| A 700-V junction-isolated triple RESURF LDMOS with N-type top layer M Qiao, Y Li, X Zhou, Z Li, B Zhang IEEE Electron Device Letters 35 (7), 774-776, 2014 | 71 | 2014 |
| 300-V high-side thin-layer-SOI field pLDMOS with multiple field plates based on field implant technology M Qiao, X Zhou, Y He, H Wen, Y Zhao, B Zhang, Z Li IEEE electron device letters 33 (10), 1438-1440, 2012 | 37 | 2012 |
| Analytical modeling for a novel triple RESURF LDMOS with N-top layer M Qiao, Y Wang, X Zhou, F Jin, H Wang, Z Wang, Z Li, B Zhang IEEE Transactions on Electron Devices 62 (9), 2933-2939, 2015 | 34 | 2015 |
| Total-ionizing-dose irradiation-induced dielectric field enhancement for high-voltage SOI LDMOS X Zhou, L Shu, M Qiao, Z Lu, Y Zhao, Z Li, B Zhang IEEE Electron Device Letters 40 (4), 593-596, 2019 | 24 | 2019 |
| 250 V thin-layer SOI technology with field pLDMOS for high-voltage switching IC M Qiao, K Zhang, X Zhou, J Zou, B Zhang, Z Li IEEE Transactions on Electron Devices 62 (6), 1970-1976, 2015 | 23 | 2015 |
| Back-Gate Effect onand BV for Thin Layer SOI Field p-Channel LDMOS X Zhou, M Qiao, Y He, Z Wang, Z Li, B Zhang IEEE Transactions on Electron Devices 62 (4), 1098-1104, 2015 | 22 | 2015 |
| Novel silicon-controlled rectifier with snapback-free performance for high-voltage and robust ESD protection Z Qi, M Qiao, L Liang, F Zhang, X Zhou, S Cheng, S Zhang, F Lin, G Sun, ... IEEE Electron Device Letters 40 (3), 435-438, 2019 | 19 | 2019 |
| Numerical and experimental investigation of TID radiation effects on the breakdown voltage of 400-V SOI NLDMOSFETs L Shu, L Wang, X Zhou, CL Sui, Y Li, B Wang, YF Zhao, KF Galloway IEEE Transactions on Nuclear Science 66 (4), 710-715, 2019 | 18 | 2019 |
| Total ionizing dose effects in 30-V split-gate trench VDMOS R Wang, Z Li, M Qiao, X Zhou, T Wang, B Zhang IEEE Transactions on Nuclear Science 67 (9), 2009-2014, 2020 | 17 | 2020 |
| Investigation on total-ionizing-dose radiation response for high voltage ultra-thin layer SOI LDMOS X Zhou, L Zhang, M Qiao, P Luo, L Shu, Z Li, B Zhang 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 17 | 2018 |
| Ultralow turn-OFF loss SOI LIGBT with p-buried layer during inductive load switching Y He, M Qiao, X Zhou, Z Li, B Zhang IEEE Transactions on Electron Devices 62 (11), 3774-3780, 2015 | 17 | 2015 |
| Effect of drift length on shifts in 400-V SOI LDMOS breakdown voltage due to TID L Shu, YF Zhao, KF Galloway, L Wang, XS Wang, X Zhou, WP Chen, ... IEEE Transactions on Nuclear Science 67 (11), 2392-2395, 2020 | 12 | 2020 |
| TID-induced OFF-state leakage current in partially radiation-hardened SOI LDMOS L Shu, L Wang, K Zhao, X Zhou, YF Zhao, KF Galloway, CL Sui, CM Liu, ... IEEE Transactions on Nuclear Science 67 (6), 1133-1138, 2020 | 12 | 2020 |
| Experiments of a novel low on-resistance LDMOS with 3-D floating vertical field plate G Zhang, W Zhang, J He, X Zhu, S Zhang, J Zhao, Z Zhang, M Qiao, ... 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 12 | 2019 |
| The prevalence and risk factors for congenital hearing loss in neonates: A birth cohort study based on CHALLENGE study X Zhou, L Wang, F Jin, Y Guo, Y Zhou, X Zhang, Y Zhang, X Ni, W Li, ... International Journal of Pediatric Otorhinolaryngology 162, 111308, 2022 | 11 | 2022 |
| Suppression of hot-hole injection in high-voltage triple RESURF LDMOS with sandwich NPN layer: Toward high-performance and high-reliability M Qiao, Y Li, X Zhou, F Jin, J Yang, Y Cai, Z Li, B Zhang 2020 32nd international symposium on power semiconductor devices and ICs …, 2020 | 11 | 2020 |
| A novel 700V deep trench isolated double RESURF LDMOS with P-sink layer S Cheng, D Fang, M Qiao, S Zhang, G Zhang, Y Gu, Y He, X Zhou, Z Qi, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 11 | 2017 |
| Ultra-low specific on-resistance lateral double-diffused metal-oxide-semiconductor transistor with enhanced dual-gate and partial P-buried layer Z Wang, Z Yuan, X Zhou, M Qiao, Z Li, B Zhang Nanoscale Research Letters 14, 1-7, 2019 | 10 | 2019 |
| Uniform and linear variable doping ultra‐thin PSOI LDMOS with n‐type buried layer Y Li, M Qiao, Y Jiang, X Zhou, W Xu, B Zhang Electronics Letters 49 (22), 1407-1409, 2013 | 10 | 2013 |
| Improved model on buried-oxide damage induced by total-ionizing-dose effect for HV SOI LDMOS M Qiao, X Li, D Hou, S Zhang, X Zhou, Z Li, B Zhang IEEE Transactions on Electron Devices 68 (4), 2064-2070, 2021 | 9 | 2021 |
