| Consideration of BTI variability and product level reliability to expedite advanced FinFET process development YH Lee, JH Lee, YF Wang, R Hsieh, YS Tsai, K Huang 2016 IEEE International Electron Devices Meeting (IEDM), 2016 | 18 | 2016 |
| The impact and implication of BTI/HCI decoupling on ring oscillator MH Hsieh, YC Huang, TY Yew, W Wang, YH Lee IEEE International Reliability Physics Symposium, 6A.4.1 - 6A.4.5, 2015 | 16 | 2015 |
| Re-investigation of frequency dependence of PBTI/TDDB and its impact on fast switching logic circuits YC Huang, TY Yew, W Wang, YH Lee, JR Shih, K Wu IEEE International Reliability Physics Symposium (IRPS), 4A.4.1 - 4A.4.5, 2013 | 14 | 2013 |
| Re-investigation of gate oxide breakdown on logic circuit reliability YC Huang, TY Yew, W Wang, YH Lee, R Ranjan, NK Jha, PJ Liao, ... International Reliability Physics Symposium, 2A.4.1 - 2A.4.6, 2011 | 13 | 2011 |
| Split gate structure and method of using same YC Huang, CH Wang, TY Yu US Patent 9,063,192, 2015 | 10 | 2015 |
| The impact of inverter-like transitions on device TDDB and ring oscillators TY Yew, YC Huang, MH Hsieh, W Wang, YH Lee IEEE International Reliability Physics Symposium, GD.1.1 - GD.1.5, 2015 | 10 | 2015 |
| Frequency dependence of NBTI in high-k/metal-gate technology MH Hsieh, D Maji, YC Huang, TY Yew, W Wang, YH Lee, JR Shih, K Wu IEEE International Reliability Physics Symposium, XT.3.1 - XT.3.5, 2014 | 10 | 2014 |
| Delay effects and frequency dependence of NBTI with sub-microsecond measurements YC Huang, MH Hsieh, TY Yew, W Wang, D Maji, YH Lee, WS Chou, ... IEEE International Reliability Physics Symposium, 4A.2.1 - 4A.2.5, 2015 | 9 | 2015 |
| Re-investigating the adequacy of projecting ring oscillator frequency shift from device level degradation YC Huang, TY Yew, MH Hsieh, A Misra, W Wang, YH Lee, JR Shih, K Wu IEEE International Reliability Physics Symposium, 2D.6.1 - 2D.6.5, 2014 | 7 | 2014 |
| Reliability aging and modeling of chip-package interaction on logic technologies featuring high-k metal gate planar and FinFET transistors JH Lee, ESH Chen, YH Lee, CH Lin, CY Wu, MH Hsieh, K Huang, ... IEEE International Integrated Reliability Workshop (IIRW), 2015 | 4 | 2015 |
| The impacts of inverter-like transitions on AC TDDB in a fast switching logic circuit TY Yew, YC Huang, MH Hsieh, W Wang, WS Chou, PZ Kang, YH Lee, ... IEEE International Integrated Reliability Workshop (IIRW), 47 - 50, 2014 | 4 | 2014 |
| Electrical fuse memory arrays PH Chen, CH Wang, YC Huang, SC Lin, KP Hsu US Patent 8,194,490, 2012 | 4 | 2012 |
| A novel on-die GHz AC stress test methodology for high speed IO application PZ Kang, TY Yew, KW Shih, MH Hsieh, WS Chou, CM Fu, YC Huang, ... IEEE International Reliability Physics Symposium (IRPS), 4C-3.1 - 4C-3.5, 2017 | 3 | 2017 |
| Split gate structure and method of using same YC Huang, CH Wang, TY Yu US Patent 9,335,365, 2016 | 3 | 2016 |
| Timing characterizations of device and CPU-like circuit to ensure process reliability MH Hsieh, TY Yew, YC Huang, W Wang, NH Tseng, WS Chou, YH Lee 2016 IEEE International Reliability Physics Symposium (IRPS), 4C-1-1-4C-1-5, 2016 | 2 | 2016 |
| Wafer level test arrays with simple BIST to expedite process development for circuit reliability MH Hsieh, TY Yew, YC Huang, YC Wang, W Wang, YH Lee, JH Lee 2015 IEEE International Integrated Reliability Workshop (IIRW), 77-80, 2015 | 1 | 2015 |
| AC stress and standard cell aging characterization to enhance reliability coverage of logic circuits YC Huang, LC Hsu, WS Chou, MH Hsieh, KW Shih, NH Tseng, RB Pittu, ... IEEE International Integrated Reliability Workshop (IIRW), 6-7, 2016 | | 2016 |
Neeraj K JhaQualcomm在 qti.qualcomm.com 的电子邮件经过验证
Neeraj K JhaQualcomm在 qti.qualcomm.com 的电子邮件经过验证