| Optical and electronic properties of pure and fully hydrogenated SiC and GeC nanosheets: first-principles study S Majidi, NB Nezafat, DP Rai, A Achour, H Ghaziasadi, A Sheykhian, ... Optical and Quantum Electronics 50, 1-13, 2018 | 31 | 2018 |
| Induced rectification behavior in armchair SiC nanoribbon by Al and P doping E Zaminpayma, H Ghaziasadi, P Nayebi Computational Condensed Matter 21, e00409, 2019 | 9 | 2019 |
| Rectification of graphene self-switching diodes: First-principles study H Ghaziasadi, S Jamasb, P Nayebi, M Fouladian Physica E: Low-dimensional Systems and Nanostructures 99, 123-133, 2018 | 9 | 2018 |
| The effect of gas flow rate on structural, mechanical and antibacterial properties of atmospheric plasma sprayed Cu coatings M Goudarzi, H Ghaziasadi Physica Scripta 96 (7), 075601, 2021 | 8 | 2021 |
| Electronic and magnetic properties of B, Al, N and P impurities in SnC nanoribbons: first-principles study H Ghaziasadi, P Nayebi Materials Research Express 5 (11), 115012, 2018 | 8 | 2018 |
| Effect of side gates doping on graphene self-switching nano-diode rectification H Ghaziasadi, S Jamasb, P Nayebi Materials Research Express 6 (7), 075012, 2019 | 3 | 2019 |
| Large rectification ratio induced by nitrogen and boron doping in adjacent armchair graphene nanoribbons H Ghaziasadi, P Nayebi, S Majidi Materials Letters 273, 127957, 2020 | 2 | 2020 |
| یکسوکنندگی در نانو دیود خودسوئیچ گرافنی با استفاده از آلایش گیت های جانبی قاضی اسدی, حسن, نایبی, پیمان نشریه مهندسی برق و الکترونیک ایران 18 (1), 9-16, 2021 | | 2021 |
| Rectification in Graphene Self-Switching Nanodiode Using Side Gates Doping H Ghaziasadi, P Nayebi JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS 18 …, 2021 | | 2021 |
