| Direct observation of a two-dimensional hole gas at oxide interfaces H Lee, N Campbell, J Lee, TJ Asel, TR Paudel, H Zhou, JW Lee, ... Nature materials 17 (3), 231-236, 2018 | 207 | 2018 |
| Strain-driven disproportionation at a correlated oxide metal-insulator transition TH Kim, TR Paudel, RJ Green, K Song, HS Lee, SY Choi, J Irwin, ... Physical Review B 101 (12), 121105, 2020 | 35 | 2020 |
| Deep level defects and cation sublattice disorder in ZnGeN2 MS Haseman, MR Karim, D Ramdin, BA Noesges, E Feinberg, ... Journal of Applied Physics 127 (13), 2020 | 30 | 2020 |
| Identification of a functional point defect in SrTiO3 D Lee, H Wang, BA Noesges, TJ Asel, J Pan, JW Lee, Q Yan, LJ Brillson, ... Physical Review Materials 2 (6), 060403(R), 2018 | 24 | 2018 |
| Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments GM Foster, A Koehler, M Ebrish, J Gallagher, T Anderson, B Noesges, ... Applied Physics Letters 117 (8), 2020 | 22 | 2020 |
| Cathodoluminescence and x-ray photoelectron spectroscopy of ScN: Dopant, defects, and band structure MS Haseman, BA Noesges, S Shields, JS Cetnar, AN Reed, HA Al-Atabi, ... APL Materials 8 (8), 2020 | 19 | 2020 |
| Chemical migration and dipole formation at van der Waals interfaces between magnetic transition metal chalcogenides and topological insulators BA Noesges, T Zhu, JJ Repicky, S Yu, F Yang, JA Gupta, RK Kawakami, ... Physical Review Materials 4 (5), 054001, 2020 | 13 | 2020 |
| Influence of Surface Chemistry on Water Absorption in Functionalized Germanane TJ Asel, WLB Huey, B Noesges, E Molotokaite, SC Chien, Y Wang, ... Chemistry of Materials 32 (4), 1537-1544, 2020 | 12 | 2020 |
| Experimental determination of the valence band offsets of ZnGeN2 and (ZnGe) 0.94 Ga0. 12N2 with GaN MR Karim, BA Noesges, BHD Jayatunga, M Zhu, J Hwang, ... Journal of Physics D: Applied Physics 54 (24), 245102, 2021 | 11 | 2021 |
| Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time KR Gann, N Pieczulewski, CA Gorsak, K Heinselman, TJ Asel, ... Journal of Applied Physics 135 (1), 2024 | 7 | 2024 |
| Coherent growth and characterization of van der Waals layers on GaAs(111)B using molecular beam epitaxy T Zhu, DJ O’Hara, BA Noesges, M Zhu, JJ Repicky, MR Brenner, ... Physical Review Materials 4 (8), 084002, 2020 | 4 | 2020 |
| Nanoscale interplay of native point defects near Sr-deficient SrxTiO3/SrTiO3 interfaces BA Noesges, D Lee, JW Lee, CB Eom, LJ Brillson Journal of Vacuum Science & Technology A 40 (4), 2022 | 3 | 2022 |
| Oxidation of quantum dots encapsulated in block copolymer micelles as a function of polymer terminal charge KH Lee, BA Noesges, C McPherson, F Khan, LJ Brillson, JO Winter Nanoscale 14 (32), 11779-11789, 2022 | 3 | 2022 |
| Admittance spectroscopy study of defects in β-Ga2O3 JV Li, J Hendricks, A Charnas, BA Noesges, AT Neal, TJ Asel, Y Kim, ... Thin Solid Films 789, 140196, 2024 | 1 | 2024 |
| Germanium surface segregation in highly doped Ge: β-Ga2O3 grown by molecular beam epitaxy observed by synchrotron radiation hard x-ray photoelectron spectroscopy A Boucly, TC Back, TJ Asel, BA Noesges, PE Evans, C Weiland, N Barrett Applied Physics Letters 125 (19), 2024 | | 2024 |
| Mercury-probe measurement of electron mobility in β-Ga2O3 using junction moderated dielectric relaxation J Li, Y Kim, A Charnas, B Noesges, P Evans, T Asel, AT Neal, C Gorsak, ... Japanese Journal of Applied Physics, 2024 | | 2024 |
| Cathodoluminescence and X-Ray Photoelectron Spectroscopy of ScN: Dopant, Defects, and Band Structure (Postprint) AN Reed, MS Haseman, BA Noesges, S Shields, LJ Brillson, JS Cetnar, ... Air Force Research Laboratory, Materials and Manufacturing Directorate …, 2020 | | 2020 |
Leonard BrillsonThe Ohio State University在 osu.edu 的电子邮件经过验证
Leonard BrillsonThe Ohio State University在 osu.edu 的电子邮件经过验证
Thaddeus J. AselAir Force Research Laboratory在 us.af.mil 的电子邮件经过验证