| 2.07-kV AlGaN/GaN Schottky barrier diodes on silicon with high Baliga’s figure-of-merit CW Tsou, KP Wei, YW Lian, SSH Hsu IEEE Electron Device Letters 37 (1), 70-73, 2015 | 119 | 2015 |
| 101-GHz InAlN/GaN HEMTs on silicon with high Johnson’s figure-of-merit CW Tsou, CY Lin, YW Lian, SSH Hsu IEEE Transactions on Electron Devices 62 (8), 2675-2678, 2015 | 59 | 2015 |
| Temperature-dependent leakage current characteristics of homojunction GaN pin rectifiers using ion-implantation isolation CW Tsou, MH Ji, M Bakhtiary-Noodeh, T Detchprohm, RD Dupuis, ... IEEE Transactions on Electron Devices 66 (10), 4273-4278, 2019 | 22 | 2019 |
| AlGaN/GaN HEMTs on silicon with hybrid Schottky–ohmic drain for RF applications CW Tsou, HC Kang, YW Lian, SSH Hsu IEEE Transactions on Electron Devices 63 (11), 4218-4225, 2016 | 22 | 2016 |
| GaN-on-silicon devices and technologies for RF and microwave applications SSH Hsu, CW Tsou, YW Lian, YS Lin 2016 IEEE International Symposium on Radio-Frequency Integration Technology …, 2016 | 21 | 2016 |
| Effective leakage current reduction in GaN ultraviolet avalanche photodiodes with an ion-implantation isolation method M Cho, Z Xu, M Bakhtiary-Noodeh, H Jeong, CW Tsou, T Detchprohm, ... IEEE Transactions on Electron Devices 68 (6), 2759-2763, 2021 | 18 | 2021 |
| Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production D Key, E Letts, CW Tsou, MH Ji, M Bakhtiary-Noodeh, T Detchprohm, ... Materials 12 (12), 1925, 2019 | 15 | 2019 |
| A 57-GHz CMOS VCO with 185.3% tuning-range enhancement using tunable LC source-degeneration CW Tsou, CC Chen, YS Lin Microwave and Optical Technology Letters 51 (11), 2682-2684, 2009 | 10 | 2009 |
| IEEE Trans. Electron Devices CW Tsou, KP Wei, YW Lian, SSH Hsu IEEE Trans. Electron Devices 62, 2675, 2015 | 7 | 2015 |
| 24-GHz in-phase/quadrature direct-down converter with integrated quadrature couplers and baluns in standard 0.18 µm CMOS technology CW Tsou, CC Chen, YS Lin IET microwaves, antennas & propagation 5 (6), 718-727, 2011 | 5 | 2011 |
| III-nitride vertical resonant cavity light-emitting diodes with hybrid air-gap/AlGaN-dielectric distributed Bragg reflectors J Wang, CW Tsou, H Jeong, YJ Park, T Detchprohm, K Mehta, PD Yoder, ... Gallium Nitride Materials and Devices XIV 10918, 9-15, 2019 | 4 | 2019 |
| A single‐chip 24‐GHz differential I/Q receiver in 0.18‐μm CMOS technology CC Chen, CW Tsou, YS Lin Microwave and Optical Technology Letters 53 (11), 2593-2601, 2011 | 4 | 2011 |
| High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalanche Photodiodes Grown by MOCVD Fabricated Using Ion-Implantation Isolation M Bakhtiary-Noodeh, M Cho, H Jeong, Z Xu, CW Tsou, C Cao, SC Shen, ... Journal of Electronic Materials 50 (8), 4462-4468, 2021 | 3 | 2021 |
| Low-noise GaN pin avalanche photodiodes for ultraviolet applications using an ion-implantation isolation technique M Cho, H Jeong, CW Tsou, M Bakhtiary-Noodeh, T Detchprohm, ... 2020 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2020 | 3 | 2020 |
| III-nitride emitters and detectors for UV optoelectronic applications grown by metalorganic chemical vapor deposition RD Dupuis, T Detchprohm, HH Ji, M Bakhtiary-Noodeh, H Jeong, P Chen, ... UV and Higher Energy Photonics: From Materials to Applications 2019 11086, 16-22, 2019 | 2 | 2019 |
| (Invited) Performance Evaluation of III-N Bipolar Switches Grown on GaN Substrates SC Shen, C Tsou, MH Ji, M Noodeh, E Letts, D Key, T Hashimoto, ... Electrochemical Society Meeting Abstracts 236, 1350-1350, 2019 | 1 | 2019 |
| Rf power transistor SH Hsu, CW Tsou, YW Lien, NTH University US Patent App. 15/088,909, 2016 | 1 | 2016 |
| Gallium Nitride-Based Device with Step-Wise Field Plate and Method Making the Same W Wang, W Yang, Y Chang, R Su, Y Lin, C Tsou, CL Tsai US Patent App. 18/784,121, 2024 | | 2024 |
| (Invited) Development of Ultraviolet Vertical-Cavity Surface-Emitting Light Sources RD Dupuis, T Detchphrom, C Tsou, Y Park, H Jeong, K Mehta, P Chen, ... Electrochemical Society Meeting Abstracts 236, 1276-1276, 2019 | | 2019 |
| Structure of epitaxial wafer and method of fabricating the same PC Yeh, KH Tsai, T Chuan-Wei, HY Lee, HH Liu, HC Ho, YK Fu US Patent 10,074,533, 2018 | | 2018 |
Shawn S. H. HsuNational Tsing Hua University在 ee.nthu.edu.tw 的电子邮件经过验证
