| MEMBRES DU JURY M Darnon, G Hamon, R Arés, J Chapon, J Choisnard | | 2024 |
| Method and system for manufacturing an optoelectronic device and optoelectronic device manufactured using same MR Aziziyan, I Arvinte, A Boucherif, A Richard US Patent App. 18/264,975, 2024 | | 2024 |
| Anisotropic porous germanium nanostructures achieved with fast bipolar electrochemical etching and chemical etching A Dupuy, A Boucherif, R Ares US Patent 11,901,564, 2024 | | 2024 |
| Substrates for optoelectronic devices and methods of manufacturing same YA Bioud, A Boucherif, A Richard US Patent App. 18/041,554, 2024 | | 2024 |
| Thermal strain relaxation of GaAs overgrown on nanovoid based Ge/Si substrate J Henriques, B Ilahi, A Heintz, D Morris, R Arès, A Boucherif Journal of Crystal Growth 624, 127433, 2023 | 1 | 2023 |
| Experimental demonstration of the strong impact of plasma excitation frequency range on electronic properties of silicon nitride/GaAs interfaces O Richard, H Mziouek, R Arès, V Aimez, A Jaouad Surfaces and Interfaces 40, 103104, 2023 | 3 | 2023 |
| Wafer-scale detachable monocrystalline germanium nanomembranes for the growth of III–V materials and substrate reuse N Paupy, ZO Elhmaidi, A Chapotot, T Hanuš, J Arias-Zapata, B Ilahi, ... Nanoscale Advances 5 (18), 4696-4702, 2023 | 13 | 2023 |
| Defect free strain relaxation of microcrystals on mesoporous patterned silicon A Heintz, B Ilahi, A Pofelski, G Botton, G Patriarche, A Barzaghi, S Fafard, ... Nature Communications 13 (1), 6624, 2022 | 14 | 2022 |
| Unfolding the role of defect engineering in graphene during Van der Waals epitaxy of semiconductors T Hanuš, TM Diallo, A Ruediger, G Patriarche, S Fafard, R Arès, ... European Material Research Society (EMRS), 2022 | | 2022 |
| Viability of a hybrid desalinisation system using concentrated photovoltaics receivers to power seawater desalination M Omri, Y Al-Turki, R Norman, R Arès, L Fréchette Alexandria Engineering Journal 61 (7), 5667-5675, 2022 | 2 | 2022 |
| Growth of GaAs on Ge/Si (001) nanovoided virtual substrate J Henriques, A Heintz, B Ilahi, R Arès, A Boucherif 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), 0550-0550, 2022 | | 2022 |
| Epitaxial growth of detachable GaAs/Ge heterostructure on mesoporous Ge substrate for layer separation and substrate reuse N Paupy, B Ilahi, ZO Elhmaidi, V Daniel, T Hanuš, R Arvinte, A Heintz, ... 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), 0430-0430, 2022 | 4 | 2022 |
| In‐Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der Waals Epitaxy TM Diallo, MR Aziziyan, R Arvinte, JC Harmand, G Patriarche, C Renard, ... Small 18 (5), 2101890, 2022 | 7 | 2022 |
| Ultra-Low Dislocation Ge on Silicon Virtual Substrate: New Insights from Crystal Plasticity Simulations MH Hamza, YA Bioud, A Boucherif, R Arès, S Bedair, TM Hatem Available at SSRN 4079238, 2022 | 1 | 2022 |
| On the Test Particle Monte-Carlo method to solve the steady state Boltzmann equation, the congruity of its results with experiments and its potential for shared memory parallelism M Rondeau, R Arès Journal of Computational Physics 444, 110590, 2021 | 3 | 2021 |
| High power normally-OFF GaN/AlGaN HEMT with regrown p type GaN G Rolland, C Rodriguez, G Gommé, A Boucherif, A Chakroun, ... Energies 14 (19), 6098, 2021 | 6 | 2021 |
| Ultrafast photocarrier dynamics in Fe-implanted InGaAs polycrystalline photoconductive materials DJJ Fandio, B Ilahi, M Dion, B Petrov, H Pelletier, R Arès, D Morris Journal of Physics: Condensed Matter 33 (38), 385701, 2021 | 2 | 2021 |
| Effect of voided germanium thin-films grown onto silicon substrate on dislocations evolution MH Hamza, YA Bioud, A Boucherif, R Arès, TM Hatem 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 0602-0604, 2021 | | 2021 |
| Anisotropic mesoporous germanium nanostructures by fast bipolar electrochemical etching A Dupuy, MR Aziziyan, D Machon, R Arès, A Boucherif Electrochimica Acta 378, 137935, 2021 | 19 | 2021 |
| CVD growth of high-quality graphene over Ge (100) by annihilation of thermal pits TM Diallo, MR Aziziyan, R Arvinte, R Arès, S Fafard, A Boucherif Carbon 174, 214-226, 2021 | 10 | 2021 |
Vincent AimezProfesseur, Université de Sherbrooke在 USherbrooke.ca 的电子邮件经过验证
