| Precipitation as the phenomenon responsible for the electrically inactive phosphorus in silicon D Nobili, A Armigliato, M Finnetti, S Solmi Journal of Applied Physics 53 (3), 1484-1491, 1982 | 179 | 1982 |
| Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates S Solmi, A Parisini, R Angelucci, A Armigliato, D Nobili, L Moro Physical Review B 53 (12), 7836, 1996 | 165 | 1996 |
| Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy V Senez, A Armigliato, I De Wolf, G Carnevale, R Balboni, S Frabboni, ... Journal of Applied Physics 94 (9), 5574-5583, 2003 | 125 | 2003 |
| Precipitation, aggregation, and diffusion in heavily arsenic-doped silicon D Nobili, S Solmi, A Parisini, M Derdour, A Armigliato, L Moro Physical Review B 49 (4), 2477, 1994 | 123 | 1994 |
| The nature of electrically inactive antimony in silicon A Nylandsted Larsen, FT Pedersen, G Weyer, R Galloni, R Rizzoli, ... Journal of applied physics 59 (6), 1908-1917, 1986 | 94 | 1986 |
| Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices A Armigliato, R Balboni, GP Carnevale, G Pavia, D Piccolo, S Frabboni, ... Applied Physics Letters 82 (13), 2172-2174, 2003 | 85 | 2003 |
| Growth and structure of titanium silicide phases formed by thin Ti films on Si crystals GG Bentini, R Nipoti, A Armigliato, M Berti, AV Drigo, C Cohen Journal of Applied Physics 57 (2), 270-275, 1985 | 79 | 1985 |
| Electrical activity and structural evolution correlations in laser and thermally annealed As‐implanted Si specimens A Parisini, A Bourret, A Armigliato, M Servidori, S Solmi, R Fabbri, ... Journal of applied physics 67 (5), 2320-2332, 1990 | 77 | 1990 |
| Semiconductor Silicon 1977 A Armigliato, D Nobili, P Ostoja, M Servidori, S Solmi, H Huff, E Sirtl The Electrochemical Society 77, 2, 1977 | 65 | 1977 |
| Electrical activation of boron-implanted silicon during rapid thermal annealing E Landi, A Armigliato, S Solmi, R Kögler, E Wieser Applied Physics A 47, 359-366, 1988 | 57 | 1988 |
| Determination of bulk mismatch values in trasmission electron microscopy cross-sections of heteostructures by convergent-beam electron diffraction R Balboni, S Frabboni, A Armigliato Philosophical Magazine A 77 (1), 67-83, 1998 | 56 | 1998 |
| Extended x-ray-absorption fine-structure study of the local atomic structure in As+ heavily implanted silicon JL Allain, JR Regnard, A Bourret, A Parisini, A Armigliato, G Tourillon, ... Physical Review B 46 (15), 9434, 1992 | 56 | 1992 |
| On the growth of stacking faults and dislocations induced in silicon by phosphorus predeposition A Armigliato, M Servidori, S Solmi, I Vecchi Journal of Applied Physics 48 (5), 1806-1812, 1977 | 55 | 1977 |
| SiP precipitation within the doped silicon lattice, concomitant with phosphorus predeposition A Armigliato, D Nobili, M Servidori, S Solmi Journal of Applied Physics 47 (12), 5489-5491, 1976 | 55 | 1976 |
| Techniques for mechanical strain analysis in sub-micrometer structures: TEM/CBED, micro-Raman spectroscopy, X-ray micro-diffraction and modeling I De Wolf, V Senez, R Balboni, A Armigliato, S Frabboni, A Cedola, ... Microelectronic engineering 70 (2-4), 425-435, 2003 | 53 | 2003 |
| nlinImproving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures A Armigliato, R Balboni, S Frabboni Applied Physics Letters 86 (6), 2005 | 51 | 2005 |
| Electron microscopy of As supersaturated silicon A Armigliato, D Nobili, S Solmi, A Bourret, P Werner Journal of the Electrochemical Society 133 (12), 2560, 1986 | 51 | 1986 |
| Preparation of cross-sections of silicon specimens for transmission electron microscopy A Garulli, A Armigliato, M Vanzi Journal de microscopie et de spectroscopie électroniques 10 (2), 135-144, 1985 | 51 | 1985 |
| Equilibrium carrier density and solubility of antimony in silicon D Nobili, R Angelucci, A Armigliato, E Landi, S Solmi Journal of the Electrochemical Society 136 (4), 1142, 1989 | 50 | 1989 |
| Synthesis of MMoO4/SiO2 catalysts (M= Ni or Co) by a sol–gel route via silicon alkoxides: Stabilization of β-NiMoO4 at room temperature D Cauzzi, M Deltratti, G Predieri, A Tiripicchio, A Kaddouri, C Mazzocchia, ... Applied Catalysis A: General 182 (1), 125-135, 1999 | 44 | 1999 |
