| Capacitor that includes dielectric layer structure having plural metal oxides doped with different impurities K Park, J Insang, LIM HanJin, Y Lee, J Lee US Patent 8,698,221, 2014 | 349 | 2014 |
| Storage electrode of a semiconductor memory device YS Yu, SS Kim, KH Hwang, HJ Lim, SJ Choi US Patent 6,809,363, 2004 | 72 | 2004 |
| Conduction barrier offset engineering for DRAM capacitor scaling M Pešić, S Knebel, K Cho, C Jung, J Chang, H Lim, N Kolomiiets, ... Solid-State Electronics 115, 133-139, 2016 | 45 | 2016 |
| 5.6 A 1/2.65 in 44Mpixel CMOS image sensor with 0.7 µm pixels fabricated in advanced full-depth deep-trench isolation technology HC Kim, J Park, I Joe, D Kwon, JH Kim, D Cho, T Lee, C Lee, H Park, ... 2020 IEEE International Solid-State Circuits Conference-(ISSCC), 104-106, 2020 | 44 | 2020 |
| Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes M Pešić, S Knebel, M Geyer, S Schmelzer, U Böttger, N Kolomiiets, ... Journal of Applied Physics 119 (6), 2016 | 43 | 2016 |
| METHOD OF FORMING A SEMICONDUCTOR DEVICE H Lim, S Nam, J Chung, K Yoon, J Seo, J Lee, S Bae, Lim, Hanjin US Patent 20,100,112,777, 2010 | 39* | 2010 |
| Methods of manufacturing semiconductor devices having a ruthenium layer via atomic layer deposition and associated apparatus and devices KH Lee, C Yoo, H Lim, JI Lee, SJ Chung US Patent App. 10/801,208, 2004 | 37 | 2004 |
| Growth and characterization of Pb (Mg1/3Nb2/3) O3 and Pb (Mg1/3Nb2/3) O3–PbTiO3 thin films using solid source MOCVD techniques SY Lee, MCC Custodio, HJ Lim, RS Feigelson, JP Maria, ... Journal of crystal growth 226 (2-3), 247-253, 2001 | 37 | 2001 |
| 5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using … J Lee, SS Kim, IG Baek, H Shim, T Kim, T Kim, J Kyoung, D Im, J Choi, ... 2020 IEEE International Solid-State Circuits Conference-(ISSCC), 102-104, 2020 | 36 | 2020 |
| Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors KH Lee, JY Kim, SJ Chung, KH Cho, H Lim, JI Lee, K Kim, J Lim US Patent 7,271,055, 2007 | 32 | 2007 |
| Methods of fabricating semiconductor devices using nanowires H Park, DH Im, SG Lee, JM Lee, H Lim US Patent 9,543,196, 2017 | 28 | 2017 |
| Semiconductor devices including diffusion barriers with high electronegativity metals H Lim, YS Kim, H Park, SG Lee, CHO Eun-Ae, CM Cho, S Kim, SW Nam US Patent 9,455,259, 2016 | 27 | 2016 |
| Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications S Knebel, M Pešić, K Cho, J Chang, H Lim, N Kolomiiets, VV Afanas' ev, ... Journal of Applied Physics 117 (22), 2015 | 25 | 2015 |
| Low-temperature-atomic-layer-deposition of SiO2 using various organic precursors S Ahn, Y Kim, S Kang, K Im, H Lim Journal of Vacuum Science & Technology A 35 (1), 2017 | 23 | 2017 |
| Semiconductor devices having a silicon-germanium channel layer and methods of forming the same Y Kim, H An, YEO Jaehyun, IM Badro, LIM HanJin, S Jang, J Insang US Patent 9,305,928, 2016 | 22 | 2016 |
| Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors SY Lee, J Chang, Y Kim, HJ Lim, H Jeon, H Seo Applied Physics Letters 105 (20), 2014 | 22 | 2014 |
| Low temperature crystallized Ta2O5/Nb2O5 bi-layers integrated into RIR capacitor for 60 nm generation and beyond K Cho, J Lee, JS Lim, H Lim, J Lee, S Park, CY Yoo, ST Kim, UI Chung, ... Microelectronic engineering 80, 317-320, 2005 | 22 | 2005 |
| Fabrication of metal/graphene hybrid interconnects by direct graphene growth and their integration properties CS Lee, KW Shin, HJ Song, H Park, Y Cho, DH Im, H Lee, JH Lee, ... Advanced Electronic Materials 4 (6), 1700624, 2018 | 21 | 2018 |
| Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition SE Kim, JY Sung, JD Jeon, SY Jang, HM Lee, SM Moon, JG Kang, HJ Lim, ... Advanced Materials Technologies 8 (20), 2200878, 2023 | 20 | 2023 |
| Epitaxial integration and properties of SrRuO3 on silicon Z Wang, HP Nair, GC Correa, J Jeong, K Lee, ES Kim, CS Lee, HJ Lim, ... APL Materials 6 (8), 2018 | 20 | 2018 |
