| Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy P Fiorenza, M Zignale, E Zanetti, MS Alessandrino, B Carbone, ... arXiv preprint arXiv:2407.13370, 2024 | | 2024 |
| Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire SE Panasci, E Schilirò, A Koos, F Roccaforte, M Cannas, S Agnello, ... Applied Physics Letters 124 (24), 2024 | | 2024 |
| Formation of Ti ohmic contact on p-SiC by laser annealing G Bellocchi, R Vabres, M Vivona, P Badalà, V Puglisi, P Mancuso, ... | 1 | 2024 |
| Thermal-Induced Defects in Monolayer MoS₂ Flakes A Madonia, E Sangiorgi, G Laurella, S Panasci, E Schilirò, F Giannazzo, ... | | 2024 |
| Thermal Stability of Monolayer MoS2 Flakes under Controlled Atmosphere A Madonia, E Sangiorgi, G Laurella, S Panasci, E Schilirò, F Giannazzo, ... | | 2024 |
| Strain-doping tailoring of MoS2 on Au substrate under controlled environment conditions E Sangiorgi, A Madonia, G Laurella, SE Panasci, E Schilirò, F Giannazzo, ... | | 2024 |
| Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices F Giannazzo, SE Panasci, E Schilirò, A Koos, B Pécz Materials Science in Semiconductor Processing 174, 108220, 2024 | 5 | 2024 |
| Schottky contacts on sulfurized silicon carbide (4H-SiC) surface F Roccaforte, M Vivona, SE Panasci, G Greco, P Fiorenza, A Sulyok, ... Applied Physics Letters 124 (10), 2024 | | 2024 |
| Interface Properties of MoS2 van der Waals Heterojunctions with GaN SE Panasci, I Deretzis, E Schilirò, A La Magna, F Roccaforte, A Koos, ... Nanomaterials 14 (2), 133, 2024 | 2 | 2024 |
| Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) B Galizia, P Fiorenza, C Bongiorno, B Pécz, Z Fogarassy, E Schilirò, ... Microelectronic Engineering 283, 112103, 2024 | 3 | 2024 |
| Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps P Fiorenza, M Zignale, M Camalleri, L Scalia, E Zanetti, M Saggio, ... Materials Science in Semiconductor Processing 169, 107866, 2024 | 2 | 2024 |
| Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition F Esposito, M Bosi, G Attolini, F Rossi, SE Panasci, P Fiorenza, ... Applied Surface Science 639, 158230, 2023 | 3 | 2023 |
| Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition M Španková, Š Chromik, E Dobročka, L Pribusová Slušná, M Talacko, ... Nanomaterials 13 (21), 2837, 2023 | 2 | 2023 |
| On the Possibility of Realizing a 2D Structure of Si─ N Bonds by Metal‐Organic Chemical Vapor Deposition B Pécz, M Nemeth, F Giannazzo, A Kakanakova-Georgieva physica status solidi (b) 260 (10), 2300262, 2023 | 1 | 2023 |
| Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN F Giannazzo, SE Panasci, E Schilirò, G Greco, F Roccaforte, G Sfuncia, ... Applied Surface Science 631, 157513, 2023 | 14 | 2023 |
| Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 E Schilirò, SE Panasci, AM Mio, G Nicotra, S Agnello, B Pecz, ... Applied Surface Science 630, 157476, 2023 | 13 | 2023 |
| Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices E Schilirò, P Fiorenza, R Lo Nigro, B Galizia, G Greco, S Di Franco, ... Materials 16 (16), 5638, 2023 | 2 | 2023 |
| Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults M Vivona, P Fiorenza, V Scuderi, F La Via, F Giannazzo, F Roccaforte Applied Physics Letters 123 (7), 2023 | 3 | 2023 |
| Enhancement-mode hemt and manufacturing process of the same F Iucolano, F Giannazzo, G Greco, F Roccaforte US Patent App. 18/158,986, 2023 | 1 | 2023 |
| Evolution of Interface State Density and Near Interface Oxide Traps under Controlled Nitric Oxide Annealing in SiO2/SiC Lateral MOSFETs P Fiorenza, M Camalleri, L Scalia, E Zanetti, M Saggio, F Giannazzo, ... Materials Science Forum 1090, 113-117, 2023 | | 2023 |
Fabrizio RoccaforteConsiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi在 imm.cnr.it 的电子邮件经过验证
