| Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O Q Xie, YL Jiang, C Detavernier, D Deduytsche, RL Van Meirhaeghe, ... Journal of applied physics 102 (8), 2007 | 319 | 2007 |
| Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111) S Zhu, RL Van Meirhaeghe, C Detavernier, F Cardon, GP Ru, XP Qu, ... Solid-State Electronics 44 (4), 663-671, 2000 | 293 | 2000 |
| Germanium surface passivation and atomic layer deposition of high-k dielectrics—A tutorial review on Ge-based MOS capacitors Q Xie, S Deng, M Schaekers, D Lin, M Caymax, A Delabie, XP Qu, ... Semiconductor Science and Technology 27 (7), 074012, 2012 | 204 | 2012 |
| Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition Q Xie, J Musschoot, D Deduytsche, RL Van Meirhaeghe, C Detavernier, ... Journal of The Electrochemical Society 155 (9), H688, 2008 | 162 | 2008 |
| Electrical characteristics of CoSi2/n-Si (1 0 0) Schottky barrier contacts formed by solid state reaction S Zhu, C Detavernier, RL Van Meirhaeghe, F Cardon, GP Ru, XP Qu, ... Solid-State Electronics 44 (10), 1807-1818, 2000 | 129 | 2000 |
| Improved barrier properties of ultrathin Ru film with TaN interlayer for copper metallization XP Qu, JJ Tan, M Zhou, T Chen, Q Xie, GP Ru, BZ Li Applied physics letters 88 (15), 2006 | 120 | 2006 |
| Superior thermal stability of Ta/TaN bi-layer structure for copper metallization Q Xie, XP Qu, JJ Tan, YL Jiang, M Zhou, T Chen, GP Ru Applied Surface Science 253 (3), 1666-1672, 2006 | 97 | 2006 |
| The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method SY Liu, T Chen, J Wan, GP Ru, BZ Li, XP Qu Applied Physics A 94, 775-780, 2009 | 84 | 2009 |
| The effect of glycine and benzotriazole on corrosion and polishing properties of cobalt in acid slurry HS Lu, X Zeng, JX Wang, F Chen, XP Qu Journal of The Electrochemical Society 159 (9), C383, 2012 | 82 | 2012 |
| The effect of postannealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction SY Liu, T Chen, YL Jiang, GP Ru, XP Qu Journal of Applied Physics 105 (11), 2009 | 82 | 2009 |
| The effect of H2O2 and 2-MT on the chemical mechanical polishing of cobalt adhesion layer in acid slurry HS Lu, JX Wang, X Zeng, F Chen, XM Zhang, WJ Zhang, XP Qu Electrochemical and Solid-State Letters 15 (4), H97, 2012 | 68 | 2012 |
| Ru thin film grown on TaN by plasma enhanced atomic layer deposition Q Xie, YL Jiang, J Musschoot, D Deduytsche, C Detavernier, ... Thin Solid Films 517 (16), 4689-4693, 2009 | 68 | 2009 |
| Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure XR Wang, YL Jiang, Q Xie, C Detavernier, GP Ru, XP Qu, BZ Li Microelectronic Engineering 88 (5), 573-577, 2011 | 67* | 2011 |
| ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems T Waechtler, SF Ding, L Hofmann, R Mothes, Q Xie, S Oswald, ... Microelectronic Engineering 88 (5), 684-689, 2011 | 67 | 2011 |
| Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer Q Xie, D Deduytsche, M Schaekers, M Caymax, A Delabie, XP Qu, ... Applied Physics Letters 97 (11), 2010 | 55 | 2010 |
| Silicon nanowire sensor for gas detection fabricated by nanoimprint on SU8/SiO2/PMMA trilayer J Wan, SR Deng, R Yang, Z Shu, BR Lu, SQ Xie, Y Chen, E Huq, R Liu, ... Microelectronic Engineering 86 (4-6), 1238-1242, 2009 | 54 | 2009 |
| Schottky barrier characteristics of ternary silicide Co1− xNixSi2 on n-Si (1 0 0) contacts formed by solid phase reaction of multilayer S Zhu, RL Van Meirhaeghe, S Forment, GP Ru, XP Qu, BZ Li Solid-State Electronics 48 (7), 1205-1209, 2004 | 53 | 2004 |
| The properties of Ru on Ta-based barriers JJ Tan, XP Qu, Q Xie, Y Zhou, GP Ru Thin solid films 504 (1-2), 231-234, 2006 | 52 | 2006 |
| Schottky barrier height inhomogeneity of Ti/n-GaAs contact studied by the IVT technique J Yu-Long, R Guo-Ping, L Fang, Q Xin-Ping, L Bing-Zong, L Wei, ... Chinese Physics Letters 19 (4), 553, 2002 | 47 | 2002 |
| The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction T Chen, SY Liu, Q Xie, C Detavernier, RL Van Meirhaeghe, XP Qu Applied Physics A 98, 357-365, 2010 | 46 | 2010 |
Shenqi XieEPFL在 epfl.ch 的电子邮件经过验证
Shenqi XieEPFL在 epfl.ch 的电子邮件经过验证