| Enhanced Breakdown Voltage of AlGaN/GaN MISHEMT using GaN Buffer with Carbon-Doping on Silicon for Power Device N Islam, MFP Mohamed, SF Abd Rahman, M Syamsul, H Kawarada, ... International Journal of Nanoelectronics and Materials (IJNeaM) 17 (2), 204-210, 2024 | | 2024 |
| Influence of Al2O3 atomic-layer deposition temperature on positive-bias instability of metal/Al2O3/β-Ga2O3 capacitors A Hiraiwa, K Horikawa, H Kawarada, M Kado, K Danno Journal of Vacuum Science & Technology B 42 (1), 2024 | | 2024 |
| Influence of gate material and diamond surface termination on current conduction in metal/Al2O3/diamond capacitors S Okubo, D Matsumura, H Kawarada, A Hiraiwa Journal of Vacuum Science & Technology B 42 (1), 2024 | | 2024 |
| Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm2V-1s-1 and |VTH|> 3V Normally-off for Complementary Power Circuits H Kawarada, K Ota, Y Fu, A Narita, X Zhu, A Hiraiwa, T Fujishima 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
| Laminate, single crystal diamond substrate and method of producing same H Kawarada, W Fei, A Morishita US Patent App. 18/042,725, 2023 | | 2023 |
| Propagation of potentiometric signals based on electric conduction of sea water K Masadome, H Sato, R Nomoto, YH Chang, H Kawarada 2023 IEEE International Symposium On Antennas And Propagation (ISAP), 1-2, 2023 | | 2023 |
| Oxidized-silicon-terminated Diamond p-FETs with SiO2-fiNing Shallow Trench Isolation Structures Y Fu, T Bi, Y Chang, R Xu, Y Xu, H Kawarada IEEE Electron Device Letters, 2023 | | 2023 |
| Normally-off operation in vertical diamond MOSFETs using an oxidized Si-terminated diamond channel K Ota, Y Fu, K Narita, C Wakabayashi, A Hiraiwa, T Fujishima, ... Carbon 213, 118099, 2023 | 1 | 2023 |
| Enhancing photon collection from single shallow nitrogen-vacancy centers in diamond nanopillars for quantum heterodyne measurements A Chanuntranont, K Otani, D Saito, Y Ueda, M Tsugawa, S Usui, Y Miyake, ... Applied Physics Express 16 (8), 082006, 2023 | 1 | 2023 |
| Analysis Of The Reliability Of Passivation Layer And Interface Charge On Breakdown Voltage of E-Mode AlGaN/GaN MISHEMTs Device N Islam, MFP Mohamed, FAJ Khan, S Falina, H Kawarada, M Syamsul, ... 2023 IEEE International Symposium on the Physical and Failure Analysis of …, 2023 | | 2023 |
| Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT MHA Hamid, RI Mohd Asri, M Nuzaihan, M Inaba, Z Hassan, H Kawarada, ... Key Engineering Materials 947, 3-8, 2023 | | 2023 |
| Comparison of the Electrical Performance of AlN and HfO2 Passivation Layer in AlGaN/GaN HEMT Z Zulkifli, N Ali, S Falina, H Kawarada, MF Packeer Mohamed, M Syamsul Key Engineering Materials 947, 21-26, 2023 | 1 | 2023 |
| Nanomanipulation of Functionalized Gold Nanoparticles on GaN MA Che Seliman, NA Ali Yusup, MA Ahmad, C Ibau, M Nuzaihan, ... Key Engineering Materials 947, 9-14, 2023 | | 2023 |
| Impact of Notch Structures on Transfer Characteristics of AlGaN/GaN HEMTs: A Simulation Study M Haziq, N Ali, S Falina, H Kawarada, M Syamsul Key Engineering Materials 947, 15-20, 2023 | | 2023 |
| Band alignment and quality of Al0. 6Ga0. 4N/AlN films grown on diamond (111) substrate by remote N-plasma assisted MBE S Kono, K Shima, SF Chichibu, M Shimomura, T Kageura, H Kawarada Diamond and Related Materials 136, 110013, 2023 | 1 | 2023 |
| Detecting nuclear spins in an organosilane monolayer using nitrogen-vacancy centers for analysis of precursor self-assembly on diamond surface Y Ueda, Y Miyake, A Chanuntranont, K Otani, M Tsugawa, D Saito, S Usui, ... Japanese journal of applied physics 62 (SG), SG1049, 2023 | | 2023 |
| Diamond field effect transistor and method for producing same H Kawarada, W Fei, T Bi, M Iwataki US Patent App. 17/910,325, 2023 | | 2023 |
| Effects of Surface Contaminants on Bonding Strength for Direct Cu-Cu Bonding With Passivation Layer AYK Pétillot, S Shoji, H Kawarada, J Mizuno 2023 International Conference on Electronics Packaging (ICEP), 31-32, 2023 | | 2023 |
| High-density NV Ensemble with Mutual Interaction of NV Centers Created in Ultra Heavily Nitrogen-doped CVD Diamond K Hayasaka, K Kanehisa, M Ueda, K Kimura, T Tanii, S Onoda, ... | | 2023 |
| Ion Sensitive Stainless Steel Vessel for All-solid-state pH Sensing System Incorporating pH Insensitive Diamond Solution Gate Field-effect Transistors YH Chang, Y Iyama, S Kawaguchi, T Takarada, H Sato, R Nomoto, ... IEEE Sensors Journal, 2023 | | 2023 |
