| Development and characterization of Au− YSZ surface plasmon resonance based sensing materials: High temperature detection of CO G Sirinakis, R Siddique, I Manning, PH Rogers, MA Carpenter The Journal of Physical Chemistry B 110 (27), 13508-13511, 2006 | 92 | 2006 |
| Tensile stress generation and dislocation reduction in Si-doped films IC Manning, X Weng, JD Acord, MA Fanton, DW Snyder, JM Redwing Journal of Applied Physics 106 (2), 023506, 2009 | 57 | 2009 |
| Dislocation bending and tensile stress generation in GaN and AlGaN films S Raghavan, IC Manning, X Weng, JM Redwing Journal of crystal growth 359, 35-42, 2012 | 42 | 2012 |
| In situ measurement of stress generation arising from dislocation inclination in thin films JD Acord, IC Manning, X Weng, DW Snyder, JM Redwing Applied Physics Letters 93 (11), 111910, 2008 | 36 | 2008 |
| Prismatic Slip in PVT-Grown 4H-SiC Crystals J Guo, Y Yang, B Raghothamachar, J Kim, M Dudley, G Chung, ... Journal of Electronic Materials 46, 2040-2044, 2017 | 30 | 2017 |
| High quality 150 mm 4H SiC wafers for power device production J Quast, D Hansen, M Loboda, I Manning, K Moeggenborg, S Mueller, ... Materials Science Forum 821, 56-59, 2015 | 26 | 2015 |
| Method for manufacturing SiC wafer fit for integration with power device manufacturing technology D Hansen, M Loboda, I Manning, K Moeggenborg, S Mueller, C Parfeniuk, ... US Patent 9,279,192, 2016 | 18 | 2016 |
| Large area 4H SiC products for power electronic devices I Manning, J Zhang, B Thomas, E Sanchez, D Hansen, D Adams, ... Materials Science Forum 858, 11-14, 2016 | 18 | 2016 |
| Relationship between basal plane dislocation distribution and local basal plane bending in PVT-grown 4H-SiC crystals T Ailihumaer, H Peng, B Raghothamachar, M Dudley, G Chung, ... Journal of Electronic Materials 49 (6), 3455-3464, 2020 | 17 | 2020 |
| Progress in bulk 4H SiC crystal growth for 150 mm wafer production I Manning, Y Matsuda, G Chung, E Sanchez, M Dudley, T Ailihumaer, ... Materials Science Forum 1004, 37-43, 2020 | 16 | 2020 |
| Effect of doping concentration variations in PVT-grown 4H-SiC wafers Y Yang, J Guo, O Goue, B Raghothamachar, M Dudley, G Chung, ... Journal of Electronic Materials 45, 2066-2070, 2016 | 11 | 2016 |
| Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals T Ailihumaer, H Peng, Y Liu, B Raghothamachar, M Dudley, G Chung, ... Journal of Electronic Materials 50, 3258-3265, 2021 | 10 | 2021 |
| Synchrotron X-ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC wafers Y Yang, JQ Guo, O Goue, B Raghothamachar, M Dudley, GY Chung, ... Materials Science Forum 858, 105-108, 2016 | 9 | 2016 |
| Progress in large-area 4H-SiC epitaxial layer growth in a warm-wall planetary reactor B Thomas, DM Hansen, J Zhang, MJ Loboda, J Uchiyama, TJ Toth, ... Materials Science Forum 778, 103-108, 2014 | 9 | 2014 |
| Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers T Ailihumaer, HY Peng, B Raghothamachar, M Dudley, G Chung, ... Materials Science Forum 1004, 393-400, 2020 | 8 | 2020 |
| Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers Y Yang, J Guo, OY Goue, JG Kim, B Raghothamachar, M Dudley, ... Journal of Electronic Materials 47, 1218-1222, 2018 | 8 | 2018 |
| Optimization of 150 mm 4H SiC substrate crystal quality I Manning, GY Chung, E Sanchez, Y Yang, JQ Guo, O Goue, ... Materials Science Forum 924, 11-14, 2018 | 8 | 2018 |
| Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers Y Yang, J Guo, O Goue, B Raghothamachar, M Dudley, G Chung, ... Journal of Crystal Growth 452, 35-38, 2016 | 8 | 2016 |
| Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1− xN IC Manning, X Weng, MA Fanton, DW Snyder, JM Redwing Journal of crystal growth 312 (8), 1301-1306, 2010 | 8 | 2010 |
| Investigation of dislocation behavior at the early stage of PVT-grown 4H-SiC crystals T Ailihumaer, B Raghothamachar, M Dudley, G Chung, I Manning, ... Materials Science Forum 1004, 44-50, 2020 | 7 | 2020 |
