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Thomas Hantschel
Thomas Hantschel
在 imec.be 的电子邮件经过验证
标题
引用次数
年份
Enabling focused ion beam sample preparation for application in reverse tip sample scanning probe microscopy
P Lagrain, K Paulussen, E Grieten, G Van den Bosch, S Rachidi, ...
Micro and Nano Engineering 23, 100247, 2024
2024
Method for Producing a Substrate Comprising Multiple Tips for Scanning Probe Microscopy
T Hantschel, XM Xu
US Patent App. 18/524,772, 2024
2024
Probe chip nanofabrication enabled reverse tip sample scanning probe microscopy concept and measurements
HS Kim, N Peric, A Minj, L Wouters, J Serron, C Mancini, S Koylan, ...
Nanotechnology 35 (26), 265703, 2024
2024
Wafer configured to recondition a support surface of a wafer holding stage
T Hantschel
US Patent 11,955,368, 2024
2024
Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements
A Minj, V Mootheri, S Banerjee, A Nalin Mehta, J Serron, T Hantschel, ...
ACS nano 18 (15), 10653-10666, 2024
2024
Design, Fabrication and Evaluation of Diamond Tip Chips for Reverse Tip Sample Scanning Probe Microscope Applications
S Gim, T Hantschel, JH Kim
Korean Journal of Materials Research 34 (2), 105-110, 2024
2024
An Innovative Multi-Probe Tomographic Atomic Force Microscope for Materials Research and Failure Analysis
D Sharma, M Tedaldi, P Hole, ADL Humphris, L Wouters, T Hantschel, ...
EDFA Technical Articles 25 (4), 20-26, 2023
12023
Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS2 monolayers on sapphire substrates
Y Rybalchenko, A Minj, H Medina, R Villarreal, B Groven, D Lin, ...
Solid-State Electronics 209, 108781, 2023
12023
Self-patterned ultra-sharp diamond tips and their application for advanced nanoelectronics device characterization by electrical SPM
L Wouters, T Boehme, L Mana, T Hantschel
Micro and Nano Engineering 19, 100195, 2023
22023
Conductivity enhancement in transition metal dichalcogenides: a complex water intercalation and desorption mechanism
J Serron, A Minj, V Spampinato, A Franquet, Y Rybalchenko, ME Boulon, ...
ACS Applied Materials & Interfaces 15 (21), 26175-26189, 2023
42023
Offcut angle determination using electron channeling patterns
H Han, L Strakos, T Hantschel, T Vystavel, C Porret
US Patent 11,650,171, 2023
12023
Correlating Structural and Electrical Characteristics of Threading Dislocations in -on- Heterostructures and p-n Diodes by Multiple Microscopy Techniques
A Minj, K Geens, H Liang, H Han, C Noël, B Bakeroot, K Paredis, M Zhao, ...
Physical Review Applied 19 (3), 034081, 2023
2023
Correlated Intrinsic Electrical and Chemical Properties of Epitaxial WS2 via Combined C‐AFM and ToF‐SIMS Characterization
V Spampinato, Y Shi, J Serron, A Minj, B Groven, T Hantschel, ...
Advanced Materials Interfaces 10 (7), 2202016, 2023
22023
Ensemble RBS: Probing the compositional profile of 3D microscale structures
N Claessens, P Couture, J England, R Vos, T Hantschel, W Vandervorst, ...
Surfaces and interfaces 32, 102101, 2022
52022
Oil as an enabler for efficient materials removal in three-dimensional scanning probe microscopy applications
C Noël, L Wouters, K Paredis, U Celano, T Hantschel
Frontiers in Mechanical Engineering 7, 797962, 2021
22021
Crystalline defect analysis in epitaxial Si0. 7Ge0. 3 layer using site-specific ECCI-STEM
H Han, L Strakos, T Hantschel, C Porret, T Vystavel, R Loo, M Caymax
Micron 150, 103123, 2021
42021
Application and optimization of automated ECCI mapping to the analysis of lowly defective epitaxial films on blanket or patterned wafers
H Han, T Hantschel, P Lagrain, C Porret, R Loo, M Baryshnikova, ...
International Symposium for Testing and Failure Analysis 84215, 211-216, 2021
22021
Improving tomographic sensing of Scalpel SPM with multi-probe functionality and automatic removal rate extraction
C O’Sullivan, M Tedaldi, C Drilakis, T Hantschel, ADL Humphris, JP Hole, ...
2021 IEEE International Symposium on the Physical and Failure Analysis of …, 2021
12021
Method and tip substrate for scanning probe microscopy
T Hantschel, H Bender, K Paredis, A Kanniainen
US Patent 11,112,427, 2021
2021
Interfacial conductivity enhancement and pore confinement conductivity-lowering behavior inside the nanopores of solid silica-gel nanocomposite electrolytes
A Sagara, H Yabe, X Chen, B Put, T Hantschel, M Mees, H Arase, ...
ACS Applied Materials & Interfaces 13 (34), 40543-40551, 2021
152021
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