Walle Physical Review B 90 (7), 075202, 2014 | 341 | 2014 |
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Y Zhao, Q Yan, CY Huang, SC Huang, P Shan Hsu, S Tanaka, CC Pan, ... Applied Physics Letters 100 (20), 2012 | 218 | 2012 |
Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes E Kioupakis, Q Yan, CG Van de Walle Applied Physics Letters 101 (23), 2012 | 213 | 2012 |
Learning atoms for materials discovery Q Zhou, P Tang, S Liu, J Pan, Q Yan, SC Zhang Proceedings of the National Academy of Sciences 115 (28), E6411-E6417, 2018 | 209 | 2018 |
Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN Q Yan, P Rinke, M Scheffler, CG Van de Walle Applied Physics Letters 95 (12), 2009 | 201 | 2009 |
Solar fuels photoanode materials discovery by integrating high-throughput theory and experiment Q Yan, J Yu, SK Suram, L Zhou, A Shinde, PF Newhouse, W Chen, G Li, ... Proceedings of the National Academy of Sciences 114 (12), 3040-3043, 2017 | 192 | 2017 |
Making a field effect transistor on a single graphene nanoribbon by selective doping B Huang, Q Yan, G Zhou, J Wu, BL Gu, W Duan, F Liu Applied Physics Letters 91 (25), 2007 | 184 | 2007 |
Polarization-Driven Topological Insulator Transition in a Quantum Well MS Miao, Q Yan, CG Van de Walle, WK Lou, LL Li, K Chang Physical review letters 109 (18), 186803, 2012 | 180 | 2012 |
Origins of optical absorption and emission lines in AlN Q Yan, A Janotti, M Scheffler, CG Van de Walle Applied Physics Letters 105 (11), 2014 | 177 | 2014 |
Role of nitrogen vacancies in the luminescence of Mg-doped GaN Q Yan, A Janotti, M Scheffler, CG Van de Walle Applied Physics Letters 100 (14), 2012 | 168 | 2012 |
Negative Poisson’s ratio in 1T-type crystalline two-dimensional transition metal dichalcogenides L Yu, Q Yan, A Ruzsinszky Nature Communications 8, 15224, 2017 | 162 | 2017 |
Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices E Kioupakis, Q Yan, D Steiauf, CG Van de Walle New Journal of Physics 15 (12), 125006, 2013 | 154 | 2013 |
Effects of strain on the band structure of group-III nitrides Q Yan, P Rinke, A Janotti, M Scheffler, CG Van de Walle Physical Review B 90 (12), 125118, 2014 | 151 | 2014 |
Microscopic origin of the -type conductivity of the topological crystalline insulator SnTe and the effect of Pb alloying N Wang, D West, J Liu, J Li, Q Yan, BL Gu, SB Zhang, W Duan Physical Review B 89 (4), 045142, 2014 | 120 | 2014 |
High Throughput Discovery of Solar Fuels Photoanodes in the CuO–V2O5 System L Zhou, Q Yan, A Shinde, D Guevarra, PF Newhouse, ... Advanced Energy Materials 5 (22), 1500968, 2015 | 103 | 2015 |
Band parameters and strain effects in ZnO and group-III nitrides Q Yan, P Rinke, M Winkelnkemper, A Qteish, D Bimberg, M Scheffler, ... Semiconductor science and technology 26 (1), 014037, 2010 | 102 | 2010 |
High optical polarization ratio from semipolar (202 1) blue-green InGaN/GaN light-emitting diodes Y Zhao, S Tanaka, Q Yan, CY Huang, RB Chung, CC Pan, K Fujito, ... Applied physics letters 99 (5), 2011 | 98 | 2011 |