| 12-01 Etch of Yb-Doped Poly Gates to Achieve Low-Vt Ni-FUSI CMOS M Demand, V Paraschiv, D Shamiryan, A Veloso, C Vrancken, S Brus, ... PROCEEDINGS OF INTERNATIONAL SYMPOSIUM ON DRY PROCESS, 289, 0 | | |
| 13: 30 11A-1 25% Drive Current Improvement for p-type Multiple Gate FET (MuGFET) Devices by the Introduction of Recessed Si~ 0~.~ 8Ge~ 0~.~ 2 in the Source and Drain Regions P Verheyen, N Collaert, R Rooyackers, R Loo, D Shamiryan, ... SYMPOSIUM ON VLSI TECHNOLOGY 2005, 194, 2005 | | 2005 |
| 25% drive current improvement for p-type multiple gate FET (MuGFET) devices by the introduction of recessed Si/sub 0.8/Ge/sub 0.2/in the source and drain regions P Verheyen, N Collaert, R Rooyackers, R Loo, D Shamiryan, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 194-195, 2005 | 66 | 2005 |
| 8Å Tinvgate-first dual channel technology achieving low-Vthigh performance CMOS L Witters, S Takeoka, S Yamaguchi, A Hikavyy, D Shamiryan, M Cho, ... 2010 Symposium on VLSI Technology, 181-182, 2010 | 34 | 2010 |
| A discussion of the practical importance of positron annihilation lifetime spectroscopy percolation threshold in evaluation of porous low-K dielectrics KP Mogilnikov, MR Baklanov, D Shamiryan, MP Petkov Japanese journal of applied physics 43 (1R), 247, 2004 | 29 | 2004 |
| A plasma etch process for bulk finFET manufacturing D Shamiryan, A Redolfi, W Boullart | | 2007 |
| Advanced Metallization Conference (AMC) F Iacopi, Z Tökei, D Shamiryan, QT Le, S Malhouitre, M Van Hove, K Maex, ... Evaluation 61, 66, 2001 | 1 | 2001 |
| ADVANCED METALLIZATION CONFERENCE (AMC) KC Tee, K Prasad, CS Lee, H Gong, L Chan, AK See, CL Cha, ... | | 2000 |
| Alternative gate dielectric materials S Van Elshocht, A Hardy, S De Gendt, C Adelmann, PK Baumann, ... ECS Transactions 3 (3), 479, 2006 | 3 | 2006 |
| Applied Physics Focused Review K Maex, MR Baklanov, D Shamiryan, F Iacopi, S Brongersma, ... J. Appl. Phys 93 (11), 8793-8841, 2003 | 5 | 2003 |
| Atomic layer deposited barriers for copper interconnects J Schuhmacher, A Martin Hoyas, D Ernur, Z Tokei, Y Travaly, ... | | 2004 |
| Barrier deposition on porous low-k films D Shamiryan, ZS Yanovitskaya, F Iacopi, K Maex | 3 | 2003 |
| BCl3/N2 Plasma for Advanced non-Si Gate Patterning D Shamiryan, V Paraschiv, S Eslava-Fernandez, M Demand, M Baklanov, ... MRS Online Proceedings Library (OPL) 913, 0913-D03-12, 2006 | | 2006 |
| Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques A Redolfi, E Sleeckx, K Devriendt, D Shamiryan, T Vandeweyer, ... Ulis 2011 Ultimate Integration on Silicon, 1-3, 2011 | 17 | 2011 |
| Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques A Redolfi, S Kubicek, R Rooyackers, MS Kim, E Sleeckx, K Devriendt, ... Solid-state electronics 71, 106-112, 2012 | 16 | 2012 |
| C2H4-Based Plasma-Assisted CD Shrink and Contact Patterning for RRAM Application A Milenin, J Lisoni, N Jossart, M Jurczak, H Struyf, D Shamiryan, M Brouri, ... MRS Online Proceedings Library (OPL) 1249, 1249-F04-09, 2010 | 1 | 2010 |
| Characterisation of ALD diffusion barrier on Low-k dielectric polymer AM Hoyas, J Schuhmacher, D Shamiryan, JP Celis, K Maex Workshop'Trends in Applied Surface Science', Date: 2002/05/23-2002/05/24 …, 2002 | | 2002 |
| Characterisation of Cu surface cleaning by downstream N2/H2 plasma M Baklanov, D Shamiryan, G Beyer, T Conard, S Vanhaelemeersch, ... | 3 | 2001 |
| Characteristics of selective epitaxial SiGe deposition processes for recessed source/drain applications R Loo, P Verheyen, G Eneman, R Rooyackers, F Leys, D Shamiryan, ... Thin solid films 508 (1-2), 266-269, 2006 | 17 | 2006 |
| Characterization of Cu surface cleaning by hydrogen plasma MR Baklanov, DG Shamiryan, Z Tökei, GP Beyer, T Conard, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 117 | 2001 |
Dr. Adam M. UrbanowiczApplication Tech Leader - Material Expert, NOVA在 novameasuring.com 的电子邮件经过验证
